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TEFT4300

Vishay Intertechnology

TEFT4300 by Vishay Intertechnology

TEFT4300 by Vishay Intertechnology is a 3mm phototransistor with peak wavelength of 925nm. It operates b/w -40 to 100°C, with max power dissipation of 0.185W and response time of 0.0000023s. Ideal for applications requiring IR detection in through-hole mounting configurations.

Median Price

$0.256

Lifecycle Status

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Newark

USA . 42,745 parts In-Stock

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Arrow

USA . 2,855 parts In-Stock

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Adafruit Industries

USA . 500 parts In-Stock

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$0.242

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$0.281

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Mouser Electronics

USA . 6,099 parts In-Stock

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DigiKey

USA . 5,497 parts In-Stock

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$0.670

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Farnell

UK . 27,321 parts In-Stock

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Element14

Singapore . 27,321 parts In-Stock

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TTI Europe

Germany . 5,000 parts In-Stock

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Verical

USA . 4,318 parts In-Stock

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TTI

USA . 1,000 parts In-Stock

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Chip1Stop

Japan . 560 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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TME

Poland . 4,318 parts In-Stock

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$0.550

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$0.293

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$0.228

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$0.206

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IBS Electronics

USA . 64,000 parts In-Stock

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NAC Semi

USA . 42,000 parts In-Stock

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Vyrian

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Rutronik

Germany . 3,000 parts In-Stock

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Bristol Electronics

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ACDS - Activité Composants Distribution Service

France . 995 parts In-Stock

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LIBRA Elektronik GmbH

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Holdelec - ElecDif-Pro

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Semicontronic

India . 11,352 parts In-Stock

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Corohmni

South Africa . 117 parts In-Stock

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Component Stockers USA

USA . 4,220,356 parts In-Stock

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Argo Parts USA

USA . 4,917 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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Aztec Data Supply Inc.

USA . 10,194 parts In-Stock

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Continental Prestige Electronics

USA . 54,801 parts In-Stock

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GreenTree Electronics

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Perfect Parts

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Authorized Procurement Solutions

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Futuretech Components

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Kepictronics

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iodParts Technologies Inc.

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Glotronic Ltd.

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Cyclops Electronics Ltd (Excess)

UK . 995 parts In-Stock

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Assy Fe

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Overview

Discover the cutting-edge TEFT4300 phototransistor by Vishay Intertechnology, designed to deliver unparalleled quality and reliability. With a peak wavelength of 925nm and quick response time, this product is perfect for applications requiring precise light detection. Whether it's in automotive sensors, medical devices, or industrial automation, the TEFT4300 offers unmatched performance and durability. Trust Vishay Intertechnology for top-of-the-line optoelectronic solutions that bring value and innovation to your projects.

Feature Benefit Bullets

Configuration: SINGLE

SINGLE configuration makes it easy to use and integrate into various circuits.

Size: 3 mm

Compact size allows for easy placement in different devices or applications.

Peak Wavelength (nm): 925

Ideal peak wavelength for capturing specific light frequencies effectively.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor, it offers high sensitivity to light, making it suitable for light detection applications.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for reliable performance in various environmental conditions.

Shape: ROUND

Round shape simplifies mounting and ensures uniform light capture from all angles.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature enables usage in cold environments without performance issues.

Terminal Finish: TIN SILVER

TIN SILVER finish enhances conductivity and durability of the terminals.

Maximum Power Dissipation: 0.185 W

Efficient power dissipation capability ensures the component remains cool during operation.

Nominal Light Current: 3.2 mA

Nominal light current rating indicates good sensitivity to light sources.

Maximum Dark Current: 200 nA

Low dark current ensures accurate light detection even in low light conditions.

Infrared (IR) Range: YES

Infrared range compatibility expands the range of applications where the phototransistor can be used.

Maximum Response Time: 0.0000023 s

Ultra-fast response time allows for quick detection and reaction to light changes.

Minimum Collector-emitter Breakdown Voltage: 70 V

High breakdown voltage provides protection against voltage spikes or surges.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature simplifies the installation process on PCBs or other surfaces.

Maximum On State Current: 0.05 A

High maximum on-state current capability allows for handling larger current loads.

Technical Specifications

Phototransistors TEFT4300 attributes and parameters. Explore more Phototransistors devices from Vishay Intertechnology

Specs

Additional Features:

DAY LIGHT FILTER, HIGH SENSITIVITY

Minimum Collector-emitter Breakdown Voltage:

70 V

Configuration:

SINGLE

Maximum Dark Current:

200 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e2

Nominal Light Current:

3.2 mA

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.05 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

925

Maximum Power Dissipation:

.185 W

Maximum Response Time:

.0000023 s

Shape:

ROUND

Size:

3 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Trade Compliance

TEFT4300 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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