Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Infineon Technologies' BP103 phototransistor operates b/w -40°C to 80°C with peak wavelength of 850nm. It has a max on-state current of 0.1A and dark current of 100nA, making it ideal for through-hole mounting applications.
Median Price
$2.450
Lifecycle Status
Suppliers In-Stock
11
In-Stock Inventory
1k+
DigiKey
1+ parts
$2.400
100+ parts
$1.334
1k+ parts
$1.101
10k+ parts
$0.966
Mouser Electronics
$1.340
$1.100
$0.999
Distrelec
$1.418
$1.333
-
Newark
$2.610
$1.540
$1.310
$1.210
Element14
$3.490
$1.990
$1.690
Chip1Stop
$3.680
EBV Elektronik
Farnell
$0.865
$0.786
Digiode
$0.707
Vyrian
$0.744
Fibra_Brandt Electronic GMBH
Modulus Dynamics
$0.402
$0.386
$0.370
Native Components
$0.473
$0.454
Northwest PG Solutions
$0.520
$0.459
Corphita
$0.670
Continental Prestige Electronics
$1.810
$0.928
$0.704
Metaverse IC Inc.
Authorized Procurement Solutions
Kepictronics
This peak wavelength of 850nm is suitable for various applications requiring infrared sensing, making this phototransistor versatile.
With a high maximum operating temperature of 80°C, this phototransistor can withstand elevated temperatures, ensuring reliable performance in demanding environments.
The low minimum operating temperature of -40°C allows this phototransistor to function effectively even in cold conditions, increasing its usability across different temperature ranges.
The tin/lead terminal finish provides good solderability, making it easier to connect this phototransistor to a circuit board or other components during assembly.
With a low maximum dark current of 100nA, this phototransistor exhibits minimal leakage current when not illuminated, enhancing its sensitivity in detecting light or infrared signals.
The through-hole mounting feature allows for secure and stable installation of this phototransistor on a PCB or other surfaces, ensuring reliability and durability in various applications.
Capable of handling a maximum on-state current of 0.1A, this phototransistor can effectively respond to high-intensity light or infrared signals, making it suitable for applications requiring a fast and reliable response.
Phototransistors BP103 attributes and parameters. Explore more Phototransistors devices from Infineon Technologies
Maximum Dark Current:
JESD-609 Code:
Mounting Feature:
Maximum On State Current:
Maximum Operating Temperature:
Minimum Operating Temperature:
Peak Wavelength (nm):
Sub-Category:
Terminal Finish:
BP103 Optoelectronics trade compliance attributes, and parameters.
NSN
3030-01-414-1792, 3030014141792
NIIN
014141792
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
1N4148
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMBJ18CA
Synsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Cristek Interconnects
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;
MMBT2222ALT1G
Onsemi
MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
NE555DR
Texas Instruments
NE555DR by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating voltage of 5V, and power supplies ranging from 5-15V. It is a versatile component for pulse generation applications due to its small outline package and commercial temperature grade suitability.
2N2222A
Bharat Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
OHN3140U
Tt Electronics Plc
OHN3140U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 2mT. It features an output range of 25mA and operates b/w -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields in various industries.
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
FDN306P
FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.
Wuxi Xuyang Electronic
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
OHN3020U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
LM107H
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
Changzhou Galaxy Century Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/56-351
Itt Cannon
CONNECTOR ACCESSORY; MIL Conformity: YES; Terminal Type: WIRE; IEC Conformity: NO; Alternate Contact Sources: ITT CANNON; Associated Military - Specifications: MIL-C-38999;
Infineon Technologies
Esterline Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Option-1: HOLE .115-.125; Mounting Type: CABLE AND PANEL; Mating Contact Finish: NOT SPECIFIED;
LM107H/883C
LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.
TPS617-B
Toshiba
PHOTO DARLINGTON; Maximum Dark Current: 250 nA; Additional Features: HIGH SENSITIVITY; SIDE VIEW; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 75 Cel; Nominal Light Current: 1.7 mA;
TEPT5600
Vishay Intertechnology
TEPT5600 by Vishay Intertechnology is a 5mm round phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, has a collector-emitter breakdown voltage of 6V, and can handle max on state current of 0.02A. Ideal for optoelectronic applications requiring precise light detection in various environments.
ASDL-6771-C41
Broadcom
PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Minimum Operating Temperature: -40 Cel; Shape: ROUND; Size: 1.6 mm; No. of Functions: 1;
TEPT4400
TEPT4400 by Vishay Intertechnology is a 3mm round phototransistor with peak wavelength of 570nm. It has max operating temp of 85°C, min operating temp of -40°C, and max power dissipation of 0.1W. Ideal for optoelectronic applications requiring a single photo transistor configuration.
