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SPS103C

Onsemi

SPS103C by Onsemi

The Onsemi SPS103C is a phototransistor with peak wavelength of 900nm, max temp of 100 °C, and dark current of 100nA. Ideal for applications requiring through hole mounting, it has a max power dissipation of 0.05W and on-state current of 0.02A.

Median Price

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Lifecycle Status

Suppliers In-Stock

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1k+

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Digiode

USA . 1,812 parts In-Stock

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Vyrian

USA . 1,348 parts In-Stock

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TANS Electronics

Latvia . 6,745 parts In-Stock

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SupplyDigital Components

Austria . 4,890 parts In-Stock

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Problanco Electronics

Mexico . 3,283 parts In-Stock

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Kulean Microsystems

USA . 3,220 parts In-Stock

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Corphita

USA . 544 parts In-Stock

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UHIMA Technologies

Türkiye . 167 parts In-Stock

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Corohmni

South Africa . 119 parts In-Stock

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Overview

Enhance your projects with the high-quality SPS103C phototransistor by Onsemi! With a peak wavelength of 900nm and maximum operating temperature of 100 °C, this versatile component is perfect for a wide range of applications. Whether you're designing sensor circuits, light barriers, or optical control systems, the SPS103C delivers reliable performance and precise detection. Trust in Onsemi's expertise and innovation to bring value and efficiency to your projects. Upgrade your designs today with the SPS103C and experience the benefits of superior quality and functionality!

Feature Benefit Bullets

Peak Wavelength (nm): 900

The peak wavelength of 900nm makes this phototransistor suitable for applications requiring sensitivity to infrared light, such as remote controls or proximity sensors.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature of 100 °C, this phototransistor can be used in a wide range of environments without risk of overheating, ensuring reliable performance.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C allows this phototransistor to function effectively even in cold conditions, making it versatile for various operating environments.

Maximum Power Dissipation: 0.05 W

The low maximum power dissipation of 0.05W helps in ensuring the efficiency and longevity of the phototransistor by preventing overheating and excess energy consumption.

Maximum Dark Current: 100 nA

The low maximum dark current of 100nA results in minimal noise and accurate signal sensing in low-light conditions, making this phototransistor suitable for light detection applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature provides ease of installation and secure placement, making it convenient for integration into various electronic circuits and devices.

Maximum On State Current: 0.02 A

With a maximum on-state current of 0.02A, this phototransistor can handle high current loads, making it suitable for applications requiring reliable switching and amplification of light signals.

Technical Specifications

Phototransistors SPS103C attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Maximum Dark Current:

100 nA

Mounting Feature:

Maximum On State Current:

.02 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Sub-Category:

Photo Transistors

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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