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LS612

Texas Instruments

LS612 by Texas Instruments

LS612 by Texas Instruments is a single phototransistor with max temp of 125°C. It has nominal light current of 2mA and response time of 0.000008s. Ideal for applications requiring IR detection, it features a min breakdown voltage of 50V and through hole mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 15,175 parts In-Stock

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15,175

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Vyrian

USA . 3,808 parts In-Stock

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3,808

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Digiode

USA . 3,504 parts In-Stock

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3,504

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,234 parts In-Stock

1+ parts

$0.650

100+ parts

-

1k+ parts

$1.709

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2,234

$0.650

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$1.709

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DigiPath Technology Company

USA . 2,054 parts In-Stock

1+ parts

$0.715

100+ parts

$0.658

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-

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2,054

$0.715

$0.658

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ChromeModa Solutions

Germany . 4,122 parts In-Stock

1+ parts

$0.730

100+ parts

$0.599

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4,122

$0.730

$0.599

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IDEA Electronic Components Group

UK . 588 parts In-Stock

1+ parts

$0.730

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$0.657

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588

$0.730

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$0.657

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One Stop Electronics

USA . 1,573 parts In-Stock

1+ parts

$7.100

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1,573

$7.100

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AZTECH Wire

Italy . 445 parts In-Stock

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$17.813

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445

$17.813

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Corphita

USA . 1,067 parts In-Stock

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1,067

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Assy Fe

Spain . 25 parts In-Stock

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Overview

Discover the LS612 by Texas Instruments, a high-quality phototransistor offering unparalleled performance and reliability. With a wide temperature range and fast response time, this product is perfect for applications in various industries. From automation to security systems, the LS612 provides excellent value and benefits to customers seeking a dependable optoelectronic solution. Trust in Texas Instruments' renowned reputation for excellence and choose the LS612 for your next project.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate into various circuits and systems.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistors are more sensitive to light compared to photodiodes, providing better performance in light sensing applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this phototransistor can withstand harsh environmental conditions.

Shape: ROUND

Round shape allows for easy and secure mounting in different applications.

Minimum Operating Temperature: -65 °C

Wide temperature range ensures reliable operation in extreme cold environments.

Maximum Power Dissipation: 0.05 W

Low power dissipation helps in minimizing heat generation and energy consumption.

Nominal Light Current: 2 mA

High light current allows for better sensitivity to light variations.

Maximum Dark Current: 25 nA

Low dark current ensures minimal current flow in the absence of light, resulting in accurate light sensing.

Infrared (IR) Range: YES

Capability to detect infrared light adds versatility to the use cases of this phototransistor.

Maximum Response Time: 0.000008 s

Ultra-fast response time enables quick detection and response to changes in light intensity.

Minimum Collector-emitter Breakdown Voltage: 50 V

High breakdown voltage offers protection against voltage spikes and ensures durability.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides secure and reliable connection to circuit boards.

Technical Specifications

Phototransistors LS612 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

2 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

LS612 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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