Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The Onsemi QSD124A4R0 is a 5mm phototransistor with peak wavelength of 880nm. It operates b/w -40°C to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring IR detection in through-hole mounting configurations.
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Single configuration makes it easy to integrate into various electronic devices and applications.
Compact size allows for flexibility in placement and installation, especially in space-constrained environments.
Optimal peak wavelength for efficient detection and response to light sources in the 880nm range.
Photo transistor technology ensures reliable and accurate light sensing capabilities for diverse applications.
High maximum operating temperature allows for reliable performance even in harsh environments with elevated temperatures.
Round shape facilitates easy alignment and installation, ensuring consistent performance in various mounting configurations.
Low minimum operating temperature range allows for usage in cold environments without compromising performance.
Matte tin terminal finish provides good conductivity and corrosion resistance for long-lasting performance.
Low power dissipation minimizes energy consumption and heat generation, optimizing overall efficiency.
High nominal light current ensures sensitive and accurate light detection for precise control and measurement applications.
Low maximum dark current minimizes noise and improves signal-to-noise ratio for reliable light sensing in low-light conditions.
Infrared range capability enables detection and response to infrared light sources, expanding the range of applications for the product.
High minimum breakdown voltage ensures protection against voltage spikes and overloads, enhancing the durability and reliability of the product.
Through-hole mounting feature simplifies installation and ensures secure and stable placement on PCBs or other surfaces.
Phototransistors QSD124A4R0 attributes and parameters. Explore more Phototransistors devices from Onsemi
Minimum Collector-emitter Breakdown Voltage:
Configuration:
Maximum Dark Current:
Infrared (IR) Range:
JESD-609 Code:
Nominal Light Current:
Mounting Feature:
No. of Functions:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Peak Wavelength (nm):
Maximum Power Dissipation:
Shape:
Size:
Sub-Category:
Terminal Finish:
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148WT-7
Diodes Incorporated
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
OHN3020U
Tt Electronics Plc
OHN3020U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 5mT. It features an output range of 25mA and operates in temperatures ranging from -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields, such as automotive sensors or industrial automation systems.
1N4148
Renesas Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
Micro Commercial Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FDN5618P
Onsemi
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
LM358AN
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BSS138
Vishay Intertechnology
Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.
Cheng-yi Electronic
1N4148WS
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20U+
Analog Devices
DS18B20U+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
1N4148WT
Yangzhou Yangjie Electronics
LM358ADR
Texas Instruments
LM358ADR by Texas Instruments is an operational amplifier with 2 functions, featuring a max input offset voltage of 5000 uV and nominal voltage of 5V. Widely used in applications requiring high voltage gain, it operates within a temperature range of 0-70°C and offers frequency compensation for stability.
First Components International
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;
2N7002
Silicon Standard
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Rfe International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMBJ18CA
Changzhou Galaxy Century Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDV304P
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
2N2222A
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
BPX43
Infineon Technologies
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 300 nA; Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0;
BPT-BP1A34
Yellow Stone
PHOTO TRANSISTOR; Maximum Dark Current: 100 nA; Shape: ROUND; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;
TPS604(F)
Toshiba
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 125 Cel; JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel;
SFH501-1
PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 840; Maximum Dark Current: 50 nA; Maximum On State Current: .02 A;
LS617
LS617 by Texas Instruments is a single phototransistor with a round shape. It operates b/w -65°C to 125°C, with a max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection, it has a collector-emitter breakdown voltage of 50V.
QSE113E3R0
QSE113E3R0 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 30V. Ideal for optoelectronic applications requiring fast and precise light detection in compact spaces.
BPW77NA
Vishay Intertechnology's BPW77NA is a 4mm phototransistor with peak wavelength of 850nm. It operates b/w -40 to 125°C, has a response time of 0.0000038s, and features matte tin terminal finish. Ideal for applications requiring IR detection in through-hole mounting setups.
LPT80A
Osram Opto Semiconductors
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin (Sn); Additional Features: HIGH SENSITIVITY; Maximum On State Current: .05 A; Shape: ROUND;
TPS603A
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Nominal Light Current: .02 mA; Maximum Power Dissipation: .075 W; Minimum Operating Temperature: -20 Cel;
BPY62-4
Infineon's BPY62-4 phototransistor operates b/w -55°C to 125°C with peak wavelength of 850nm. It has a max power dissipation of 0.3W and response time of 9ns. Ideal for applications requiring through hole mounting, with max on-state current of 50mA.
