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SFH325-3

Infineon Technologies

SFH325-3 by Infineon Technologies

SFH325-3 by Infineon Technologies is a single phototransistor with peak wavelength of 860nm. It operates b/w -40 to 100°C, has max power dissipation of 0.165W, and response time of 0.000007s. Ideal for applications requiring IR detection in compact spaces due to its small size (2.4mm) and round shape.

Median Price

$0.710

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,983 parts In-Stock

1+ parts

$0.710

100+ parts

$0.357

1k+ parts

$0.279

10k+ parts

$0.201

3,983

$0.710

$0.357

$0.279

$0.201

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 476 parts In-Stock

1+ parts

$0.770

100+ parts

-

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476

$0.770

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Vyrian

USA . 182 parts In-Stock

1+ parts

$0.810

100+ parts

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182

$0.810

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ComSIT Distribution GmbH

Germany . 71,200 parts In-Stock

1+ parts

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71,200

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Rutronik

Germany . 10,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.265

10,000

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$0.265

Bristol Electronics

USA . 1,900 parts In-Stock

1+ parts

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1,900

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GES GmbH

Germany . 26 parts In-Stock

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26

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 7,548 parts In-Stock

1+ parts

$0.411

100+ parts

$0.395

1k+ parts

$0.378

10k+ parts

-

7,548

$0.411

$0.395

$0.378

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Component Stockers USA

USA . 2,851 parts In-Stock

1+ parts

$0.710

100+ parts

$0.300

1k+ parts

$0.240

10k+ parts

-

2,851

$0.710

$0.300

$0.240

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Corphita

USA . 240 parts In-Stock

1+ parts

$0.729

100+ parts

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240

$0.729

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Overview

Unlock the potential of your optoelectronic projects with the SFH325-3 phototransistor from Infineon Technologies. Known for their superior quality and reliability, Infineon Technologies delivers cutting-edge components that exceed industry standards. The SFH325-3 is perfect for a wide range of applications, offering precision and performance in a compact 2.4mm size. With a peak wavelength of 860nm and maximum response time of 0.000007s, this phototransistor provides unparalleled sensitivity and speed. Trust Infineon Technologies to take your projects to the next level with the SFH325-3 phototransistor.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate into various electronic devices and circuits.

Size: 2.4 mm

Compact size allows for easy installation in small spaces or on PCBs.

Peak Wavelength (nm): 860

Peak sensitivity at 860nm makes it ideal for applications requiring detection in the infrared spectrum.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistors offer high sensitivity to light, making them suitable for light detection and sensing applications.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for use in harsh environments without risking damage.

Shape: ROUND

Round shape provides a uniform detection area for consistent performance.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures reliable operation even in extreme cold conditions.

Maximum Power Dissipation: 0.165 W

Low power dissipation helps in reducing energy consumption and heat generation.

Nominal Light Current: 0.65 mA

Optimal nominal light current ensures accurate sensing and detection of light.

Maximum Dark Current: 200 nA

Low dark current ensures minimal signal noise and improved signal-to-noise ratio.

Infrared (IR) Range: YES

Support for infrared range makes it suitable for applications requiring detection in this spectrum.

Maximum Response Time: 0.000007 s

Ultra-fast response time allows for quick detection and response to changes in light levels.

Minimum Collector-emitter Breakdown Voltage: 35 V

High breakdown voltage ensures protection against voltage spikes and surges.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting makes it easy to securely attach the phototransistor to a PCB or enclosure.

Maximum On State Current: 0.015 A

High maximum on-state current allows for handling larger loads or signals.

Technical Specifications

Phototransistors SFH325-3 attributes and parameters. Explore more Phototransistors devices from Infineon Technologies

Specs

Minimum Collector-emitter Breakdown Voltage:

35 V

Configuration:

SINGLE

Maximum Dark Current:

200 nA

Infrared (IR) Range:

YES

Nominal Light Current:

.65 mA

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.015 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

860

Maximum Power Dissipation:

.165 W

Maximum Response Time:

.000007 s

Shape:

ROUND

Size:

2.4 mm

Sub-Category:

Photo Transistors

Trade Compliance

SFH325-3 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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