Loading...

SPS203C

Onsemi

SPS203C by Onsemi

SPS203C by Onsemi is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It operates b/w -25 °C to 100°C, dissipating max power of 0.05W. With response time of 0.00003s and max on state current of 0.05A, it's ideal for through hole mounting in various optoelectronic applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,371 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,371

-

-

-

-

Digiode

USA . 419 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

419

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 8,185 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,185

-

-

-

-

Problanco Electronics

Mexico . 6,168 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,168

-

-

-

-

SupplyDigital Components

Austria . 5,073 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,073

-

-

-

-

Corphita

USA . 1,438 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,438

-

-

-

-

TANS Electronics

Latvia . 1,124 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,124

-

-

-

-

Corohmni

South Africa . 426 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

426

-

-

-

-

UHIMA Technologies

Türkiye . 211 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

211

-

-

-

-

Overview

Enhance your optical sensing applications with the SPS203C by Onsemi. As a leading manufacturer of phototransistors, Onsemi delivers top-notch quality and reliability in every product. The SPS203C offers peak performance at a wavelength of 850nm, making it ideal for a wide range of optoelectronic applications. With a maximum operating temperature of 100 °C and a minimum of -25°C, this phototransistor is designed to withstand varying environmental conditions. Experience the value and benefits of this high-performance device, with its quick response time and low power dissipation, the SPS203C is the perfect choice for your sensing needs.

Feature Benefit Bullets

Peak Wavelength (nm): 850

The peak wavelength of 850nm makes this phototransistor suitable for various applications including optical sensors and communication systems that operate in the infrared spectrum.

Optoelectronic Type: PHOTO DARLINGTON

The use of a Darlington pair in the optoelectronic design of this phototransistor provides high sensitivity and amplification, making it ideal for low-light detection and signal amplification applications.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100 °C, this phototransistor can withstand high temperature environments, making it suitable for industrial and automotive applications.

Minimum Operating Temperature: -25 °C

The phototransistor's ability to operate in low temperatures down to -25 °C allows for use in refrigeration systems, cold storage monitoring, and other cold temperature applications.

Maximum Power Dissipation: 0.05 W

The low maximum power dissipation of 0.05W ensures that the phototransistor operates efficiently without overheating, making it reliable for long-term use.

Maximum Dark Current: 1000 nA

The low maximum dark current of 1000nA ensures minimal noise and high signal-to-noise ratio, making this phototransistor suitable for low-light and high-precision applications.

Maximum Response Time: 0.00003 s

The fast maximum response time of 0.00003 seconds allows for quick detection and response to changes in light intensity, making this phototransistor ideal for high-speed applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature of this phototransistor provides easy and secure installation on circuit boards, ensuring stable and reliable connection for electronic devices.

Maximum On State Current: 0.05 A

The high maximum on-state current capability of 0.05A allows for the phototransistor to handle high current loads, making it suitable for power switching and control applications.

Technical Specifications

Phototransistors SPS203C attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Maximum Dark Current:

1000 nA

Mounting Feature:

Maximum On State Current:

.05 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.00003 s

Sub-Category:

Photo Transistors

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7