Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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2N490A by Texas Instruments is a Unijunction Transistor (UFT) with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. It is used for switching applications due to its silicon element material and isolated case connection.
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Metal package body provides excellent thermal conductivity, allowing the transistor to dissipate heat efficiently during operation.
Single configuration simplifies circuit design and ensures easy integration into various electronic systems.
Designed specifically for switching applications, ensuring reliable performance and fast response times.
High maximum emitter current allows for handling of medium-power loads, expanding the range of applications for this transistor.
Round package shape provides uniform stress distribution, enhancing the overall reliability of the component.
Wire terminals offer secure connections and ease of soldering, simplifying installation and maintenance processes.
High maximum inter-base voltage rating ensures the transistor's durability and protection against overvoltage conditions.
Low power dissipation allows for energy-efficient operation and minimizes the risk of overheating, extending the transistor's lifespan.
Cylindrical package style offers compact design and easy mounting options, making it ideal for space-constrained applications.
High maximum operating temperature range ensures reliable performance in various environmental conditions, enhancing the transistor's versatility.
Silicon transistor element material provides stable and predictable electrical characteristics, ensuring consistent performance over time.
Wide minimum operating temperature range allows for use in extreme cold environments without compromising performance.
Low minimum intrinsic stand-off ratio ensures efficient switching capabilities and minimal leakage current, enhancing overall circuit efficiency.
High maximum static inter-base resistance provides stable and reliable inter-stage isolation, reducing the risk of signal crosstalk or interference.
Bottom terminal position allows for easy PCB layout and soldering processes, simplifying assembly and maintenance tasks.
Isolated case connection enhances safety and prevents potential short-circuits, ensuring the reliability and longevity of the transistor.
High maximum intrinsic stand-off ratio improves switching performance and signal integrity, enabling precise control and accurate operation.
Low minimum static inter-base resistance minimizes signal loss and distortion, ensuring clear and consistent output responses.
Low minimum valley point current ensures stable operation in the active region, allowing for reliable switching and control functions.
High maximum peak point current capability provides headroom for sudden load changes and transient conditions, improving the transistor's overall robustness.
Unijunction Transistors (UFT) 2N490A attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments
Case Connection:
Configuration:
Maximum Emitter Current:
Maximum Inter-base Voltage:
Maximum Intrinsic Stand-off Ratio:
Minimum Intrinsic Stand-off Ratio:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
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Package Style (Meter):
Maximum Peak Point Current:
Peak Reflow Temperature (C):
Maximum Power Dissipation (Abs):
Qualification:
Maximum Static Inter-Base Resistance:
Minimum Static Inter-Base Resistance:
Sub-Category:
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Maximum Time At Peak Reflow Temperature (s):
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Transistor Element Material:
Minimum Valley Point Current:
2N490A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-01-124-9682, 5961011249682
NIIN
011249682
Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.
President, CEO
Haviv Ilan
Chairman
Richard K. Templeton
Senior VP, CFO
Rafael R. Lizardi
M - Fab
Fabrication
Fab Initiation
1997
USA
South Portland
Wafer Capacity
32,000
D - FAB
1966
Dallas
42,000
D MOS - 6
2002
25,000
D MOS - 5
1995
75,000
Miho - 8
1980
Japan
Inashiki
43,000
S FAB 1
Sherman
91,000
F - FAB
2001
Germany
Freising
37,000
R Fab 1
2010
Richardson
40,000
D HC Line
1999
2,000
JV3
Aizu Wakamatsu
45,000
C - FAB
2007
China
Chengdu
30,000
L - Fab
2015
Lehi
70,000
R - Fab 2
2022
S - FAB 2
2025
S - FAB 3
2028
M24308/2-1F
Itt Cannon
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;
FDN306P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;
RN41N-I/RM
Microchip Technology
Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.
LM358N
Silicon Group
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
2N7002,215
NXP Semiconductors
2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.
