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SPS281C

Onsemi

SPS281C by Onsemi

SPS281C by Onsemi is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It has max power dissipation of 0.05W and response time of 0.00003s. Ideal for applications requiring optoelectronic sensing in temperatures ranging from -25 °C to 80°C.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

USA . 2,087 parts In-Stock

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Kepictronics

USA . 23,000 parts In-Stock

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SupplyDigital Components

Austria . 7,628 parts In-Stock

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Kulean Microsystems

USA . 6,500 parts In-Stock

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Problanco Electronics

Mexico . 4,280 parts In-Stock

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TANS Electronics

Latvia . 2,655 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 974 parts In-Stock

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Corohmni

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Overview

Elevate your projects with the SPS281C by Onsemi, a premium phototransistor designed for optimal performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this photo darlington offers peak wavelength efficiency at 850nm, making it ideal for a wide range of optoelectronic applications. With a maximum operating temperature of 80 °C and through-hole mounting feature, the SPS281C provides unmatched value and benefits to customers looking for high-quality components. Upgrade your designs today with the superior quality of the SPS281C.

Feature Benefit Bullets

Peak Wavelength (nm): 850

The peak wavelength of 850 nm makes this phototransistor suitable for various light detection applications as it falls within the near infrared range, offering good sensitivity to infrared light sources.

Optoelectronic Type: PHOTO DARLINGTON

The Photo Darlington type offers high sensitivity and gain, making this phototransistor ideal for low-light conditions where a stronger signal amplification is required.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this phototransistor can be used in environments with elevated temperatures without compromising its performance or reliability.

Minimum Operating Temperature: -25 °C

The minimum operating temperature of -25 °C allows this phototransistor to function effectively in cold environments, expanding its usability across a wide range of operating conditions.

Maximum Power Dissipation: 0.05 W

The high maximum power dissipation of 0.05 W indicates that this phototransistor can handle higher levels of power, making it durable and reliable for long-term use.

Maximum Dark Current: 1000 nA

The low maximum dark current of 1000 nA ensures minimal current flows in the absence of light, providing accurate light sensing with low noise levels for precise measurements.

Maximum Response Time: 0.00003 s

The incredibly fast maximum response time of 0.00003 s allows this phototransistor to react quickly to changes in light intensity, making it suitable for high-speed applications that require rapid feedback.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount design offers easy installation and secure mounting, ensuring stable positioning of the phototransistor for consistent and reliable operation in various electronic circuits.

Maximum On State Current: 0.03 A

The high maximum on-state current of 0.03 A allows this phototransistor to handle larger current loads, making it suitable for applications requiring higher output power or driving other components with sufficient current.

Technical Specifications

Phototransistors SPS281C attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Maximum Dark Current:

1000 nA

Mounting Feature:

Maximum On State Current:

.03 A

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.00003 s

Sub-Category:

Photo Transistors

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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