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NTE6401

Nte Electronics

NTE6401 by Nte Electronics

NTE6401 by Nte Electronics is a Unijunction Transistor (UFT) with max emitter current of 50mA, max inter-base voltage of 35V, and max power dissipation of 0.3W. Ideal for switching applications due to its silicon element material and static inter-base resistance ranging from 4.7kohm to 9.1kohm.

Median Price

$6.384

Lifecycle Status

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1k+

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Verical

USA . 190 parts In-Stock

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-

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$7.077

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$7.077

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$7.077

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$7.077

$7.077

$7.077

Master Electronics

USA . 93 parts In-Stock

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$5.690

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$5.070

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$4.820

93

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$5.690

$5.070

$4.820

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DigiKey Marketplace

USA . 47 parts In-Stock

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$9.080

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$7.540

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$9.080

$7.540

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Hutch & Son

USA . 8 parts In-Stock

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$9.080

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$9.080

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Bristol Electronics

USA . 4 parts In-Stock

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$11.400

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Vyrian

USA . 13,620 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Electro Sonic

Canada . 294 parts In-Stock

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$5.860

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$5.220

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$4.960

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$4.960

Electronic Expediters

USA . 7 parts In-Stock

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Beckwith Electronics

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Lakeland Logistics Inc

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PC Components Company LLC

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Electronics Depot

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Aztec Data Supply Inc.

USA . 285 parts In-Stock

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$0.717

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$0.717

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AZTECH Wire

Italy . 492 parts In-Stock

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$10.687

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Microchip USA

USA . 428 parts In-Stock

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$25.424

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Continental Prestige Electronics

USA . 5,228 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 21 parts In-Stock

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Overview

Upgrade your electronic projects with the NTE6401 Unijunction Transistor by Nte Electronics. Designed for switching applications, this single configuration transistor offers reliable performance and durability. With a maximum emitter current of 50 mA and a package shape of ROUND, this product is versatile and efficient. Trust in the quality of Nte Electronics to deliver innovative solutions for your electronic needs. Experience the value and benefits of the NTE6401 today!

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides better heat dissipation, ensuring the transistors operate at optimal temperatures for improved performance and reliability.

Configuration: SINGLE

Single configuration simplifies circuit design and enhances reliability by reducing the number of components and potential failure points.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast response times and efficient operation in switching circuits.

Maximum Emitter Current: 50 mA

Can handle up to 50 mA of emitter current, making it suitable for a wide range of low to medium power applications.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into various circuit designs.

Terminal Form: WIRE

Wire terminals offer secure connections and ease of soldering, ensuring reliable electrical connections.

Maximum Inter-base Voltage: 35 V

With a max inter-base voltage of 35 V, this transistor provides a good margin for voltage spikes and variations in the circuit.

No. of Terminals: 3

3 terminals provide necessary connections for proper transistor operation and integration within a circuit.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers efficient use of space and easy integration into compact electronic devices.

Transistor Element Material: SILICON

Silicon material provides high reliability and performance in various operating conditions.

Minimum Intrinsic Stand-off Ratio: 0.56

Good intrinsic stand-off ratio indicates reliable operation and low trigger voltage requirements for switching applications.

Maximum Static Inter-Base Resistance: 9.1 kohm

Low inter-base resistance ensures efficient signal transfer and optimal performance in switching circuits.

Terminal Position: BOTTOM

Bottom terminal position allows for convenient PCB layout and soldering, ensuring easy integration into circuit designs.

Case Connection: BASE2

BASE2 case connection offers easy access to base terminals for proper circuit connections and configurations.

Maximum Intrinsic Stand-off Ratio: 0.75

High intrinsic stand-off ratio ensures reliable triggering and operation in switching applications.

Minimum Static Inter-Base Resistance: 4.7 kohm

Low static inter-base resistance ensures efficient signal transfer and minimal voltage drop across the transistor.

Minimum Valley Point Current: 4 mA

Valley point current of 4 mA ensures stable operation and reliable triggering in switching applications.

Maximum Peak Point Current: 5 mA

Capable of handling peak point currents up to 5 mA, making it suitable for transient load conditions and short-duration spikes.

Technical Specifications

Unijunction Transistors (UFT) NTE6401 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Nte Electronics

Specs

Case Connection:

BASE2

Configuration:

Maximum Emitter Current:

50 mA

Maximum Inter-base Voltage:

35 V

Maximum Intrinsic Stand-off Ratio:

.75

Minimum Intrinsic Stand-off Ratio:

.56

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

5 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

4 mA

Trade Compliance

NTE6401 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nte Electronics

Founded in New Jersey in 1979, NTE Electronics, Inc has grown from a small-town supplier with ten semiconductors in its entire line to the largest aftermarket semiconductor supplier in the industry. Today, our product line consists of over 23,000 devices. Included in this offering is NTE Brand Semiconductors. In January 2001 NTE acquired the assets of the ECG division of Philips N.A. With this addition, NTE became the industry leader in supplying private label aftermarket electronic components to the Industrial, Commercial, Consumer, and MRO marketplace. NTE is a Master Distributor for some of the industry's major manufacturers of electronic components and accessories. NTE's 40,000 square foot headquarters in Bloomfield, NJ houses, under one roof, all the essential services and inventory to continually supply electronic components to its worldwide network of authorized distributors. NTE's warehouse maintains a large inventory of each device to ensure a 98% fill rate and an average 24-hour shipping time. NTE devices are quality tested to consistently assure that they meet or exceed the industry specifications of the device they are replacing. They have been used in NASA space projects, German automobiles, hospital/medical applications and in virtually every type of consumer item. NTE's global network of distributors extends across the United States, Canada, Latin America, the Caribbean and 35 other countries throughout the world. No matter how you measure success, NTE Electronics, Inc has become the leader in the replacement electronic component industry.

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