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TEPT5600

Vishay Intertechnology

TEPT5600 by Vishay Intertechnology

TEPT5600 by Vishay Intertechnology is a 5mm round phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, has a collector-emitter breakdown voltage of 6V, and can handle max on state current of 0.02A. Ideal for optoelectronic applications requiring precise light detection in various environments.

Median Price

$0.598

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Chip1Stop

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Farnell

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Newark

USA . 1,622 parts In-Stock

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Mouser Electronics

USA . 10,137 parts In-Stock

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DigiKey

USA . 8,894 parts In-Stock

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RS Americas

USA . 1,811 parts In-Stock

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Element14

Singapore . 2,675 parts In-Stock

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$0.759

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Distrelec

Netherlands . 3,287 parts In-Stock

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$0.981

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$0.654

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RS (Exports)

UK . 3,977 parts In-Stock

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$1.090

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Verical

USA . 5,522 parts In-Stock

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TTI

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Future Electronics

Canada . 2,822 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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TME

Poland . 5,522 parts In-Stock

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Chip Stock

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Cogito LLC

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Partservice

France . 3,990 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 3,990 parts In-Stock

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$0.364

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Vyrian

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IBS Electronics

USA . 2,822 parts In-Stock

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Rapid Electronics

USA . 2,550 parts In-Stock

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Bristol Electronics

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Holdelec - ElecDif-Pro

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Semicontronic

India . 3,877 parts In-Stock

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Ampacity Inc.

Singapore . 3,836 parts In-Stock

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Bastille Electronics

Australia . 550 parts In-Stock

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Continental Prestige Electronics

USA . 5,340 parts In-Stock

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Argo Parts USA

USA . 177 parts In-Stock

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Corohmni

South Africa . 59 parts In-Stock

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Aztec Data Supply Inc.

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Component Stockers USA

USA . 45,936 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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Formix International (Excess)

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Overview

Experience unmatched quality and reliability with the TEPT5600 phototransistor from Vishay Intertechnology. Designed for a wide range of applications, this 5mm round phototransistor offers exceptional performance in detecting light with a peak wavelength of 570nm. With a maximum power dissipation of 0.1W and a nominal light current of 0.35mA, this through-hole mount device provides superior sensitivity and accuracy. Trust Vishay Intertechnology for cutting-edge optoelectronic solutions that deliver unparalleled value and benefits to your projects.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to use and integrate in different applications.

Size: 5 mm

Compact size allows for easy placement and installation in various devices.

Peak Wavelength (nm): 570

Peak wavelength of 570 nm ensures efficient light detection in the green spectrum.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor type offers high sensitivity and reliability for light sensing applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature makes it suitable for a wide range of environments.

Shape: ROUND

Round shape allows for easy integration and placement within devices.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality in cold environments.

Terminal Finish: TIN

Tin terminal finish provides good solderability and conductivity for easy installation.

Maximum Power Dissipation: 0.1 W

High maximum power dissipation allows for reliable operation under varying light conditions.

Nominal Light Current: 0.35 mA

Nominal light current of 0.35 mA ensures accurate light sensing capabilities.

Maximum Dark Current: 50 nA

Low maximum dark current ensures minimal noise in low light situations.

Minimum Collector-emitter Breakdown Voltage: 6 V

Minimum collector-emitter breakdown voltage of 6 V provides protection against voltage spikes.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature allows for secure and stable placement on PCBs.

Maximum On State Current: 0.02 A

High maximum on state current ensures reliable operation under varying light conditions.

Technical Specifications

Phototransistors TEPT5600 attributes and parameters. Explore more Phototransistors devices from Vishay Intertechnology

Specs

Additional Features:

HIGH SENSITIVITY

Minimum Collector-emitter Breakdown Voltage:

6 V

Configuration:

SINGLE

Maximum Dark Current:

50 nA

Infrared (IR) Range:

NO

JESD-609 Code:

e3

Nominal Light Current:

.35 mA

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.02 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

570

Maximum Power Dissipation:

.1 W

Shape:

ROUND

Size:

5 mm

Sub-Category:

Photo Transistors

Terminal Finish:

TIN

Trade Compliance

TEPT5600 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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