TIL601
TIL601 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection in through-hole mounting configurations.
TIED458
TIED458 by Texas Instruments is a phototransistor with peak wavelength of 820nm, max temp of 85°C, and response time of 0.00000001s. Ideal for applications requiring precise light detection in environments ranging from -40°C to 85°C.
ALS-PT19-315C/L177/TR8
Everlight Electronics
Everlight Electronics' ALS-PT19-315C/L177/TR8 is a 1.2mm RECTANGULAR PHOTO TRANSISTOR with peak wavelength of 630nm. It operates b/w -40°C to 85°C, with light current of 1.52mA and dark current up to 100nA. Ideal for SURFACE MOUNT applications at a supply voltage of 5V.
TPS601A(B,F)
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Infrared (IR) Range: YES; Peak Wavelength (nm): 800; Nominal Light Current: .2 mA; Maximum On State Current: .05 A;
TEST2600
Telefunken Microelectronics
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 100 nA; Peak Wavelength (nm): 920;
SD1440-003L
Micro Switch
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Maximum Response Time: .000015 s; Minimum Operating Temperature: -55 Cel;
LS611
LS611 by Texas Instruments is a single phototransistor with a round shape. It operates b/w -65°C to 125°C, with a max power dissipation of 0.05W. Ideal for applications requiring fast response times and infrared range detection.
TPS611
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .05 A; Additional Features: HIGH SENSITIVITY; Maximum Dark Current: 100 nA; Configuration: SINGLE;
SFH313FA-3
SFH313FA-3 by Infineon Technologies is a phototransistor with peak wavelength of 870nm. It operates b/w -55°C to 100°C, with max on state current of 0.05A. Ideal for applications requiring through hole mounting and low dark current below 200nA.
QSD722
QSD722 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time of 6μs and collector-emitter breakdown voltage of 30V.
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QSD123.A4R0
Qt Optoelectronics
QSD123.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 4mA, dark current of 100nA, and IR range. Ideal for applications requiring reliable photo detection in various temperature conditions.
QSD123A4R0
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Infrared (IR) Range: YES; Nominal Light Current: 4 mA; JESD-609 Code: e3;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: MATTE TIN; Infrared (IR) Range: YES; Configuration: SINGLE; Shape: ROUND;
QSD124A4R0
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V; JESD-609 Code: e3;
QSD124.A4R0
QSD124.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 6mA, dark current of 100nA, and IR range. Ideal for applications requiring photo detection in various environments.
QSD123
Rochester Electronics
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; JESD-609 Code: e3; Size: 5 mm;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000008 s; Size: 5 mm; Maximum Dark Current: 100 nA;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Dark Current: 100 nA; Shape: ROUND; Configuration: SINGLE;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: MATTE TIN; Size: 5 mm; Configuration: SINGLE; Maximum Power Dissipation: .1 W;
QSD122
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3; Nominal Light Current: 1 mA; Infrared (IR) Range: YES;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Peak Wavelength (nm): 880; Infrared (IR) Range: YES;
QSD124
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .1 W; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Shape: ROUND; JESD-609 Code: e3;
The Onsemi QSD124 is a 5mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring fast response time and IR range detection in through hole mounting setups.
QSD124.A4A0
PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1; Configuration: SINGLE; Nominal Light Current: 6 mA; Shape: ROUND;
QSD124.A6A0
PHOTO TRANSISTOR; Nominal Light Current: 6 mA; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 100 nA; Infrared (IR) Range: YES; No. of Functions: 1;
QSD124.A6R0
PHOTO TRANSISTOR; Size: 5 mm; Nominal Light Current: 6 mA; Configuration: SINGLE; Maximum Dark Current: 100 nA; Minimum Operating Temperature: -40 Cel;
PHOTO TRANSISTOR; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1; Nominal Light Current: 6 mA; Size: 5 mm;
PHOTO TRANSISTOR; No. of Functions: 1; Infrared (IR) Range: YES; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 30 V;
PHOTO TRANSISTOR; Nominal Light Current: 6 mA; Configuration: SINGLE; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -40 Cel;
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