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TIED458

Texas Instruments

TIED458 by Texas Instruments

TIED458 by Texas Instruments is a phototransistor with peak wavelength of 820nm, max temp of 85°C, and response time of 0.00000001s. Ideal for applications requiring precise light detection in environments ranging from -40°C to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,779 parts In-Stock

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Digiode

USA . 1,038 parts In-Stock

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Parana Technologies

USA . 1,723 parts In-Stock

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$0.289

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$1.541

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1,723

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$1.541

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ChromeModa Solutions

Germany . 3,945 parts In-Stock

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$0.325

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$0.266

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IDEA Electronic Components Group

UK . 594 parts In-Stock

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$0.325

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$0.292

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Semicontronic

India . 760 parts In-Stock

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$3.100

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$3.022

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$3.007

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760

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Ampacity Inc.

Singapore . 371 parts In-Stock

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$8.100

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$8.100

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AZTECH Wire

Italy . 405 parts In-Stock

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$8.601

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One Stop Electronics

USA . 259 parts In-Stock

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DigiPath Technology Company

USA . 2,363 parts In-Stock

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$0.293

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Corphita

USA . 895 parts In-Stock

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Corohmni

South Africa . 479 parts In-Stock

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Overview

Elevate your projects with the TIED458 phototransistor from Texas Instruments, a trusted manufacturer known for quality and reliability. Perfect for applications requiring precise light detection, this phototransistor offers unparalleled performance with a peak wavelength of 820 nm and a rapid response time. With a wide operating temperature range and low power dissipation, the TIED458 delivers exceptional value and benefits to customers seeking efficiency and accuracy in their designs. Upgrade your devices today with the TIED458 and experience the difference that superior technology can make.

Feature Benefit Bullets

Peak Wavelength: 820 nm

The peak wavelength of 820nm makes this phototransistor suitable for applications requiring sensitivity to light in the near-infrared spectrum.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this phototransistor can withstand high temperature environments without compromising performance.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40°C allows this phototransistor to function effectively in cold environments.

Maximum Power Dissipation: 0.1 W

With a maximum power dissipation of 0.1W, this phototransistor can handle high power levels without overheating.

Maximum Dark Current: 40 nA

The low maximum dark current of 40nA ensures minimal noise when the phototransistor is not exposed to light, resulting in accurate detection of light levels.

Maximum Response Time: 0.00000001 s

The extremely fast maximum response time of 0.00000001 seconds allows this phototransistor to quickly react to changes in light intensity, making it suitable for high-speed applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes it easy to securely mount this phototransistor on a circuit board, ensuring reliable performance in various applications.

Maximum On State Current: 0.0001 A

With a maximum on-state current of 0.0001A, this phototransistor can handle high current levels when exposed to light, making it suitable for applications requiring a high level of sensitivity.

Technical Specifications

Phototransistors TIED458 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

40 nA

Mounting Feature:

Maximum On State Current:

.0001 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Peak Wavelength (nm):

820

Maximum Power Dissipation:

.1 W

Maximum Response Time:

.00000001 s

Sub-Category:

Photo Transistors

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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