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PT481FE0000F

Sharp Corporation

PT481FE0000F by Sharp Corporation

Sharp Corporation's PT481FE0000F is a 1.6mm PHOTO DARLINGTON phototransistor with peak wavelength of 860nm. Operating b/w -25°C to 85°C, it has a min collector-emitter breakdown voltage of 35V. Ideal for applications requiring infrared detection and light current up to 0.9mA.

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Overview

Experience superior performance with the PT481FE0000F by Sharp Corporation. As a leader in the industry, Sharp delivers phototransistors of the highest quality, offering customers reliability and precision. Ideal for a wide range of applications, this photo Darlington optoelectronic component provides exceptional sensitivity in capturing light, making it perfect for use in sensors, detectors, and optical communication devices. Trust Sharp to exceed your expectations with the PT481FE0000F.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate into various electronic devices and systems.

Size: 1.6 mm

Compact size allows for space-efficient placement in electronic designs.

Peak Wavelength (nm): 860

Peak wavelength of 860nm enables efficient detection and response to light signals in the specified range.

Optoelectronic Type: PHOTO DARLINGTON

Photo Darlington type provides high sensitivity and amplification of light signals for accurate detection.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for reliable performance in various environmental conditions.

Shape: ROUND

Round shape enables omnidirectional light detection, making it versatile for different applications.

Minimum Operating Temperature: -25 °C

Low minimum operating temperature ensures functionality even in colder environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Terminal finish of tin/silver/copper provides good conductivity and reliability for consistent performance.

Nominal Light Current: 0.9 mA

Nominal light current of 0.9mA indicates efficient conversion of light into electrical signals.

Maximum Dark Current: 1000 nA

Low maximum dark current of 1000nA ensures minimal unwanted signal output in the absence of light.

Infrared (IR) Range: YES

Infrared range compatibility allows for detection and response to infrared light signals.

Minimum Collector-emitter Breakdown Voltage: 35 V

Minimum collector-emitter breakdown voltage of 35V ensures protection against voltage spikes and overloads.

Technical Specifications

Phototransistors PT481FE0000F attributes and parameters. Explore more Phototransistors devices from Sharp Corporation

Specs

Additional Features:

SIDE VIEW

Minimum Collector-emitter Breakdown Voltage:

35 V

Configuration:

SINGLE

Maximum Dark Current:

1000 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e1

Nominal Light Current:

.9 mA

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Peak Wavelength (nm):

860

Shape:

ROUND

Size:

1.6 mm

Terminal Finish:

Manufacturer Highlights

Sharp Corporation

Sharp Corp is a Japan-based company that is principally engaged in producing and selling a broad range of consumer and industrial electronic products. The company's business segments consist of the consumer electronics segment, the energy solutions segment, the business solutions segment, the electronic components and devices segment, and the display devices segment. The company generates over half of its revenue from the consumer electronics segment and the display devices segment. It has a global business presence, with China, Japan, the Americas, and Europe its four largest markets.

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