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2N2647

Texas Instruments

2N2647 by Texas Instruments

2N2647 by Texas Instruments is a Unijunction Transistor (UFT) with max emitter current of 50mA, max inter-base voltage of 35V, and max power dissipation of 0.3W. It is used for switching applications due to its silicon element material and single configuration.

Median Price

$5.875

Lifecycle Status

Suppliers In-Stock

43

In-Stock Inventory

1k+

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Element14

Singapore . 1,337 parts In-Stock

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Farnell

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TEDSS.com

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Digiode

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Ace Electronics

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Component Electronics Inc.

Canada . 7 parts In-Stock

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Forefront Electronics and Design

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American Microsemiconductor Inc.

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Vyrian

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PUI

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Bristol Electronics

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Halfin

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Electronics Depot

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Manoshevitz Elec. Sales

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Holdelec - ElecDif-Pro

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Inland Empire Components Inc.

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Century Electronics Ltd.

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Lakeview Electronics

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Advanced Electronics

New Zealand . 800 parts In-Stock

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$0.404

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$0.400

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$0.384

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$0.404

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Parana Technologies

USA . 832 parts In-Stock

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$0.836

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$1.798

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$0.836

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DigiPath Technology Company

USA . 492 parts In-Stock

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$0.920

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$0.847

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ChromeModa Solutions

Germany . 1,664 parts In-Stock

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$0.939

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$0.770

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IDEA Electronic Components Group

UK . 16 parts In-Stock

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$0.939

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$0.845

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Component Stockers USA

USA . 6,968 parts In-Stock

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$1.630

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$1.630

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$1.500

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Corphita

USA . 4,406 parts In-Stock

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Continental Prestige Electronics

USA . 313 parts In-Stock

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$3.660

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$2.060

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Native Components

USA . 149 parts In-Stock

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$16.069

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Northwest PG Solutions

USA . 1,808 parts In-Stock

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$15.908

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QUARKTWIN TECHNOLOGY LTD

USA . 23,086 parts In-Stock

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Microchip USA

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Futuretech Components

Singapore . 318 parts In-Stock

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Kepictronics

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Perfect Parts

USA . 237 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 106 parts In-Stock

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RTC Component Inc.

USA . 75 parts In-Stock

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Assy Fe

Spain . 57 parts In-Stock

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Overview

Looking for a reliable and high-quality Unijunction Transistor for your switching applications? Look no further than the 2N2647 by Texas Instruments. With its durable metal package body and innovative design, this transistor offers exceptional performance and efficiency. Whether you're building electronic circuits or designing control systems, this transistor is sure to meet your needs. Trust Texas Instruments for top-notch components that deliver value and reliability. Upgrade your projects with the 2N2647 today!

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide better heat dissipation and mechanical protection, making the transistor more durable and reliable.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures ease of use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation.

Maximum Emitter Current: 50 mA

High maximum emitter current allows for versatility in different circuit designs and applications.

Package Shape: ROUND

Round package shape offers better space utilization and facilitates easier mounting.

Terminal Form: WIRE

Wire terminals provide secure connections and flexibility in circuit board layouts.

Maximum Inter-base Voltage: 35 V

High maximum inter-base voltage tolerance ensures safety and reliability in high voltage applications.

No. of Terminals: 3

3 terminal configuration offers versatility in circuit connections and applications.

Maximum Power Dissipation (Abs): 0.3 W

Ability to dissipate up to 0.3 watts of power ensures stable operation under varying load conditions.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides compact and efficient packaging.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability in harsh environmental conditions.

Transistor Element Material: SILICON

Silicon transistor element offers high performance and reliability in various applications.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for operation in extreme cold conditions.

Minimum Intrinsic Stand-off Ratio: 0.68

Low minimum intrinsic stand-off ratio ensures proper biasing and stable operation.

Maximum Static Inter-Base Resistance: 9.1 kohm

Low inter-base resistance allows for efficient signal transfer and improved performance.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy and secure mounting on circuit boards.

Case Connection: BASE2

Base2 case connection provides reliable electrical contact for improved performance.

Maximum Intrinsic Stand-off Ratio: 0.82

High maximum intrinsic stand-off ratio ensures proper biasing and stable operation.

Minimum Static Inter-Base Resistance: 4.7 kohm

Low static inter-base resistance ensures efficient signal transfer and improved performance.

Minimum Valley Point Current: 8 mA

Valley point current of 8 mA ensures proper triggering and switching operation.

Maximum Peak Point Current: 2 mA

Peak point current of 2 mA ensures reliable and efficient switching performance.

Technical Specifications

Unijunction Transistors (UFT) 2N2647 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

BASE2

Configuration:

Maximum Emitter Current:

50 mA

Maximum Inter-base Voltage:

35 V

Maximum Intrinsic Stand-off Ratio:

.82

Minimum Intrinsic Stand-off Ratio:

.68

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

2 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N2647 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-148-2659, 5961001482659, 5961-00-097-8676, 5961000978676, 5961-00-764-3167, 5961007643167, 5961-00-895-6389, 5961008956389, 5961-00-472-3255, 5961004723255, 5961-01-104-2883, 5961011042883

NIIN

001482659, 000978676, 007643167, 008956389, 004723255, 011042883

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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