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2N2420A

Onsemi

2N2420A by Onsemi

The Onsemi 2N2420A is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for temperature range -65 to 140 °C, such as pulse generators and timing circuits.

Median Price

$23.440

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 3 parts In-Stock

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Vyrian

USA . 1,810 parts In-Stock

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Digiode

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Resion

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Northwest PG Solutions

USA . 646 parts In-Stock

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$3.251

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Corohmni

South Africa . 374 parts In-Stock

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Problanco Electronics

Mexico . 7,408 parts In-Stock

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Kulean Microsystems

USA . 6,537 parts In-Stock

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TANS Electronics

Latvia . 4,312 parts In-Stock

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SupplyDigital Components

Austria . 2,078 parts In-Stock

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UHIMA Technologies

Türkiye . 947 parts In-Stock

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Native Components

USA . 730 parts In-Stock

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Corphita

USA . 96 parts In-Stock

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Overview

Elevate your electronic designs with the 2N2420A Unijunction Transistor by Onsemi! Known for their superior quality and reliability, Onsemi delivers cutting-edge technology in a compact and efficient package. Whether you're working on industrial control systems, pulse generators, or timing circuits, this single-configured transistor offers exceptional performance with maximum emitter current of 70 mA and a wide operating temperature range. Experience the value and benefits of Onsemi's 2N2420A - where innovation meets excellence!

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body provides durability and helps in efficient heat dissipation, ensuring the reliability and longevity of the product.

Maximum Emitter Current: 70 mA

The high maximum emitter current allows for high-performance operation and flexibility in various circuit applications.

Maximum Inter-base Voltage: 65 V

The high maximum inter-base voltage rating ensures stability and protection against potential voltage spikes or fluctuations.

Maximum Power Dissipation (Abs): 0.3 W

The low power dissipation rating helps in reducing energy consumption and heat generation, making the product energy-efficient and reliable.

Maximum Operating Temperature: 140 °C

The wide maximum operating temperature range provides versatility and suitability for use in different environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows for reliable performance even in extreme cold conditions.

Maximum Static Inter-Base Resistance: 9.1 kohm

The high maximum static inter-base resistance ensures stable and consistent performance in various circuit configurations.

Minimum Valley Point Current: 8 mA

The low minimum valley point current allows for precise triggering and control, enabling efficient operation in different circuit designs.

Technical Specifications

Unijunction Transistors (UFT) 2N2420A attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.68

Minimum Intrinsic Stand-off Ratio:

.56

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

12 mA

Maximum Power Dissipation (Abs):

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

6.2 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N2420A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-761-5860, 5961007615860, 5961-01-094-7334, 5961010947334, 5961-00-498-8347, 5961004988347

NIIN

007615860, 010947334, 004988347

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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