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L14N1

Renesas Electronics

L14N1 by Renesas Electronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .00001 s; Maximum Dark Current: 100 nA; Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A;

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Digiode

USA . 954 parts In-Stock

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954

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Vyrian

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230

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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36,530

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Supply Digital

USA . 2,844 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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Corphita

USA . 177 parts In-Stock

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Technical Specifications

Phototransistors L14N1 attributes and parameters. Explore more Phototransistors devices from Renesas Electronics

Specs

Maximum Dark Current:

100 nA

Mounting Feature:

Maximum On State Current:

.05 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.6 W

Maximum Response Time:

.00001 s

Sub-Category:

Photo Transistors

Trade Compliance

L14N1 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.A

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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