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TIL601

Texas Instruments

TIL601 by Texas Instruments

TIL601 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection in through-hole mounting configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,252 parts In-Stock

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Digiode

USA . 3,650 parts In-Stock

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One Stop Electronics

USA . 801 parts In-Stock

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$0.100

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$0.100

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Parana Technologies

USA . 824 parts In-Stock

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$0.195

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$1.517

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824

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DigiPath Technology Company

USA . 521 parts In-Stock

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$0.215

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$0.197

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521

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ChromeModa Solutions

Germany . 5,822 parts In-Stock

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$0.219

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$0.180

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IDEA Electronic Components Group

UK . 524 parts In-Stock

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$0.219

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$0.197

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524

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Ampacity Inc.

Singapore . 731 parts In-Stock

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$4.100

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AZTECH Wire

Italy . 348 parts In-Stock

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Semicontronic

India . 1,190 parts In-Stock

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$13.100

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$12.772

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$12.707

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Corphita

USA . 991 parts In-Stock

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Corohmni

South Africa . 94 parts In-Stock

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Assy Fe

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Overview

Unlock the power of light with the TIL601 by Texas Instruments. Designed with precision and quality in mind, this phototransistor offers unparalleled performance in a variety of applications. From industrial automation to consumer electronics, the TIL601 provides reliable sensing and control solutions. With its fast response time and wide operating temperature range, customers can trust in the value and benefits this product brings. Experience the advantages of Texas Instruments' expertise and innovation with the TIL601 phototransistor.

Feature Benefit Bullets

Peak Wavelength (nm): 900

The peak wavelength of this phototransistor at 900nm makes it suitable for applications that require detection in the near-infrared range.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this phototransistor can withstand elevated temperatures, making it suitable for industrial or high-temperature environments.

Nominal Light Current: 0.5 mA

The high nominal light current of 0.5mA indicates a strong response to light, providing accurate and reliable data in light sensing applications.

Maximum Response Time: 0.000008 s

The fast maximum response time of 0.000008s ensures quick detection and responsiveness, making this phototransistor ideal for high-speed applications.

Minimum Collector-emitter Breakdown Voltage: 50 V

With a minimum collector-emitter breakdown voltage of 50V, this phototransistor offers a robust electrical insulation capability, ensuring safe and reliable operation.

Technical Specifications

Phototransistors TIL601 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

.5 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

TIL601 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

NSN

5961-01-043-6253, 5961010436253

NIIN

010436253

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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