Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SFH309FA-3/4 by Osram Opto Semiconductors is a single phototransistor with peak wavelength of 900nm. It operates b/w -40 to 100°C, with max power dissipation of 0.165W. Ideal for applications requiring IR detection and radial mounting, it has a collector-emitter breakdown voltage of 35V and on-state current of 0.015A.
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The peak wavelength of 900nm makes this phototransistor suitable for applications requiring detection in the infrared range.
With a high maximum operating temperature of 100°C, this phototransistor can withstand harsh environments and maintain reliability.
The low minimum operating temperature of -40°C ensures that this phototransistor can function effectively in cold conditions.
The nominal light current of 0.63mA enables accurate detection of light levels, making this phototransistor ideal for light sensing applications.
The low maximum dark current of 50nA helps reduce noise in low-light conditions, enhancing the sensitivity and performance of this phototransistor.
The inclusion of an infrared range makes this phototransistor suitable for applications that require detection of infrared radiation.
Phototransistors SFH309FA-3/4 attributes and parameters. Explore more Phototransistors devices from Osram Opto Semiconductors
Minimum Collector-emitter Breakdown Voltage:
Configuration:
Maximum Dark Current:
Infrared (IR) Range:
JESD-609 Code:
Nominal Light Current:
Mounting Feature:
No. of Functions:
Maximum On State Current:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Peak Wavelength (nm):
Maximum Power Dissipation:
Sub-Category:
Terminal Finish:
SFH309FA-3/4 Optoelectronics trade compliance attributes, and parameters.
HTS
8541.40.70.80
SB
ams OSRAM is a global leader in optical solutions. We offer a unique product and technology portfolio for sensing, illumination and visualization: from prime-quality light emitters and optical components to micro-modules, light sensors, ICs and related software. Designing pioneering optical solutions that inspire our customers is what we do best. We are known for our imagination and deep engineering expertise. As trusted partner serving the entire value chain of optical solutions, we enable our customers in the consumer, automotive, industrial and healthcare sectors maintain their competitive edge. We add intelligence to light and passion to innovation to enrich people’s lives.
2N2222A
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148
Panjit International
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
INA826AIDGKR
Texas Instruments
INA826AIDGKR by Texas Instruments is an instrumentation amplifier with 150uV max input offset voltage, 0.095uA max average bias current, and 1MHz nominal bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high common mode rejection ratio of 120dB.
FDD5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
EU2B-YS3103F
Idec
ROTARY SWITCH;
BSS138LT1G
Onsemi
BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.
Silicon Transistor
Forward International Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Maximum Operating Temperature: 200 Cel; No. of Phases: 1;
ABS07-32.768KHZ-T
Abracon
Abracon ABS07-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring 0.032768 MHz frequency precision in a compact surface-mount design with gold over nickel finish.
Digitron Semiconductors
Sun Wai Electronic
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
261
New England Microwave
Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;
C0805C104K5RACTU
KEMET Corporation
KEMET C0805C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and reliable performance.
LIS3DHTR
STMicroelectronics
LIS3DHTR by STMicroelectronics is a 16-terminal accelerometer with output range of 0.18-1.62V, ideal for motion sensing applications. Operating temperature ranges from -40 to 85°C, making it suitable for various environments. With a compact square package body of 3x3mm and digital voltage output type, it is commonly used in surface mount designs.
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
LL4148
First Components International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
M24308/2-1F
Cinch Connectivity Solutions
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;
LM358M
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Telcom Semiconductor
SFH309-4
Infineon Technologies
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 860; Maximum Response Time: .000007 s;
PT480FE0000F
Sharp Corporation
Sharp Corporation's PT480FE0000F is a 1.6mm PHOTO TRANSISTOR with peak wavelength of 860nm. It operates b/w -25°C to 85°C, with collector-emitter breakdown voltage of 35V. Ideal for applications requiring infrared detection and light current of 0.8mA with low dark current at 100nA.
BPV11
Temic Semiconductors
PHOTO TRANSISTOR; Nominal Light Current: 10 mA; Additional Features: HIGH SENSITIVITY; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 70 V; Shape: ROUND;
QSD122
Qt Optoelectronics
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Peak Wavelength (nm): 880; Infrared (IR) Range: YES;
SFH309-3
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 200 nA;
SDP8405-003
Honeywell Sensing And Control
SDP8405-003 by Honeywell Sensing And Control is a PHOTO TRANSISTOR with a max operating temperature of 100°C and a min operating temperature of -40°C. It has a max power dissipation of 0.07W and a max dark current of 100nA. This through-hole mount optoelectronic component is suitable for various applications requiring fast response time.
OP800A
Optek Technology
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 890; Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1; Shape: ROUND;
TPS613-C
Toshiba
PHOTO TRANSISTOR; Size: 3 mm; Nominal Light Current: .06 mA; Configuration: SINGLE; Maximum Operating Temperature: 75 Cel; Maximum Dark Current: 100 nA;
SFH320FA-3/-4
Infineon's SFH320FA-3/-4 phototransistors operate b/w -40°C to 100°C, with peak wavelength of 900nm. They have a max power dissipation of 0.165W and response time of 0.000008s. Ideal for surface mount applications, these devices can handle a max on-state current of 0.015A.
QSD124.A4R0
QSD124.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 6mA, dark current of 100nA, and IR range. Ideal for applications requiring photo detection in various environments.
