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TIL132

Texas Instruments

TIL132 by Texas Instruments

TIL132 by Texas Instruments is a phototransistor with 9 separate elements, operating temperature range of -65 to 125°C. It has nominal light current of 2mA and max dark current of 100nA. Ideal for applications requiring IR detection with min collector-emitter breakdown voltage of 50V.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,950 parts In-Stock

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Digiode

USA . 2,242 parts In-Stock

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ECAB

Sweden . 16 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 2,341 parts In-Stock

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$0.069

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$1.441

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$0.069

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DigiPath Technology Company

USA . 926 parts In-Stock

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$0.076

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926

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IDEA Electronic Components Group

UK . 1,141 parts In-Stock

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$0.078

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$0.070

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1,141

$0.078

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ChromeModa Solutions

Germany . 665 parts In-Stock

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$0.078

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$0.064

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665

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One Stop Electronics

USA . 592 parts In-Stock

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$1.100

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AZTECH Wire

Italy . 643 parts In-Stock

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Corphita

USA . 74 parts In-Stock

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Overview

Looking for high-quality phototransistors? Look no further than the TIL132 by Texas Instruments! With a reputation for excellence in manufacturing, these phototransistors offer exceptional performance and reliability. Ideal for applications requiring light sensing, these devices provide value by delivering accurate results in a wide range of temperatures. Trust Texas Instruments to provide you with top-of-the-line optoelectronic components that will exceed your expectations.

Feature Benefit Bullets

Configuration: SEPARATE, 9 ELEMENTS

Having 9 separate elements allows for precise detection and control of light intensity, making this product suitable for applications requiring high accuracy.

No. of Functions: 9

The 9 functions provide versatility in how the phototransistor can be used, offering multiple options for customization in different applications.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor means that this product can convert light energy into electrical signals, making it ideal for light sensing and control applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this phototransistor can withstand elevated temperatures, increasing its durability and reliability in various environments.

Shape: ROUND

The round shape makes it easy to mount and integrate into different systems, allowing for straightforward installation and use in different setups.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows this phototransistor to function effectively in cold environments, expanding its usability in a wide range of temperature conditions.

Nominal Light Current: 2 mA

Offering a high nominal light current ensures strong signal output in the presence of light, making this a reliable choice for applications requiring consistent light detection.

Maximum Dark Current: 100 nA

The low maximum dark current indicates minimal leakage current in the absence of light, ensuring accurate light sensing and control without interference from background noise.

Infrared (IR) Range: YES

Having infrared detection capabilities expands the range of light sources that can be detected, making this phototransistor suitable for applications involving both visible and infrared light.

Minimum Collector-emitter Breakdown Voltage: 50 V

The high minimum breakdown voltage allows this phototransistor to handle high voltages safely, providing protection against electrical surges and ensuring long-term reliability in operation.

Technical Specifications

Phototransistors TIL132 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SEPARATE, 9 ELEMENTS

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

Nominal Light Current:

2 mA

No. of Functions:

9

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Optoelectronic Type:

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

TIL132 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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