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QSD124.A4R0

Qt Optoelectronics

QSD124.A4R0 by Qt Optoelectronics

QSD124.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 6mA, dark current of 100nA, and IR range. Ideal for applications requiring photo detection in various environments.

Median Price

$0.320

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 35 parts In-Stock

1+ parts

$0.320

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35

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Vyrian

USA . 3,917 parts In-Stock

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3,917

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 4,981 parts In-Stock

1+ parts

$0.320

100+ parts

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1k+ parts

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10k+ parts

$0.314

4,981

$0.320

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Argo Parts USA

USA . 460 parts In-Stock

1+ parts

$0.320

100+ parts

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$0.310

460

$0.320

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$0.310

AZTECH Wire

Italy . 681 parts In-Stock

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$7.212

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681

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Netroflash

USA . 1,000 parts In-Stock

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$0.314

1k+ parts

$0.304

10k+ parts

$0.298

1,000

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$0.314

$0.304

$0.298

Overview

Unleash the power of light with the QSD124.A4R0 phototransistor by Qt Optoelectronics! Designed for reliability and precision, this 5mm round photo transistor offers unparalleled performance in a variety of applications. With an infrared range and a minimum collector-emitter breakdown voltage of 30V, this product ensures accurate detection and control in any environment. Trust Qt Optoelectronics to deliver superior quality and value with every purchase. Elevate your projects with the QSD124.A4R0 and experience the difference today!

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes this phototransistor easy to integrate into various electronic devices.

Size: 5 mm

Compact size allows for versatile applications in small spaces without compromising performance.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor type offers high sensitivity to light, ensuring accurate detection in different lighting conditions.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature, this phototransistor can withstand challenging environmental conditions.

Shape: ROUND

Round shape provides consistent light detection from all angles, making it ideal for omnidirectional sensing applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for reliable performance in extreme cold environments.

Nominal Light Current: 6 mA

High nominal light current ensures efficient conversion of light into electrical signals for precise detection.

Maximum Dark Current: 100 nA

Low maximum dark current minimizes background noise, enhancing sensitivity to light signals.

Infrared (IR) Range: YES

Infrared range capability enables detection of invisible infrared light, expanding the phototransistor's sensing capabilities.

Minimum Collector-emitter Breakdown Voltage: 30 V

High minimum breakdown voltage provides protection against voltage spikes, ensuring the longevity of the phototransistor.

Technical Specifications

Phototransistors QSD124.A4R0 attributes and parameters. Explore more Phototransistors devices from Qt Optoelectronics

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

Nominal Light Current:

6 mA

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Shape:

ROUND

Size:

5 mm

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