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TIL415

Texas Instruments

TIL415 by Texas Instruments

TIL415 by Texas Instruments is a phototransistor with peak wavelength of 930nm. It operates b/w -40°C to 85°C, dissipating max power of 0.05W. With fast response time of 0.000025s and max on state current of 0.0001A, it's ideal for light sensing applications.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,000 parts In-Stock

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Digiode

USA . 954 parts In-Stock

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Ampacity Inc.

Singapore . 863 parts In-Stock

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$0.100

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863

$0.100

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Parana Technologies

USA . 1,546 parts In-Stock

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$0.488

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$1.620

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DigiPath Technology Company

USA . 107 parts In-Stock

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$0.537

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$0.494

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107

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ChromeModa Solutions

Germany . 3,515 parts In-Stock

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$0.548

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$0.449

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IDEA Electronic Components Group

UK . 411 parts In-Stock

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$0.493

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One Stop Electronics

USA . 1,457 parts In-Stock

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$8.100

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Semicontronic

India . 1,273 parts In-Stock

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$7.898

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$7.857

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AZTECH Wire

Italy . 479 parts In-Stock

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Corphita

USA . 4,730 parts In-Stock

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Corohmni

South Africa . 373 parts In-Stock

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Overview

Discover the power of innovation with the TIL415 phototransistor by Texas Instruments. Designed with precision and reliability in mind, this versatile component offers peak performance at a wide range of temperatures. From sensing applications to light detection, the TIL415 delivers unparalleled sensitivity and response time, making it a valuable asset for any project. Trust Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Peak Wavelength: 930 nm

This specific wavelength is ideal for various photodetection applications such as remote controls, sensors, and fiber optic communication, ensuring accurate detection and reliable performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this phototransistor can withstand extreme environmental conditions, making it suitable for industrial and automotive applications where temperature fluctuations are common.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this phototransistor to function effectively in cold environments, expanding its usability in a wide range of applications including refrigeration monitoring and cold storage systems.

Maximum Power Dissipation: 0.05 W

The low power dissipation of this phototransistor ensures energy efficiency and prevents overheating, making it a reliable choice for long-term use in power-sensitive applications.

Maximum Dark Current: 100 nA

The extremely low dark current minimizes background noise and increases the signal-to-noise ratio, enabling precise detection of low-intensity light signals and improving overall system accuracy.

Maximum Response Time: 0.000025 s

The fast response time of this phototransistor allows for quick detection and communication of light signals, making it suitable for high-speed applications such as optical communication systems and barcode readers.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process, providing secure and stable mounting for the phototransistor in various electronic devices and equipment.

Maximum On State Current: 0.0001 A

With a low on-state current, this phototransistor minimizes power consumption and reduces heat generation, making it an efficient choice for battery-operated devices and applications requiring low power consumption.

Technical Specifications

Phototransistors TIL415 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

100 nA

Mounting Feature:

Maximum On State Current:

.0001 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Peak Wavelength (nm):

930

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000025 s

Sub-Category:

Photo Transistors

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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