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TIL609

Texas Instruments

TIL609 by Texas Instruments

TIL609 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for applications requiring precise light detection in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,430 parts In-Stock

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Digiode

USA . 1,025 parts In-Stock

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1,025

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Distributors (Availability)

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Parana Technologies

USA . 1,487 parts In-Stock

1+ parts

$0.079

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$1.446

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1,487

$0.079

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$1.446

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DigiPath Technology Company

USA . 989 parts In-Stock

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$0.087

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989

$0.087

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ChromeModa Solutions

Germany . 5,052 parts In-Stock

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$0.089

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$0.073

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5,052

$0.089

$0.073

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IDEA Electronic Components Group

UK . 1,439 parts In-Stock

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$0.089

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$0.080

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1,439

$0.089

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$0.080

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One Stop Electronics

USA . 518 parts In-Stock

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$5.100

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518

$5.100

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Ampacity Inc.

Singapore . 1,243 parts In-Stock

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$10.100

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$10.100

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AZTECH Wire

Italy . 363 parts In-Stock

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$14.410

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363

$14.410

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Semicontronic

India . 1,303 parts In-Stock

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$18.100

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$17.648

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$17.557

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$17.557

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Corphita

USA . 3,747 parts In-Stock

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Corohmni

South Africa . 315 parts In-Stock

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Overview

Unleash the power of light sensing with the TIL609 by Texas Instruments, a top-tier manufacturer in the industry. This phototransistor boasts a peak wavelength of 900nm and a wide operating temperature range from -60°C to 125°C, making it perfect for various applications. Whether it's automotive, industrial, or consumer electronics, the TIL609 delivers exceptional performance and reliability. Experience unparalleled value and quality with this cutting-edge component that will elevate your projects to new heights. Trust Texas Instruments for superior products that exceed expectations.

Feature Benefit Bullets

Peak Wavelength: 900 nm

The peak wavelength of 900nm allows for efficient detection of light at specific frequencies, making this product suitable for applications requiring precise light sensing.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this phototransistor can withstand elevated temperatures without sacrificing performance, making it versatile for various environments.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C ensures reliable performance even in cold conditions, providing flexibility for use in a wide range of temperature settings.

Maximum Power Dissipation: 0.05 W

The low power dissipation of 0.05W ensures energy efficiency and helps prevent overheating, making this phototransistor a cost-effective and reliable choice for long-term use.

Maximum Dark Current: 25 nA

With a low maximum dark current of 25nA, this product offers accurate light detection by minimizing background noise, ensuring precise and reliable sensing capabilities.

Maximum Response Time: 0.000008 s

The ultra-fast maximum response time of 0.000008 seconds enables quick detection and response to changes in light intensity, making this phototransistor ideal for high-speed applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies installation and ensures secure placement, making it easier to integrate this phototransistor into various electronic devices and systems.

Technical Specifications

Phototransistors TIL609 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

25 nA

Mounting Feature:

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Sub-Category:

Photo Transistors

Trade Compliance

TIL609 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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