BSS138
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
SS14
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Swampscott Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
Allegro MicroSystems
RECTIFIER DIODE; Terminal Position: END; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
2N7002
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
IRLML6401TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;
LL4148
First Components International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148
Nexperia
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
ULN-2803A
Sprague Electric
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;
Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Infineon Technologies
IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
CC0603KRX7R9BB103
Yageo
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.
1N4148WS
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N489B
Texas Instruments
2N489B by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, operating temperature range of -65 to 140°C, and max power dissipation of 0.45W. With a package style of cylindrical and isolated case connection, it offers reliable performance in various electronic circuits.
2N2417A
Onsemi
The Onsemi 2N2417A is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring precise triggering such as pulse generators and timing circuits due to its single configuration and silicon element material.
2N2646
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Minimum Valley Point Current: 4 mA; Maximum Operating Temperature: 125 Cel;
Nte Electronics
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Static Inter-Base Resistance: 9.1 kohm; Qualification: Not Qualified;
NTE6400A
NTE6400A by Nte Electronics is a Unijunction Transistor (UFT) with 3 terminals, made of silicon. It has a max emitter current of 50 mA and can handle up to 55 V inter-base voltage. Ideal for switching applications due to its low static inter-base resistance and high intrinsic stand-off ratio.
Boca Semiconductor
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Peak Point Current: 5 mA; Maximum Intrinsic Stand-off Ratio: .75; Maximum Inter-base Voltage: 35 V;
2N490C
The Onsemi 2N490C is a Unijunction Transistor (UFT) with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. It is used for switching applications due to its silicon element material and cylindrical package style.
P2646
Onsemi's P2646 is a Unijunction Transistor with key specs: Min. Stand-off Ratio 0.56, Max. Inter-Base Resistance 9.1 kohm, Min. Valley Point Current 4 mA. Ideal for applications requiring precise triggering and control in electronic circuits.
Comset Semiconductors
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Emitter Current: 50 mA; Maximum Peak Point Current: 5 mA; Maximum Inter-base Voltage: 35 V;
NTE6410
NTE6410 by Nte Electronics is a plastic/epoxy unijunction transistor with single configuration for switching applications. It has a max emitter current of 50mA, max inter-base voltage of 35V, and max power dissipation of 0.3W. Ideal for low-power switching circuits due to its compact cylindrical package design and silicon element material.
2N4870
New Jersey Semiconductor Products
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: THROUGH-HOLE; Transistor Application: SWITCHING;
2N491A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified;
2N491B
2N491B by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. Ideal for low-power switching circuits in various electronic devices.
2N493B
2N493B by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. With a package style of cylindrical and terminal form wire, it operates b/w -65 to 140°C effectively.
2N4894
The Texas Instruments 2N4894 is a Unijunction Transistor (UFT) with a max emitter current of 50mA and max power dissipation of 0.3W. It is commonly used for switching applications due to its single configuration, silicon element material, and operating temperature range from -55°C to 150°C.
2N493A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JEDEC-95 Code: TO-5; Minimum Operating Temperature: -65 Cel;
Philips Components
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Package Shape: ROUND; JEDEC-95 Code: TO-92;
2N492A
2N492A by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, operating temperature range of -65 to 140°C, and package style in cylindrical shape. With a min static inter-base resistance of 6.2kohm and max peak point current of 12mA, it is ideal for low-power electronic circuits.
TIS43
TIS43 by Texas Instruments is a Unijunction Transistor (UFT) with a max power dissipation of 0.36W, ideal for switching applications. It features a single configuration, silicon transistor element material, and 3 wire terminals in a cylindrical package shape. With a max static inter-base resistance of 9.1 kohm and min valley point current of 2 mA, it offers reliable performance for various electronic circuits.
Semiconductors
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Static Inter-Base Resistance: 9.1 kohm; Minimum Intrinsic Stand-off Ratio: .56; Maximum Operating Temperature: 125 Cel;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
DRV8316RRGFR
DRV8316RRGFR by Texas Instruments is a motion control IC with a rectangular package and a terminal form of gull wing. It has a max output current of 8A and can operate at temperatures ranging from -40 to 125°C. This IC is commonly used as a brushless DC motor controller in automotive applications.
