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QTLP610CPD

Onsemi

QTLP610CPD by Onsemi

The Onsemi QTLP610CPD is a single phototransistor with peak wavelength of 860nm. It operates b/w -25 °C to 85°C, with min collector-emitter breakdown voltage of 30V. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2mm.

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Digiode

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Component Stockers USA

USA . 607 parts In-Stock

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Kepictronics

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

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Corphita

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UHIMA Technologies

Türkiye . 890 parts In-Stock

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Corohmni

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Problanco Electronics

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Overview

Enhance your electronic projects with the high-quality QTLP610CPD phototransistor from Onsemi. Designed for precision and reliability, this phototransistor offers exceptional performance in a compact 2mm size. Ideal for applications requiring accurate light detection, such as proximity sensors and ambient light sensing, the QTLP610CPD provides a nominal light current of 0.5mA and an impressive minimum collector-emitter breakdown voltage of 30V. Trust in Onsemi's reputation for excellence and choose the QTLP610CPD for all your optoelectronic needs.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easy integration into various circuits and systems, making this product versatile and compatible with a wide range of applications.

Size: 2 mm

Compact size enables this phototransistor to be used in space-constrained environments while still providing reliable performance.

Peak Wavelength (nm): 860

Peak wavelength of 860nm makes this phototransistor ideal for applications requiring detection and sensing in the near-infrared spectrum.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor makes this product more sensitive to light compared to regular photodiodes, offering improved performance in light detection applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85 °C ensures the phototransistor can withstand elevated temperatures without compromising functionality, increasing its durability.

Shape: RECTANGULAR

Rectangular shape allows for easier alignment and mounting, simplifying the installation process and enhancing the overall usability of the product.

Minimum Operating Temperature: -25 °C

Low minimum operating temperature of -25 °C means this phototransistor can perform reliably even in cold environments, making it suitable for a wide range of temperature conditions.

Nominal Light Current: 0.5 mA

Nominal light current of 0.5 mA indicates the phototransistor can accurately detect and respond to varying light levels, ensuring precise and efficient light sensing capabilities.

Maximum Dark Current: 100 nA

Low maximum dark current of 100 nA results in minimal noise and improved signal-to-noise ratio, enhancing the accuracy and reliability of light detection in low light conditions.

Infrared (IR) Range: YES

Inclusion of infrared (IR) range capabilities allows this phototransistor to detect and respond to infrared light, expanding its range of applications to include infrared sensing applications.

Minimum Collector-emitter Breakdown Voltage: 30 V

High minimum collector-emitter breakdown voltage of 30 V provides increased protection against voltage spikes and overloads, ensuring the longevity and reliability of the phototransistor in demanding environments.

Technical Specifications

Phototransistors QTLP610CPD attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

Nominal Light Current:

.5 mA

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Peak Wavelength (nm):

860

Shape:

RECTANGULAR

Size:

2 mm

Trade Compliance

QTLP610CPD Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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