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TIL135

Texas Instruments

TIL135 by Texas Instruments

TIL135 by Texas Instruments is a phototransistor with 12 separate elements. It operates in temperatures from -65°C to 125°C, with nominal light current of 2mA and max dark current of 100nA. Ideal for applications requiring IR detection and a min collector-emitter breakdown voltage of 50V.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,558 parts In-Stock

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Digiode

USA . 600 parts In-Stock

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600

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Electronic Expediters

USA . 16 parts In-Stock

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Parana Technologies

USA . 2,289 parts In-Stock

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$0.623

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$1.693

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DigiPath Technology Company

USA . 823 parts In-Stock

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$0.686

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$0.631

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823

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IDEA Electronic Components Group

UK . 1,863 parts In-Stock

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$0.700

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$0.630

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ChromeModa Solutions

Germany . 337 parts In-Stock

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$0.700

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$0.574

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337

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One Stop Electronics

USA . 869 parts In-Stock

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$10.100

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AZTECH Wire

Italy . 274 parts In-Stock

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$13.193

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Corphita

USA . 2,238 parts In-Stock

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Overview

Unleash the power of light with the TIL135 by Texas Instruments. With a reputation for superior quality and reliability, Texas Instruments delivers top-notch phototransistors that excel in a variety of applications. The TIL135 offers unmatched value with its 12 separate elements, providing versatility and precision in capturing light. Whether you're working on industrial automation, robotics, or security systems, the TIL135 is the perfect choice for ensuring optimal performance and efficiency. Elevate your projects to the next level with the TIL135 phototransistor from Texas Instruments.

Feature Benefit Bullets

Configuration: SEPARATE, 12 ELEMENTS

Having 12 separate elements allows for more precise detection and control of light, making this phototransistor suitable for applications requiring high accuracy.

No. of Functions: 12

With 12 different functions, this phototransistor offers versatility in terms of sensing and detecting various types of light sources, making it ideal for complex applications.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor means that it offers higher sensitivity and faster response times compared to traditional photodiodes, making it a good choice for applications requiring quick and accurate light detection.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliability and stability in harsh environments, making this phototransistor suitable for industrial applications where temperature fluctuations are common.

Shape: ROUND

The round shape allows for easy integration into various designs, making it a versatile option for different types of electronic devices and equipment.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature enables this phototransistor to function effectively in cold environments, expanding its usability in a wide range of applications.

Nominal Light Current: 2 mA

With a nominal light current of 2 mA, this phototransistor provides reliable and consistent output signals, making it suitable for applications requiring precise light detection.

Maximum Dark Current: 100 nA

The low maximum dark current indicates minimal noise and interference in low-light conditions, ensuring accurate light detection in various lighting environments.

Infrared (IR) Range: YES

The ability to detect infrared light expands the range of applications for this phototransistor, making it a valuable component for devices that require IR sensing capabilities.

Minimum Collector-emitter Breakdown Voltage: 50 V

The high collector-emitter breakdown voltage provides protection against voltage spikes and ensures the reliability of the phototransistor in demanding operating conditions.

Technical Specifications

Phototransistors TIL135 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SEPARATE, 12 ELEMENTS

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

Nominal Light Current:

2 mA

No. of Functions:

12

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Optoelectronic Type:

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

TIL135 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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