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TIL602

Texas Instruments

TIL602 by Texas Instruments

TIL602 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and infrared range detection in through-hole mounting configurations.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 6,563 parts In-Stock

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Electronic Expediters

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Digiode

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Parana Technologies

USA . 929 parts In-Stock

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$0.384

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$1.580

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DigiPath Technology Company

USA . 1,311 parts In-Stock

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$0.422

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IDEA Electronic Components Group

UK . 1,825 parts In-Stock

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$0.388

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ChromeModa Solutions

Germany . 999 parts In-Stock

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One Stop Electronics

USA . 1,101 parts In-Stock

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AZTECH Wire

Italy . 641 parts In-Stock

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Corphita

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Assy Fe

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Overview

Unlock a world of possibilities with the Texas Instruments TIL602 phototransistor. Designed with precision and expertise, this phototransistor offers unparalleled performance in sensing and detecting light. From robotics to automotive applications, the TIL602 delivers reliable and accurate results, making it the go-to choice for engineers and hobbyists alike. Experience the quality and innovation that Texas Instruments is renowned for, and elevate your projects to new heights with the TIL602 phototransistor.

Feature Benefit Bullets

Peak Wavelength (nm): 900

The peak wavelength of 900 nm makes this phototransistor suitable for applications requiring detection in the infrared range.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this phototransistor can withstand harsh environmental conditions without compromising performance.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C enables this phototransistor to be used in a wide range of temperature environments.

Maximum Power Dissipation: 0.05 W

The maximum power dissipation of 0.05W ensures efficient energy usage and helps in preventing overheating of the phototransistor.

Maximum Dark Current: 25 nA

The low maximum dark current of 25nA results in minimal noise and accurate detection of light signals in low light conditions.

Infrared (IR) Range: YES

The ability to detect infrared light makes this phototransistor suitable for applications where IR detection is required, such as in remote controls or security systems.

Maximum Response Time: 0.000008 s

The fast response time of 0.000008s ensures quick and accurate detection of light changes, making it ideal for high-speed applications.

Minimum Collector-emitter Breakdown Voltage: 50 V

With a minimum collector-emitter breakdown voltage of 50V, this phototransistor offers high voltage tolerance and reliability in demanding electrical circuits.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the phototransistor on PCBs, making it convenient for assembly in electronic devices.

Technical Specifications

Phototransistors TIL602 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

2 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

TIL602 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

NSN

5961-00-426-4954, 5961004264954

NIIN

004264954

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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