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TIL611

Texas Instruments

TIL611 by Texas Instruments

TIL611 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s, it's ideal for applications requiring precise light detection in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,560 parts In-Stock

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Digiode

USA . 3,105 parts In-Stock

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3,105

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Distributors (Availability)

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Parana Technologies

USA . 1,045 parts In-Stock

1+ parts

$0.092

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-

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$1.453

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1,045

$0.092

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$1.453

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DigiPath Technology Company

USA . 883 parts In-Stock

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$0.101

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$0.093

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883

$0.101

$0.093

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ChromeModa Solutions

Germany . 5,168 parts In-Stock

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$0.103

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$0.084

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$0.103

$0.084

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IDEA Electronic Components Group

UK . 1,027 parts In-Stock

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$0.103

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$0.093

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1,027

$0.103

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Ampacity Inc.

Singapore . 883 parts In-Stock

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$3.100

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883

$3.100

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Semicontronic

India . 648 parts In-Stock

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$9.100

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$8.872

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$8.827

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648

$9.100

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AZTECH Wire

Italy . 403 parts In-Stock

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$17.255

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One Stop Electronics

USA . 1,394 parts In-Stock

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$18.100

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Corphita

USA . 2,405 parts In-Stock

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Corohmni

South Africa . 94 parts In-Stock

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Assy Fe

Spain . 25 parts In-Stock

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Overview

Illuminate your projects with the TIL611 phototransistor by Texas Instruments. With a peak wavelength of 900nm, this high-quality component offers reliable performance in a wide temperature range from -60°C to 125°C. Whether you're designing light sensors, optical switches, or industrial controls, the TIL611 delivers exceptional sensitivity and response time. Trust in Texas Instruments' reputation for excellence and choose the TIL611 for your next application.

Feature Benefit Bullets

Peak Wavelength: 900 nm

This phototransistor is optimized for detecting light at a specific wavelength, ensuring accurate and reliable performance in applications that require sensitivity to light at 900 nm.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this phototransistor can withstand elevated temperatures, making it suitable for use in industrial or harsh environments where heat may be a concern.

Minimum Operating Temperature: -60 °C

The wide range of minimum operating temperature allows this phototransistor to be used in a variety of environments, including cold temperatures, without compromising its performance.

Maximum Power Dissipation: 0.05 W

This low power dissipation ensures energy efficiency and prevents the phototransistor from overheating, contributing to its longevity and reliability in operation.

Maximum Dark Current: 25 nA

The low dark current of this phototransistor reduces noise and improves the signal-to-noise ratio, making it ideal for applications that require high sensitivity to light with minimal interference.

Maximum Response Time: 0.000008 s

With an incredibly fast response time, this phototransistor can quickly detect changes in light intensity, making it suitable for high-speed applications where rapid feedback is crucial.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies installation and ensures secure attachment, making this phototransistor easy to integrate into various electronic systems and circuits.

Technical Specifications

Phototransistors TIL611 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

25 nA

Mounting Feature:

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Sub-Category:

Photo Transistors

Trade Compliance

TIL611 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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