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SFH320-4

Infineon Technologies

SFH320-4 by Infineon Technologies

SFH320-4 by Infineon Technologies is a single phototransistor with peak wavelength of 860nm. It operates b/w -40 to 100°C, has a response time of 0.000008s, and can handle max power dissipation of 0.165W. Ideal for applications requiring IR detection in compact spaces due to its small size of 2.4mm and surface mounting feature.

Median Price

$0.436

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 6,527 parts In-Stock

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$0.700

100+ parts

$0.347

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$0.256

10k+ parts

$0.199

6,527

$0.700

$0.347

$0.256

$0.199

Arrow

USA . 20,000 parts In-Stock

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$0.173

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$0.173

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Vyrian

USA . 361 parts In-Stock

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$0.173

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361

$0.173

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American Microsemiconductor Inc.

USA . 1,837 parts In-Stock

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$0.390

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$0.390

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Digiode

USA . 305 parts In-Stock

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$0.760

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Rutronik

Germany . 4,000 parts In-Stock

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$0.208

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Pegasus Components GmbH

Germany . 3,927 parts In-Stock

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Prism Electronics

USA . 3,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,995 parts In-Stock

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Zilex Electronics Inc.

Canada . 2,957 parts In-Stock

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Holdelec - ElecDif-Pro

France . 2,000 parts In-Stock

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Rebound Electronics

UK . 1,798 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 229 parts In-Stock

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Modulus Dynamics

Lithuania . 1,926 parts In-Stock

1+ parts

$0.434

100+ parts

$0.417

1k+ parts

$0.399

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Component Stockers USA

USA . 8,750 parts In-Stock

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$0.700

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$0.300

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$0.230

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Corphita

USA . 359 parts In-Stock

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$0.720

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Perfect Parts

USA . 14,592 parts In-Stock

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Kepictronics

USA . 9,878 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Overview

Discover the Infineon Technologies SFH320-4, a top-quality phototransistor designed to meet your needs with precision and reliability. With a peak wavelength of 860nm, this photo transistor offers exceptional performance in a variety of applications. From industrial automation to consumer electronics, the SFH320-4 delivers consistent results in challenging environments. Trust Infineon Technologies for cutting-edge technology and superior manufacturing standards. Upgrade to the SFH320-4 today and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easy setup and integration into systems.

Size: 2.4 mm

Compact size makes it suitable for applications where space is limited.

Peak Wavelength (nm): 860

Peak wavelength of 860 nm makes it ideal for applications requiring sensitivity in the infrared range.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor technology offers high sensitivity and quick response times.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for use in various environments.

Shape: ROUND

Round shape simplifies mounting and alignment in applications.

Minimum Operating Temperature: -40 °C

Wide operating temperature range enables use in extreme conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures reliable connections.

Maximum Power Dissipation: 0.165 W

High maximum power dissipation allows for handling of peak loads.

Nominal Light Current: 1 mA

Nominal light current of 1 mA provides a baseline for operating in varying light conditions.

Maximum Dark Current: 200 nA

Low dark current minimizes noise levels when no light is present.

Infrared (IR) Range: YES

Infrared range capability expands the range of applications the phototransistor can be used in.

Maximum Response Time: 0.000008 s

Ultra-fast maximum response time ensures rapid detection and data acquisition.

Minimum Collector-emitter Breakdown Voltage: 35 V

High breakdown voltage provides protection against voltage spikes.

Mounting Feature: SURFACE MOUNT

Surface mount feature simplifies installation on PCBs or other surfaces.

Maximum On State Current: 0.015 A

High maximum on-state current allows for handling of peak current demands.

Technical Specifications

Phototransistors SFH320-4 attributes and parameters. Explore more Phototransistors devices from Infineon Technologies

Specs

Minimum Collector-emitter Breakdown Voltage:

35 V

Configuration:

SINGLE

Maximum Dark Current:

200 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e0

Nominal Light Current:

1 mA

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.015 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

860

Maximum Power Dissipation:

.165 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Size:

2.4 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Trade Compliance

SFH320-4 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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