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2N4949

Texas Instruments

2N4949 by Texas Instruments

2N4949 by Texas Instruments is a Unijunction Transistor (UFT) with a max emitter current of 50mA and max power dissipation of 0.36W. It is commonly used for switching applications due to its single configuration and silicon transistor element material.

Median Price

$15.000

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Ace Electronics

USA . 1 parts In-Stock

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$5.000

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TEDSS.com

USA . 4 parts In-Stock

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$15.000

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American Microsemiconductor Inc.

USA . 137 parts In-Stock

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$825.000

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Vyrian

USA . 8,874 parts In-Stock

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Digiode

USA . 3,615 parts In-Stock

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PUI

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QIE Inc.

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Tech-Mark Corp

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ES Components

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Lakeland Logistics Inc

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Extreme Components

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Bristol Electronics

USA . 8 parts In-Stock

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Electronic Expediters

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ECAB

Sweden . 3 parts In-Stock

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Native Components

USA . 508 parts In-Stock

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$1.308

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$1.308

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Parana Technologies

USA . 917 parts In-Stock

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$1.621

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$2.245

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917

$1.621

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$2.245

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DigiPath Technology Company

USA . 1,645 parts In-Stock

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$1.785

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$1.642

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ChromeModa Solutions

Germany . 2,886 parts In-Stock

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$1.821

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$1.493

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IDEA Electronic Components Group

UK . 1,798 parts In-Stock

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$1.639

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Corohmni

South Africa . 169 parts In-Stock

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AZTECH Wire

Italy . 407 parts In-Stock

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$18.534

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One Stop Electronics

USA . 406 parts In-Stock

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$62.050

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Problanco Electronics

Mexico . 5,686 parts In-Stock

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TANS Electronics

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Corphita

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Northwest PG Solutions

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SupplyDigital Components

Austria . 3,524 parts In-Stock

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Glotronic Ltd.

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 649 parts In-Stock

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Assy Fe

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Overview

Discover the unparalleled quality of the 2N4949 by Texas Instruments, a top-of-the-line Unijunction Transistor designed for switching applications. Crafted with precision and expertise, this product offers exceptional performance and reliability that only a manufacturer like Texas Instruments can provide. Whether you're looking to enhance your electronic projects or optimize your industrial processes, the 2N4949 delivers unmatched value, benefits, and advantages to meet all your needs. Upgrade to Texas Instruments and experience innovation at its finest.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and thermal conductivity, ensuring reliable performance in various operating conditions.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to implement the transistor in different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it suitable for use in electronic devices that require fast on/off transitions.

Maximum Emitter Current: 50 mA

Capable of handling up to 50 mA of emitter current, allowing for use in a wide range of low to medium power applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200°C, this transistor can withstand high temperatures without performance degradation.

Technical Specifications

Unijunction Transistors (UFT) 2N4949 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

BASE2

Configuration:

Maximum Emitter Current:

50 mA

Maximum Inter-base Voltage:

25 V

Maximum Intrinsic Stand-off Ratio:

.86

Minimum Intrinsic Stand-off Ratio:

.74

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

1 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

12 kohm

Minimum Static Inter-Base Resistance:

4 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

2 mA

Trade Compliance

2N4949 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-497-0988, 5961004970988, 5961-00-761-4504, 5961007614504, 5961-99-118-9313, 5961991189313

NIIN

004970988, 007614504, 991189313

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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