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2N2421A

Onsemi

2N2421A by Onsemi

The Onsemi 2N2421A is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for temperature range -65 to 140 °C, such as pulse generators and timing circuits.

Median Price

$35.000

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 5 parts In-Stock

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$35.000

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Digiode

USA . 1,516 parts In-Stock

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Vyrian

USA . 713 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 865 parts In-Stock

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$20.610

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Northwest PG Solutions

USA . 2,059 parts In-Stock

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$22.671

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$20.404

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$22.671

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Corohmni

South Africa . 371 parts In-Stock

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$35.000

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Problanco Electronics

Mexico . 6,463 parts In-Stock

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Kulean Microsystems

USA . 3,703 parts In-Stock

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Corphita

USA . 1,039 parts In-Stock

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TANS Electronics

Latvia . 839 parts In-Stock

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SupplyDigital Components

Austria . 806 parts In-Stock

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UHIMA Technologies

Türkiye . 555 parts In-Stock

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Overview

Discover the powerful performance of the 2N2421A by Onsemi, a top-quality Unijunction Transistor that offers reliability and efficiency like no other. Manufactured by industry leader Onsemi, this product is designed for a wide range of applications in electronics, ensuring superior functionality and durability. With its impressive maximum emitter current of 70 mA and maximum power dissipation of 0.3 W, this transistor delivers outstanding results while maintaining a compact package shape and easy terminal form. Experience the value and benefits of the 2N2421A, providing customers with unparalleled advantages in their electronic projects.

Feature Benefit Bullets

Package Body Material: METAL

Provides durability and heat dissipation, ensuring long-lasting performance.

Maximum Emitter Current: 70 mA

High current capacity allows for versatile use in various applications.

Maximum Inter-base Voltage: 65 V

Withstands high voltages, making it suitable for different circuit designs.

Maximum Power Dissipation (Abs): 0.3 W

Efficient power handling capability for reliable operation.

Maximum Operating Temperature: 140 °C

Can withstand high temperatures, ensuring stability in different environments.

Minimum Operating Temperature: -65 °C

Operates effectively in extreme cold conditions, offering versatility in usage.

Maximum Static Inter-Base Resistance: 6.8 kohm

Provides stable performance and reliability in circuit applications.

Minimum Static Inter-Base Resistance: 4.7 kohm

Low resistance for efficient signal transmission and performance.

Minimum Valley Point Current: 8 mA

Precise triggering point for consistent operation.

Maximum Peak Point Current: 12 mA

Supports high current peaks for demanding applications.

Technical Specifications

Unijunction Transistors (UFT) 2N2421A attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.75

Minimum Intrinsic Stand-off Ratio:

.62

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

12 mA

Maximum Power Dissipation (Abs):

Maximum Static Inter-Base Resistance:

6.8 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N2421A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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