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SFH325FA-4

Infineon Technologies

SFH325FA-4 by Infineon Technologies

SFH325FA-4 by Infineon Technologies is a single phototransistor with a peak wavelength of 900nm. It operates b/w -40 to 100°C, has a response time of 0.000008s, and can handle a max power dissipation of 0.165W. Ideal for applications requiring fast light detection in compact spaces.

Median Price

$0.176

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,419 parts In-Stock

1+ parts

$0.710

100+ parts

$0.357

1k+ parts

$0.279

10k+ parts

$0.228

3,419

$0.710

$0.357

$0.279

$0.228

Arrow

USA . 2,000 parts In-Stock

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$0.176

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Verical

USA . 2,000 parts In-Stock

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$0.176

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$0.176

Distributors (In-Stock)

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Vyrian

USA . 889 parts In-Stock

1+ parts

$0.215

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889

$0.215

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Digiode

USA . 344 parts In-Stock

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$0.855

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344

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ACDS - Activité Composants Distribution Service

France . 2,580 parts In-Stock

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Euro-Tech

UK . 2,000 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 5,173 parts In-Stock

1+ parts

$0.050

100+ parts

$0.048

1k+ parts

$0.046

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5,173

$0.050

$0.048

$0.046

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Corphita

USA . 81 parts In-Stock

1+ parts

$0.810

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Perfect Parts

USA . 5,779 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,580 parts In-Stock

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2,580

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Glotronic Ltd.

UK . 2,064 parts In-Stock

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Metaverse IC Inc.

Canada . 2,000 parts In-Stock

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Overview

Discover the SFH325FA-4 by Infineon Technologies, a top-quality phototransistor designed to deliver superior performance and reliability. Manufactured by Infineon Technologies, a trusted name in the industry, this phototransistor offers unmatched precision and efficiency for a wide range of applications. With its compact size and impressive peak wavelength of 900nm, the SFH325FA-4 is perfect for projects where accuracy and speed are critical. Experience the value and benefits of this high-quality product today and take your project to the next level with the SFH325FA-4.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easier integration into electronic circuits.

Size: 2.4 mm

Compact size makes it suitable for applications where space is limited.

Peak Wavelength (nm): 900

Peak wavelength of 900 nm allows for precise sensing in the near-infrared spectrum.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor type offers high sensitivity to light, making it ideal for light detection applications.

Maximum Operating Temperature: 100 °C

High maximum operating temperature ensures reliable performance in varying environmental conditions.

Shape: ROUND

Round shape simplifies mounting and alignment in applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in extreme cold environments.

Maximum Power Dissipation: 0.165 W

High maximum power dissipation capability ensures durability under high power conditions.

Nominal Light Current: 1 mA

Nominal light current of 1 mA indicates high sensitivity to light.

Maximum Dark Current: 200 nA

Low maximum dark current results in minimal signal noise in low-light conditions.

Infrared (IR) Range: YES

Infrared range capability allows for detection of IR light, expanding the range of applications.

Maximum Response Time: 0.000008 s

Fast response time enables real-time detection and control in dynamic environments.

Minimum Collector-emitter Breakdown Voltage: 35 V

High minimum breakdown voltage provides protection against voltage surges and spikes.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature simplifies installation and ensures secure attachment.

Maximum On State Current: 0.015 A

High maximum on-state current allows for efficient switching and control of higher currents.

Technical Specifications

Phototransistors SFH325FA-4 attributes and parameters. Explore more Phototransistors devices from Infineon Technologies

Specs

Minimum Collector-emitter Breakdown Voltage:

35 V

Configuration:

SINGLE

Maximum Dark Current:

200 nA

Infrared (IR) Range:

YES

Nominal Light Current:

1 mA

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.015 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.165 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Size:

2.4 mm

Sub-Category:

Photo Transistors

Trade Compliance

SFH325FA-4 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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