SFH325-Z
Osram Opto Semiconductors
The Osram Opto Semiconductors SFH325-Z is a single phototransistor with a peak wavelength of 980nm. It operates b/w -40°C to 100°C, has a min collector-emitter breakdown voltage of 35V, and features an optoelectronic type of PHOTO TRANSISTOR. Ideal for applications requiring infrared detection and light current up to 0.016mA.
SFH3711
Osram Opto Semiconductors' SFH3711 is a single phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 100°C, with max on state current of 0.02A. Ideal for surface mount applications in optoelectronics due to its small size (0.29mm) and nominal light current of 0.0017mA.
SFH313-3
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0;
BPX84
Infineon's BPX84 phototransistor operates b/w -40°C to 85°C with max dark current of 200nA. It has a fast response time of 0.000008s and features tin/lead terminal finish. Ideal for through hole mounting, it is commonly used in light sensing applications.
SFH309-5
Infineon's SFH309-5 phototransistor operates in -55 to 100°C range with peak wavelength of 860nm. It has max power dissipation of 0.165W, on-state current of 0.015A, and response time of 0.000008s. Ideal for applications requiring precise light detection like industrial automation and optical sensors.
BPX43
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 300 nA; Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0;
ST-325
Kodenshi
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Power Dissipation: .075 W; Maximum On State Current: .02 A; Maximum Dark Current: 100 nA;
SFH317-2
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000015 s; Maximum Operating Temperature: 100 Cel; Maximum Power Dissipation: .2 W;
TPS608A-A
PHOTO TRANSISTOR; Minimum Operating Temperature: -25 Cel; Configuration: SINGLE; Maximum Operating Temperature: 85 Cel; Size: 1.5 mm; Peak Wavelength (nm): 820;
TPS607A-B
PHOTO DARLINGTON; Shape: ROUND; Minimum Operating Temperature: -25 Cel; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1;
SFH309PFA2
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000005 s; Maximum On State Current: .015 A; Minimum Operating Temperature: -55 Cel;
SPS181C
SPS181C by Onsemi is a phototransistor with peak wavelength of 880nm. It operates b/w -20 °C to 75°C, dissipating max power of 0.07W. With max on state current of 0.02A and dark current at 200nA, it's ideal for through hole mounting in various applications.
VEMT2523SLX01
Vishay Intertechnology's VEMT2523SLX01 is an 850nm peak wavelength phototransistor with a max operating temperature of 100°C. With a nominal light current of 2.7mA and min collector-emitter breakdown voltage of 20V, it is ideal for applications requiring precise light detection in environments ranging from -40°C to 100°C.
SFH309P4
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000007 s; Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0;
SFH320-3/4-Z
PHOTO TRANSISTOR;
TPS604
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); No. of Functions: 1; Shape: ROUND; Maximum Dark Current: 200 nA;
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BP103-2
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .1 A; Peak Wavelength (nm): 850; Minimum Operating Temperature: -40 Cel;
BP103-3
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 100 nA; Maximum On State Current: .1 A; Maximum Power Dissipation: .3 W;
BP103-4
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .1 A; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 85 Cel;
BP103-5
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Power Dissipation: .3 W; Maximum Dark Current: 100 nA;
BP103-6
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .1 A; Maximum Power Dissipation: .3 W;
BP103B2
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Response Time: .0000075 s; Minimum Operating Temperature: -55 Cel;
BP103B3
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 850;
BP103B4
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00001 s; Maximum On State Current: .05 A; Minimum Operating Temperature: -55 Cel;
BP103BF2
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Minimum Operating Temperature: -55 Cel; Maximum Response Time: .0000075 s;
BP103BF3
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Response Time: .00001 s; JESD-609 Code: e0;
BP103BF4
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Maximum Dark Current: 100 nA; Maximum On State Current: .05 A;
Siemens
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 50 V; Infrared (IR) Range: YES; Maximum Operating Temperature: 80 Cel;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 80 Cel; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 50 V;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); No. of Functions: 1; Size: 4.2 mm; Peak Wavelength (nm): 850;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 50 V; Shape: ROUND; Maximum On State Current: .1 A;
PHOTO TRANSISTOR; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; JESD-609 Code: e0; Shape: ROUND; Configuration: SINGLE;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin (Sn) - with Nickel (Ni) barrier; Maximum Dark Current: 100 nA; Maximum On State Current: .1 A; Minimum Operating Temperature: -40 Cel;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN OVER NICKEL; Peak Wavelength (nm): 850; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 50 V;
BP103
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin (Sn); Nominal Light Current: .08 mA; Shape: ROUND; Maximum Dark Current: 50 nA;
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