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LS619

Texas Instruments

LS619 by Texas Instruments

The Texas Instruments LS619 is a single phototransistor with a round shape. It operates in temperatures ranging from -65°C to 125°C and has a max power dissipation of 0.05W. With nominal light current of 9mA, it is suitable for applications requiring fast response times in the infrared range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,908 parts In-Stock

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Digiode

USA . 2,198 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,458 parts In-Stock

1+ parts

$0.095

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$1.455

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1,458

$0.095

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$1.455

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ChromeModa Solutions

Germany . 2,384 parts In-Stock

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$0.107

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$0.088

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2,384

$0.107

$0.088

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IDEA Electronic Components Group

UK . 2,292 parts In-Stock

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$0.107

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$0.096

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2,292

$0.107

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$0.096

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Ampacity Inc.

Singapore . 725 parts In-Stock

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$1.100

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725

$1.100

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AZTECH Wire

Italy . 270 parts In-Stock

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$5.922

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270

$5.922

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One Stop Electronics

USA . 857 parts In-Stock

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$12.100

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857

$12.100

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Semicontronic

India . 298 parts In-Stock

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$15.100

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$14.722

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$14.647

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298

$15.100

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$14.647

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Corphita

USA . 4,770 parts In-Stock

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4,770

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DigiPath Technology Company

USA . 961 parts In-Stock

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$0.096

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961

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Corohmni

South Africa . 256 parts In-Stock

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Overview

Illuminate your projects with the LS619 phototransistor from Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers top-notch components that meet the highest industry standards. The LS619 is a versatile single configuration phototransistor suitable for a wide range of applications. From automatic lighting control to proximity sensors, this tiny yet powerful component offers exceptional value and performance. Trust Texas Instruments to provide you with the best in optoelectronic technology for your next project.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate into a circuit without additional components needed for multiple configurations.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor, it provides high sensitivity to light, making it suitable for light detection applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for use in a wide range of environments without compromising performance.

Shape: ROUND

Round shape provides uniform sensitivity to light from all angles, improving the overall detection accuracy.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures reliable performance even in cold environments.

Maximum Power Dissipation: 0.05 W

Low power dissipation helps in reducing energy consumption and heat generation in the circuit.

Nominal Light Current: 9 mA

High nominal light current indicates strong response to light signals, ensuring accurate detection.

Maximum Dark Current: 25 nA

Low dark current reduces noise interference, leading to precise and reliable light detection.

Infrared (IR) Range: YES

Having an infrared range expands the range of light signals that can be detected, making it versatile for various applications.

Maximum Response Time: 0.000008 s

Ultra-fast response time ensures quick detection and response to light changes, critical for time-sensitive applications.

Minimum Collector-emitter Breakdown Voltage: 50 V

High breakdown voltage provides protection against voltage spikes, enhancing the durability and reliability of the phototransistor.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature simplifies the installation process and ensures secure placement in the circuit.

Technical Specifications

Phototransistors LS619 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

9 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

LS619 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

NSN

5961-01-133-8760, 5961011338760

NIIN

011338760

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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