Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Vishay Intertechnology's VEMT2520X01 is a 1.8mm phototransistor with peak wavelength of 850nm. Operating b/w -40°C to 100°C, it has a max power dissipation of 0.1W and nominal light current of 6mA. Ideal for applications requiring IR detection in compact setups using surface mount technology.
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Having a single configuration makes this phototransistor easy to use and integrate into various applications.
With a compact size of 1.8mm, this phototransistor can be used in space-constrained electronic designs.
The peak wavelength of 850nm allows for precise detection and measurement in a specific range.
Being a phototransistor, this product offers high sensitivity to light, making it ideal for light sensing applications.
With a maximum operating temperature of 100°C, this phototransistor can withstand high-temperature environments.
The round shape of this phototransistor allows for easy mounting and alignment in electronic circuits.
With a minimum operating temperature of -40°C, this phototransistor can operate in extreme cold conditions.
The high maximum power dissipation of 0.1W ensures the reliability and durability of this phototransistor.
The nominal light current of 6mA ensures accurate and reliable light detection performance.
With a low maximum dark current of 100nA, this phototransistor provides excellent performance in low light conditions.
The inclusion of an infrared (IR) range makes this phototransistor suitable for applications requiring IR light detection.
The TR packing method ensures safe transportation and storage of this phototransistor.
The high minimum collector-emitter breakdown voltage of 20V enhances the reliability and longevity of this phototransistor.
The surface mounting feature simplifies the installation and use of this phototransistor in electronic assemblies.
The high maximum on-state current of 0.05A allows for efficient and reliable operation of this phototransistor.
Phototransistors VEMT2520X01 attributes and parameters. Explore more Phototransistors devices from Vishay Intertechnology
Additional Features:
Minimum Collector-emitter Breakdown Voltage:
Configuration:
Maximum Dark Current:
Infrared (IR) Range:
Nominal Light Current:
Mounting Feature:
No. of Functions:
Maximum On State Current:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Packing Method:
Peak Wavelength (nm):
Maximum Power Dissipation:
Shape:
Size:
VEMT2520X01 Optoelectronics trade compliance attributes, and parameters.
HTS
8541.40.70.80
SB
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
BAV99
NXP Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
First Components International
1N4148
Wuxi Xuyang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM358N
Freescale Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Vishay Intertechnology
MMBT3904-7-F
Diodes Incorporated
Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
SMBJ18CA
Yageo
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDV304P
Onsemi
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
MBRA160T3G
MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.
LL4148
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;
DP83848IVVX/NOPB
National Semiconductor
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;
2N2222A
International Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
Ksl Microdevices
Hi-tron Semiconductor
MMBT2222ALT1G
Rochester Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
Excel (Suzhou) Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Minilogic Device
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
SFH3710
Osram Opto Semiconductors
Osram Opto Semiconductors SFH3710 is a single phototransistor with peak wavelength of 570nm. It has max operating temp of 85°C and min of -40°C. Ideal for surface mount applications, it features max on state current of 0.02A and nominal light current of 0.0025mA.
BPX38-5
Infineon Technologies
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A; Maximum Response Time: .000015 s;
SFH3204-Z
SFH3204-Z by Osram Opto Semiconductors is a single phototransistor with peak wavelength of 920nm. It operates b/w -40 to 100°C, with max on-state current of 0.015A. Ideal for applications requiring IR detection in surface mount configurations.
1N5724
Texas Instruments
1N5724 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. Ideal for applications requiring fast response times and IR detection in through-hole mounting setups.
SFH3401-3
Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Dark Current: 10 nA; Maximum Operating Temperature: 85 Cel;
OP550C
Tt Electronics Plc
OP550C by Tt Electronics Plc is a single phototransistor with a peak wavelength of 930nm. It operates b/w -40°C to 100°C, has a min collector-emitter breakdown voltage of 30V, and features through-hole mounting. Ideal for applications requiring infrared detection in compact spaces.
TPS601A(A,F)
Toshiba
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 4.7 mm; No. of Functions: 1; Configuration: SINGLE; Maximum Power Dissipation: .15 W;
PT91-21B/TR9
Everlight Electronics
The Everlight Electronics PT91-21B/TR9 is a 1.9mm round phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, has a max power dissipation of 0.075W, and can handle an on-state current of 0.02A. Ideal for applications requiring infrared detection in compact spaces with surface mount requirements.
