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2N491

Texas Instruments

2N491 by Texas Instruments

The Texas Instruments 2N491 is a Unijunction Transistor (UFT) with a max emitter current of 70mA and max power dissipation of 0.45W. It is commonly used for switching applications due to its single configuration and silicon transistor element material. Operating temperature ranges from -65°C to 140°C, making it suitable for various electronic devices.

Median Price

$45.100

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 5 parts In-Stock

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$45.100

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Vyrian

USA . 2,034 parts In-Stock

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Digiode

USA . 738 parts In-Stock

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Manotoh

Italy . 27 parts In-Stock

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Sinequanon

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Sunrise Surplus Inc.

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Electronic Expediters

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Electronics Depot

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DF Sales Co.

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DF Sales Co.

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M&R Communications

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MISTER SPROCKETS

USA . 3 parts In-Stock

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PUI

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ECAB

Sweden . 2 parts In-Stock

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Mil-Aero Solutions, Inc.

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Bristol Electronics

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One Stop Electronics

USA . 1,265 parts In-Stock

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$0.050

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$0.050

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Parana Technologies

USA . 289 parts In-Stock

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$0.668

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$1.718

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DigiPath Technology Company

USA . 2,234 parts In-Stock

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$0.736

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$0.677

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ChromeModa Solutions

Germany . 6,124 parts In-Stock

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$0.751

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$0.616

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IDEA Electronic Components Group

UK . 2,079 parts In-Stock

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$0.751

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$0.676

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Native Components

USA . 922 parts In-Stock

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$1.040

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$1.040

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Northwest PG Solutions

USA . 955 parts In-Stock

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$1.144

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AZTECH Wire

Italy . 430 parts In-Stock

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$11.817

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Corphita

USA . 3,331 parts In-Stock

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Assy Fe

Spain . 48 parts In-Stock

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RTC Component Inc.

USA . 5 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the 2N491 Unijunction Transistor. Designed for switching applications, this single configuration transistor offers a maximum emitter current of 70 mA and a maximum power dissipation of 0.45 W. With a package body made of metal and a round shape, this transistor is ideal for various electronic projects. Trust in Texas Instruments to deliver cutting-edge technology and unmatched performance. Elevate your projects with the 2N491 and experience the difference today!

Feature Benefit Bullets

Package Body Material: METAL

Provides durability and heat dissipation, resulting in a longer lifespan and improved performance.

Configuration: SINGLE

Simplified design and operation make it easy to use and integrate into various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in such scenarios.

Maximum Emitter Current: 70 mA

Allows for handling higher currents, making it suitable for applications that require such capabilities.

Maximum Power Dissipation (Abs): 0.45 W

Can dissipate heat efficiently, preventing overheating and ensuring stable performance.

Maximum Operating Temperature: 140 °C

Capable of operating at high temperatures, suitable for demanding environments.

Minimum Operating Temperature: -65 °C

Operational in low-temperature conditions, making it versatile for a wide range of environments.

Maximum Static Inter-Base Resistance: 6.8 kohm

Low resistance ensures efficient current flow and stability in circuit operation.

Minimum Static Inter-Base Resistance: 4.7 kohm

Low resistance minimizes power loss and improves overall performance.

Technical Specifications

Unijunction Transistors (UFT) 2N491 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.68

Minimum Intrinsic Stand-off Ratio:

.56

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

12 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

6.8 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N491 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-617-3873, 5961006173873, 5961-00-808-8398, 5961008088398, 5961-00-416-9681, 5961004169681, 5961-00-483-4567, 5961004834567, 5961-00-926-2569, 5961009262569, 5961-99-108-5208, 5961991085208, 5961-14-246-8738, 5961142468738, 5961-15-053-6115, 5961150536115, 5961-99-526-2073, 5961995262073

NIIN

006173873, 008088398, 004169681, 004834567, 009262569, 991085208, 142468738, 150536115, 995262073

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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