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PH101

Renesas Electronics

PH101 by Renesas Electronics

PHOTO DARLINGTON; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 20 V; Additional Features: HIGH SENSITIVITY; Peak Wavelength (nm): 850;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 1 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.861

100+ parts

$0.852

1k+ parts

$0.818

10k+ parts

-

500

$0.861

$0.852

$0.818

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Kepictronics

USA . 58,951 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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58,951

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,000

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Technical Specifications

Phototransistors PH101 attributes and parameters. Explore more Phototransistors devices from Renesas Electronics

Specs

Additional Features:

HIGH SENSITIVITY

Minimum Collector-emitter Breakdown Voltage:

20 V

Configuration:

SINGLE

Maximum Dark Current:

500 nA

JESD-609 Code:

e0

Nominal Light Current:

12 mA

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.05 A

Maximum Operating Temperature:

85 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Maximum Power Dissipation:

.1 W

Shape:

ROUND

Size:

3.8 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Trade Compliance

PH101 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

NSN

4940-01-587-8902, 4940015878902, 5905-00-061-2003, 5905000612003

NIIN

015878902, 000612003

Manufacturer Highlights

Renesas Electronics

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