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QSD124A4R0

Onsemi

QSD124A4R0 by Onsemi

The Onsemi QSD124A4R0 is a 5mm phototransistor with peak wavelength of 880nm. It operates b/w -40°C to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring IR detection in through-hole mounting configurations.

Median Price

$0.640

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,948 parts In-Stock

1+ parts

$0.640

100+ parts

$0.320

1k+ parts

$0.265

10k+ parts

$0.194

1,948

$0.640

$0.320

$0.265

$0.194

DigiKey

USA . 3,060 parts In-Stock

1+ parts

$0.660

100+ parts

$0.332

1k+ parts

$0.275

10k+ parts

$0.228

3,060

$0.660

$0.332

$0.275

$0.228

Rochester

USA . 347 parts In-Stock

1+ parts

-

100+ parts

$0.223

1k+ parts

$0.185

10k+ parts

$0.165

347

-

$0.223

$0.185

$0.165

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,437 parts In-Stock

1+ parts

$0.173

100+ parts

-

1k+ parts

-

10k+ parts

-

1,437

$0.173

-

-

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Nova Conductors

Japan . 53 parts In-Stock

1+ parts

$0.320

100+ parts

-

1k+ parts

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10k+ parts

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53

$0.320

-

-

-

Flip Electronics

USA . 48,000 parts In-Stock

1+ parts

-

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48,000

-

-

-

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Chip Stock

USA . 2,600 parts In-Stock

1+ parts

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2,600

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Vyrian

USA . 2,509 parts In-Stock

1+ parts

-

100+ parts

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2,509

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-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,144 parts In-Stock

1+ parts

$0.092

100+ parts

-

1k+ parts

-

10k+ parts

-

1,144

$0.092

-

-

-

Aztec Data Supply Inc.

USA . 111 parts In-Stock

1+ parts

$0.125

100+ parts

-

1k+ parts

-

10k+ parts

-

111

$0.125

-

-

-

Semicontronic

India . 912 parts In-Stock

1+ parts

$0.155

100+ parts

$0.151

1k+ parts

$0.150

10k+ parts

-

912

$0.155

$0.151

$0.150

-

Corphita

USA . 2,211 parts In-Stock

1+ parts

$0.164

100+ parts

-

1k+ parts

-

10k+ parts

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2,211

$0.164

-

-

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Corohmni

South Africa . 137 parts In-Stock

1+ parts

$0.182

100+ parts

-

1k+ parts

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10k+ parts

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137

$0.182

-

-

-

Component Stockers USA

USA . 20,758 parts In-Stock

1+ parts

$0.250

100+ parts

$0.230

1k+ parts

$0.290

10k+ parts

$0.210

20,758

$0.250

$0.230

$0.290

$0.210

Continental Prestige Electronics

USA . 6,945 parts In-Stock

1+ parts

$0.320

100+ parts

-

1k+ parts

-

10k+ parts

$0.314

6,945

$0.320

-

-

$0.314

Argo Parts USA

USA . 964 parts In-Stock

1+ parts

$0.320

100+ parts

-

1k+ parts

-

10k+ parts

$0.310

964

$0.320

-

-

$0.310

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.320

100+ parts

-

1k+ parts

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50

$0.320

-

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Metaverse IC Inc.

Canada . 36,800 parts In-Stock

1+ parts

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36,800

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TANS Electronics

Latvia . 7,857 parts In-Stock

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7,857

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SupplyDigital Components

Austria . 5,175 parts In-Stock

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5,175

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Kulean Microsystems

USA . 4,586 parts In-Stock

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4,586

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Perfect Parts

USA . 3,994 parts In-Stock

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3,994

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Kepictronics

USA . 3,600 parts In-Stock

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3,600

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Problanco Electronics

Mexico . 2,619 parts In-Stock

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2,619

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Supply Digital

USA . 1,591 parts In-Stock

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1,591

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UHIMA Technologies

Türkiye . 983 parts In-Stock

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983

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Overview

Enhance your project with the QSD124A4R0 phototransistor by Onsemi - the industry leader in optoelectronic components. With a peak wavelength of 880nm, this high-quality device offers exceptional sensitivity and reliability for a wide range of applications. Whether you're designing security systems, industrial automation, or even medical equipment, this phototransistor provides unparalleled performance in a compact 5mm size. Trust Onsemi's reputation for excellence and choose the QSD124A4R0 for all your light sensing needs.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate into various electronic devices and applications.

Size: 5 mm

Compact size allows for flexibility in placement and installation, especially in space-constrained environments.

Peak Wavelength (nm): 880

Optimal peak wavelength for efficient detection and response to light sources in the 880nm range.

Optoelectronic Type: PHOTO TRANSISTOR

Photo transistor technology ensures reliable and accurate light sensing capabilities for diverse applications.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for reliable performance even in harsh environments with elevated temperatures.

Shape: ROUND

Round shape facilitates easy alignment and installation, ensuring consistent performance in various mounting configurations.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature range allows for usage in cold environments without compromising performance.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and corrosion resistance for long-lasting performance.

Maximum Power Dissipation: 0.1 W

Low power dissipation minimizes energy consumption and heat generation, optimizing overall efficiency.

Nominal Light Current: 6 mA

High nominal light current ensures sensitive and accurate light detection for precise control and measurement applications.

Maximum Dark Current: 100 nA

Low maximum dark current minimizes noise and improves signal-to-noise ratio for reliable light sensing in low-light conditions.

Infrared (IR) Range: YES

Infrared range capability enables detection and response to infrared light sources, expanding the range of applications for the product.

Minimum Collector-emitter Breakdown Voltage: 30 V

High minimum breakdown voltage ensures protection against voltage spikes and overloads, enhancing the durability and reliability of the product.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature simplifies installation and ensures secure and stable placement on PCBs or other surfaces.

Technical Specifications

Phototransistors QSD124A4R0 attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

6 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.1 W

Shape:

ROUND

Size:

5 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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