QSD123
Rochester Electronics
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; JESD-609 Code: e3; Size: 5 mm;
SFH325-Z
Osram Opto Semiconductors
The Osram Opto Semiconductors SFH325-Z is a single phototransistor with a peak wavelength of 980nm. It operates b/w -40°C to 100°C, has a min collector-emitter breakdown voltage of 35V, and features an optoelectronic type of PHOTO TRANSISTOR. Ideal for applications requiring infrared detection and light current up to 0.016mA.
1N5724
1N5724 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. Ideal for applications requiring fast response times and IR detection in through-hole mounting setups.
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000008 s; Size: 5 mm; Maximum Dark Current: 100 nA;
SFH300FA
SFH300FA by Infineon Technologies is a phototransistor with peak wavelength of 870nm, max operating temp of 100°C, and min operating temp of -40°C. It has a max on state current of 0.05A and terminal finish of Sn/Pb. Ideal for applications requiring precise light detection in environments with varying temperatures.
SFH302-4
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Power Dissipation: .15 W; Maximum Response Time: .000014 s;
TPS605(LB)
PHOTO DARLINGTON; No. of Functions: 1; Maximum Dark Current: 250 nA; Size: 1.6 mm; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 30 V;
LS614
LS614 by Texas Instruments is a single configuration phototransistor with a round shape. It operates in temperatures ranging from -65°C to 125°C and has a max power dissipation of 0.05W. With nominal light current of 4mA, it is ideal for applications requiring fast response times such as infrared sensing in electronic devices.
SPS289C
SPS289C by Onsemi is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It operates b/w -25 °C to 80°C, has max power dissipation of 0.05W, and response time of 0.00003s. Ideal for applications requiring through hole mounting and on-state current up to 0.03A.
TIL608
TIL608 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With a response time of 8μs and dark current of 25nA, it's ideal for surface mount applications in various industries.
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SFH309FA-4
SFH309FA-4 by Infineon Technologies is a phototransistor with a peak wavelength of 900nm. It can operate in temperatures ranging from -55°C to 100°C and has a max power dissipation of 0.165W. This through-hole mount device is commonly used in applications requiring fast response times and low dark current.
PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; No. of Functions: 1; Maximum Power Dissipation: .165 W;
Siemens
PHOTO TRANSISTOR; Nominal Light Current: 1 mA; Maximum Operating Temperature: 100 Cel; Shape: ROUND; Maximum Dark Current: 200 nA; Additional Features: DAYLIGHT FILTER, HIGH RELIABILITY;
SFH3015FA
Osram Opto Semiconductors' SFH3015FA is a single phototransistor with peak wavelength of 870nm. It operates b/w -25°C to 85°C, featuring a nominal light current of 100mA and max dark current of 50nA. Ideal for applications requiring infrared detection, it has a min collector-emitter breakdown voltage of 15V and can handle a max on state current of 0.015A.
SFH309FA
SFH309FA by Infineon Technologies is a phototransistor with peak wavelength of 900nm, max operating temp of 100°C, and min operating temp of -55°C. Ideal for applications requiring through hole mounting, it has a max on state current of 0.015A and max dark current of 200nA.
PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: BRIGHT TIN OVER NICKEL; Nominal Light Current: .4 mA; Maximum Power Dissipation: .165 W; JESD-609 Code: e3;
PHOTO TRANSISTOR; Infrared (IR) Range: YES; Peak Wavelength (nm): 900; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 200 nA; Size: 3 mm;
SFH3219-Z
PHOTO TRANSISTOR; Nominal Light Current: .063 mA; Shape: ROUND; Size: 2.575 mm; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE;
SFH3710-Z
PHOTO TRANSISTOR; Terminal Finish: MATTE TIN OVER NICKEL; Size: 1.4 mm; Shape: RECTANGULAR; Infrared (IR) Range: NO; Peak Wavelength (nm): 570;
SFH309FA-4/5
PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; Nominal Light Current: 1 mA; Maximum On State Current: .015 A; Maximum Power Dissipation: .165 W;
SFH3710
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; Shape: SQUARE; Packing Method: TR, 7 INCH; Maximum Dark Current: 50 nA;
SFH313FA
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Size: 5 mm; Configuration: SINGLE; Minimum Operating Temperature: -40 Cel;
PHOTO TRANSISTOR; Additional Features: DAYLIGHT FILTER; Infrared (IR) Range: YES; Minimum Operating Temperature: -55 Cel; Size: 5 mm; No. of Functions: 1;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Peak Wavelength (nm): 880; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 100 Cel;
PHOTO TRANSISTOR; Size: 5 mm; Configuration: SINGLE; No. of Functions: 1; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel;
SFH3400-Z
PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 20 V; No. of Functions: 1; Infrared (IR) Range: YES; Configuration: SINGLE; Shape: SQUARE;
SFH3710-3/4-Z
PHOTO TRANSISTOR; Minimum Operating Temperature: -40 Cel; Configuration: SINGLE; Infrared (IR) Range: NO; Maximum Dark Current: 50 nA; Peak Wavelength (nm): 570;
SFH313FA-3/4
The Osram Opto Semiconductors SFH313FA-3/4 is a 5mm phototransistor with peak wavelength of 870nm. It operates b/w -40 to 100°C, with max power dissipation of 0.2W and response time of 0.000014s. Ideal for applications requiring fast light detection in IR range, such as optical sensors and proximity detectors.
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