TPS7A4301DGQR
TPS7A4301DGQR by Texas Instruments is an adjustable positive single output LDO regulator with a max output voltage of 14.5V and a dropout voltage of 0.6V. It operates in temperatures ranging from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.
DS160PT801ACBR
DS160PT801ACBR by Texas Instruments is a bus controller IC with 339 terminals, operating at -40 to 85°C. It supports PCI bus compatibility with a data transfer rate of 2000 MBps. This CMOS technology device has a thin profile and fine pitch package suitable for industrial applications.
LMR43610MSC3RPERQ1
LMR43610MSC3RPERQ1 by Texas Instruments is a 9-terminal switching regulator with a max output voltage of 32V and max output current of 1A. Ideal for automotive applications, it operates b/w -40 to 150°C, featuring a buck switcher config and PWM control mode at up to 2200kHz frequency.
UCC27284DRCR
UCC27284DRCR by Texas Instruments is a MOSFET gate driver with 2 channels, capable of handling a max output current of 3.5A. It operates in automotive-grade temperatures (-40 to 125°C) and has a turn-on/off time of 30µs. This chip carrier package with very thin profile is suitable for high side driver applications requiring fast switching speeds.
DRV3255EPAPRQ1
DRV3255EPAPRQ1 by Texas Instruments is a Motion Control IC with 64 terminals, operating at -40 to 150°C. It is an AEC-Q100 compliant automotive-grade IC for Brushless DC Motor control, supporting supply voltages from 5V to 90V and output currents up to 3.5A. The package style includes a flatpack with heat sink/slug, suitable for surface mount applications in automotive systems.
CC2662R1FTWRGZRQ1
CC2662R1FTWRGZRQ1 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU, 48 MHz clock frequency, and 81920 bytes of RAM. Ideal for industrial applications, it features 8 ADC channels, 32 DMA channels, and peripherals like AES and PWM for efficient system integration.
2N4946
Unijunction Transistors; Configuration: SINGLE; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Element Material: SILICON;
2N494
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Emitter Current: 70 mA; JESD-30 Code: O-MBCY-W3;
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Package Body Material: METAL; Maximum Inter-base Voltage: 65 V;
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Qualification: Not Qualified; Minimum Operating Temperature: -65 Cel;
2N4947
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Intrinsic Stand-off Ratio: .69; Maximum Operating Temperature: 200 Cel;
2N490B
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JEDEC-95 Code: TO-5; Maximum Emitter Current: 70 mA;
2N494A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; No. of Elements: 1; Maximum Static Inter-Base Resistance: 9.1 kohm;
2N490
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JESD-30 Code: O-MBCY-W3; Package Body Material: METAL;
2N492
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Minimum Valley Point Current: 8 mA; JEDEC-95 Code: TO-5;
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Static Inter-Base Resistance: 6.8 kohm; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2N492B
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Static Inter-Base Resistance: 9.1 kohm; Qualification: Not Qualified;
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Package Shape: ROUND; Maximum Emitter Current: 70 mA;
2N4948
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Peak Reflow Temperature (C): NOT SPECIFIED; Minimum Operating Temperature: -65 Cel;
2N493
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; No. of Elements: 1; JEDEC-95 Code: TO-5;
2N4949
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Static Inter-Base Resistance: 12 kohm; Minimum Intrinsic Stand-off Ratio: .74;
2N494B
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Intrinsic Stand-off Ratio: .75; Maximum Inter-base Voltage: 65 V; Maximum Peak Point Current: 6 mA;
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Intrinsic Stand-off Ratio: .75; Minimum Operating Temperature: -65 Cel;
2N491
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JESD-30 Code: O-MBCY-W3; JEDEC-95 Code: TO-5;
Space Power Electronics
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Inter-base Voltage: 65 V; Package Shape: ROUND;
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