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PT100MF0MP

Sharp Corporation

PT100MF0MP by Sharp Corporation

PT100MF0MP by Sharp Corporation is a 1.6mm round phototransistor with a peak wavelength of 910nm. It operates in temperatures ranging from -30°C to 85°C and has a min collector-emitter breakdown voltage of 35V. This phototransistor is commonly used for optoelectronic applications requiring infrared detection.

Median Price

$0.400

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DigiKey

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$0.328

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$0.276

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Mouser Electronics

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$0.820

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$0.264

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Avnet

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Arrow

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Verical

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Nova Conductors

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SIE Connect GmbH - GreenChips

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NAC Semi

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Argo Parts USA

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Netroflash

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Continental Prestige Electronics

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South Africa . 1,020 parts In-Stock

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$0.671

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Andel Nordic

Denmark . 387 parts In-Stock

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$1.443

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$1.385

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Overview

Discover the PT100MF0MP by Sharp Corporation, a remarkable phototransistor that exceeds expectations in quality and performance. Backed by Sharp's renowned reputation for excellence, this phototransistor offers numerous advantages for a variety of applications. With its compact size and optoelectronic technology, it delivers exceptional sensitivity and accuracy. Its unique design ensures reliable operation even in extreme temperatures, making it an ideal choice for demanding environments. Experience the value and benefits this product brings, from its precise light detection capabilities to its durable construction. Trust in Sharp to provide you with a superior solution that surpasses all expectations.

Feature Benefit Bullets

Configuration: SINGLE

The single configuration allows for a simplified setup and efficient use of space in applications where only one function is required, making it ideal for compact designs.

Size: 1.6 mm

With a small size of 1.6 mm, this phototransistor can be easily integrated into various devices or systems without occupying much space, providing flexibility in design.

No. of Functions: 1

Having a single function simplifies the circuit design and operation, making it easier to implement and reducing the risk of errors or complications in applications.

Peak Wavelength (nm): 910

The phototransistor's peak wavelength of 910 nm offers excellent sensitivity to light in the infrared spectrum, ensuring accurate detection and measurement of infrared signals, making it ideal for infrared applications.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor, it provides a high level of sensitivity and reliability in converting light energy into electrical signals, making it suitable for various optoelectronic applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this phototransistor can withstand high-temperature environments, ensuring reliable performance even in challenging conditions.

Shape: ROUND

The round shape of this phototransistor allows for easy mounting and alignment, simplifying the assembly process and enhancing overall compatibility with a variety of systems.

Minimum Operating Temperature: -30 °C

With a minimum operating temperature of -30 °C, this phototransistor remains functional in low-temperature environments, making it suitable for use in various temperature-sensitive applications.

Terminal Finish: Gold (Au)

The gold terminal finish ensures excellent conductivity and corrosion resistance, enhancing the connection reliability and extending the product's lifespan.

Nominal Light Current: 2 mA

The phototransistor's nominal light current of 2 mA indicates its ability to handle a significant amount of light energy, allowing for precise light detection and accurate signal generation.

Maximum Dark Current: 100 nA

With a maximum dark current of 100 nA, this phototransistor exhibits low leakage current in the absence of light, ensuring reliable operation and minimal signal interference.

Infrared (IR) Range: YES

The inclusion of an infrared (IR) range expands the potential applications of this phototransistor, enabling it to detect and respond to infrared signals in various fields.

Minimum Collector-emitter Breakdown Voltage: 35 V

The minimum collector-emitter breakdown voltage of 35 V ensures the phototransistor's ability to handle high voltage levels, providing enhanced protection and reliability in demanding applications.

Technical Specifications

Phototransistors PT100MF0MP attributes and parameters. Explore more Phototransistors devices from Sharp Corporation

Specs

Minimum Collector-emitter Breakdown Voltage:

35 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e4

Nominal Light Current:

2 mA

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Optoelectronic Type:

Peak Wavelength (nm):

910

Shape:

ROUND

Size:

1.6 mm

Terminal Finish:

Trade Compliance

PT100MF0MP Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

PCN

Manufacturer Highlights

Sharp Corporation

Sharp Corp is a Japan-based company that is principally engaged in producing and selling a broad range of consumer and industrial electronic products. The company's business segments consist of the consumer electronics segment, the energy solutions segment, the business solutions segment, the electronic components and devices segment, and the display devices segment. The company generates over half of its revenue from the consumer electronics segment and the display devices segment. It has a global business presence, with China, Japan, the Americas, and Europe its four largest markets.

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