TIL624
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000008 s;
SFH309PFA4
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Response Time: .000007 s; Maximum On State Current: .015 A;
L14C2
Renesas Electronics
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 200 Cel; Maximum Response Time: .000005 s; Maximum Power Dissipation: .6 W; Minimum Operating Temperature: -60 Cel;
SFH3401-2
Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1080;
SFH313FA-3
SFH313FA-3 by Infineon Technologies is a phototransistor with peak wavelength of 870nm. It operates b/w -55°C to 100°C, with max on state current of 0.05A. Ideal for applications requiring through hole mounting and low dark current below 200nA.
PT91-21B/TR10
Everlight Electronics' PT91-21B/TR10 is a 1.9mm round phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and on-state current of 0.02A. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and nominal light current of 1.5mA.
KDT00030
The Onsemi KDT00030 is a single phototransistor with peak wavelength of 630nm. It operates b/w -40 °C to 85°C, with nominal light current of 0.01mA and max dark current of 100nA. Ideal for applications requiring rectangular shape optoelectronic components in compact size.
TIL135
TIL135 by Texas Instruments is a phototransistor with 12 separate elements. It operates in temperatures from -65°C to 125°C, with nominal light current of 2mA and max dark current of 100nA. Ideal for applications requiring IR detection and a min collector-emitter breakdown voltage of 50V.
TPS617-B
PHOTO DARLINGTON; Maximum Dark Current: 250 nA; Additional Features: HIGH SENSITIVITY; SIDE VIEW; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 75 Cel; Nominal Light Current: 1.7 mA;
BPX43-6
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 125 Cel; Maximum Response Time: .000022 s;
TPS612-AB
PHOTO TRANSISTOR; Peak Wavelength (nm): 870; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 20 V; Size: 3 mm;
BPV11
Telefunken Microelectronics
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .0000033 s; Maximum Dark Current: 3 nA; Peak Wavelength (nm): 800;
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VEMT2523SLX01
Vishay Intertechnology's VEMT2523SLX01 is an 850nm peak wavelength phototransistor with a max operating temperature of 100°C. With a nominal light current of 2.7mA and min collector-emitter breakdown voltage of 20V, it is ideal for applications requiring precise light detection in environments ranging from -40°C to 100°C.
VEMT3700-GS08
Vishay Intertechnology's VEMT3700-GS08 is a 2.4mm single phototransistor with peak wavelength of 850nm. Operating b/w -40°C to 100°C, it has a max power dissipation of 0.1W and min collector-emitter breakdown voltage of 70V. Ideal for surface mount applications in infrared range, it offers nominal light current of 0.5mA and max dark current of 200nA.
VEMT2000X01
Vishay Intertechnology's VEMT2000X01 is a 1.8mm round phototransistor with peak wavelength of 860nm. It operates b/w -40°C to 100°C, with max power dissipation of 0.1W and on-state current of 0.05A. Ideal for IR applications due to its infrared range, it is surface mountable and has a min collector-emitter breakdown voltage of 20V.
VEMT4700F-GS08
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 200 nA; Infrared (IR) Range: YES; Maximum On State Current: .05 A; Size: 2.4 mm;
VEMT2023SLX01
VEMT2023SLX01 by Vishay Intertechnology is a single configuration phototransistor with peak wavelength of 860nm. It operates in temperatures ranging from -40°C to 100°C and has a nominal light current of 2.7mA. This optoelectronic component is suitable for applications requiring infrared range detection and a min collector-emitter breakdown voltage of 20V.
VEMT2003X01
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; No. of Functions: 1; Configuration: SINGLE; Packing Method: TR, 13 INCH; Maximum Dark Current: 100 nA;
VEMT2023X01
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 100 nA; Minimum Collector-emitter Breakdown Voltage: 20 V; Peak Wavelength (nm): 860; Infrared (IR) Range: YES;
VEMT2503X01
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Packing Method: TR, 13 INCH; Infrared (IR) Range: YES; Additional Features: AEC-Q101; Nominal Light Current: 2.7 mA;
VEMT2523X01
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Additional Features: AEC-Q101; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 100 nA;
VEMT2500X01
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Shape: ROUND; Infrared (IR) Range: YES; No. of Functions: 1; Nominal Light Current: 6 mA;
VEMT4700-GS08
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Minimum Collector-emitter Breakdown Voltage: 70 V; Additional Features: HIGH SENSITIVITY; Shape: ROUND; Configuration: SINGLE;
VEMT4700-GS18
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Size: 2.4 mm; Peak Wavelength (nm): 850; Additional Features: HIGH SENSITIVITY; Maximum Dark Current: 200 nA;
VEMT3700-GS18
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: .5 mA; Minimum Operating Temperature: -40 Cel; Minimum Collector-emitter Breakdown Voltage: 70 V;
VEMT2020X01
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 100 Cel; No. of Functions: 1; Peak Wavelength (nm): 860;
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