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VEMT4700F-GS08

Vishay Intertechnology

VEMT4700F-GS08 by Vishay Intertechnology

Vishay Intertechnology's VEMT4700F-GS08 is a 2.4mm single phototransistor with peak wavelength of 940nm. It operates b/w -40 to 100°C, has max power dissipation of 0.1W, and collector-emitter breakdown voltage of 70V. Ideal for IR applications with surface mounting feature.

Median Price

$0.096

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 5 parts In-Stock

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$0.096

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5

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Nova Conductors

Japan . 70 parts In-Stock

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$0.304

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Vyrian

USA . 11,817 parts In-Stock

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Rebound Electronics

UK . 4,480 parts In-Stock

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Continental Prestige Electronics

USA . 4,078 parts In-Stock

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$0.304

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$0.298

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Argo Parts USA

USA . 1,907 parts In-Stock

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$0.295

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Netroflash

USA . 1,000 parts In-Stock

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Ampacity Inc.

Singapore . 1,055 parts In-Stock

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$9.100

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AZTECH Wire

Italy . 619 parts In-Stock

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$13.269

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Perfect Parts

USA . 6,720 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Overview

Experience the superior quality and precision of Vishay Intertechnology with the VEMT4700F-GS08 phototransistor. This innovative component offers unmatched reliability and durability, making it ideal for a wide range of applications. From industrial automation to medical devices, this phototransistor delivers exceptional performance in every use case. Trust Vishay Intertechnology to provide you with the best-in-class optoelectronic solutions that exceed your expectations. Elevate your projects with the VEMT4700F-GS08 and experience the difference today.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easier to design and implement in a circuit.

Size: 2.4 mm

Compact size allows for easy integration into small electronic devices.

Peak Wavelength (nm): 940

Peak wavelength of 940nm makes it suitable for applications requiring infrared detection.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor type ensures reliable light sensing capabilities.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for use in a variety of environments.

Shape: ROUND

Round shape provides easy alignment and mounting in circuit designs.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality in cold conditions.

Maximum Power Dissipation: 0.1 W

Low power dissipation helps in energy efficiency and reduces heat generation.

Nominal Light Current: 0.5 mA

Nominal light current of 0.5mA provides reliable light sensitivity.

Maximum Dark Current: 200 nA

Low dark current ensures accurate light sensing and minimal signal interference.

Infrared (IR) Range: YES

Infrared range capability enhances the versatility of the phototransistor for infrared sensing applications.

Minimum Collector-emitter Breakdown Voltage: 70 V

High breakdown voltage provides protection against voltage spikes and ensures durability.

Mounting Feature: SURFACE MOUNT

Surface mount feature simplifies the installation and mounting process.

Maximum On State Current: 0.05 A

Low maximum on-state current helps in preventing overloading and protects the phototransistor.

Technical Specifications

Phototransistors VEMT4700F-GS08 attributes and parameters. Explore more Phototransistors devices from Vishay Intertechnology

Specs

Additional Features:

DAY LIGHT FILTER, HIGH SENSITIVITY

Minimum Collector-emitter Breakdown Voltage:

70 V

Configuration:

SINGLE

Maximum Dark Current:

200 nA

Infrared (IR) Range:

YES

Nominal Light Current:

.5 mA

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.05 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

940

Maximum Power Dissipation:

.1 W

Shape:

ROUND

Size:

2.4 mm

Sub-Category:

Photo Transistors

Trade Compliance

VEMT4700F-GS08 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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