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2N4851

Texas Instruments

2N4851 by Texas Instruments

2N4851 by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 50mA, operating temperature range from -65 to 200°C, and a package style in cylindrical shape. With a min intrinsic stand-off ratio of 0.56 and max static inter-base resistance of 9.1kohm, it is ideal for low-power electronic circuits.

Median Price

$10.920

Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

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American Microsemiconductor Inc.

USA . 2 parts In-Stock

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Digiode

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Vyrian

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PUI

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LittleDiode

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Fibra_Brandt Electronic GMBH

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Elcom Components

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Electronic Supply

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Bristol Electronics

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MISTER SPROCKETS

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ICP Electronique

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Electronic Expediters

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A2Z Electronics, Inc.

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MRC Electronics

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ComSIT Distribution GmbH

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Native Components

USA . 406 parts In-Stock

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$0.305

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$0.293

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Northwest PG Solutions

USA . 1,883 parts In-Stock

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$0.336

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One Stop Electronics

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$1.050

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Parana Technologies

USA . 1,797 parts In-Stock

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DigiPath Technology Company

USA . 1,934 parts In-Stock

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$1.568

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$1.443

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ChromeModa Solutions

Germany . 1,150 parts In-Stock

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IDEA Electronic Components Group

UK . 908 parts In-Stock

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AZTECH Wire

Italy . 898 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Corphita

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Marpe Global Electronics

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QualityLine Systems

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XL Components Corporation

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Glotronic Ltd.

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Overview

Looking for a reliable switching solution? Look no further than the 2N4851 by Texas Instruments. With a reputation for top-notch quality and innovation, Texas Instruments delivers yet again with this Unijunction Transistor. Perfect for applications requiring precise switching capabilities, this single configuration transistor offers customers exceptional value and performance. Trust Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations. Switch to the 2N4851 today and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and helps in efficient heat dissipation, making the product long-lasting and reliable.

Maximum Emitter Current: 50 mA

High maximum emitter current allows for handling larger loads, making it suitable for various switching applications.

Maximum Inter-base Voltage: 35 V

High inter-base voltage rating provides a wide operating range and prevents damage due to voltage spikes.

Maximum Power Dissipation (Abs): 0.3 W

Low power dissipation ensures efficient energy use and reduces heat generation, improving the overall performance.

Maximum Operating Temperature: 200 °C

Wide operating temperature range allows the product to be used in various environments without compromising performance.

Minimum Intrinsic Stand-off Ratio: 0.56

Higher intrinsic stand-off ratio ensures stable and reliable switching behavior, reducing the risk of malfunction.

Terminal Position: BOTTOM

Bottom terminal position simplifies the installation process and provides easy access for connections, enhancing user-friendliness.

Maximum Intrinsic Stand-off Ratio: 0.75

Higher intrinsic stand-off ratio indicates better isolation between components, reducing the risk of electrical interference.

Technical Specifications

Unijunction Transistors (UFT) 2N4851 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

BASE2

Configuration:

Maximum Emitter Current:

50 mA

Maximum Inter-base Voltage:

35 V

Maximum Intrinsic Stand-off Ratio:

.75

Minimum Intrinsic Stand-off Ratio:

.56

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

2 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

2 mA

Trade Compliance

2N4851 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-118-1180, 5961001181180, 5961-00-485-8783, 5961004858783

NIIN

001181180, 004858783

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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