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2N4852

Texas Instruments

2N4852 by Texas Instruments

2N4852 by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 50mA, operating temperature range from -65 to 125°C, and max power dissipation of 0.3W. With a package style of cylindrical and terminal form wire, it offers reliable performance in various electronic circuits.

Median Price

$7.000

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

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Freelance Electronics

USA . 4 parts In-Stock

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DF Sales Co.

USA . 78 parts In-Stock

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DF Sales Co.

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American Microsemiconductor Inc.

USA . 200 parts In-Stock

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$11.870

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Vyrian

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Digiode

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PUI

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ES Components

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ACDS - Activité Composants Distribution Service

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Nova Conductors

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Tech-Mark Corp

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Manoshevitz Elec. Sales

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MISTER SPROCKETS

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Fibra_Brandt Electronic GMBH

Germany . 15 parts In-Stock

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Electronic Expediters

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Pegasus Components GmbH

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Bristol Electronics

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Rebound Electronics

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R&J Components

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LittleDiode

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Electronics Depot

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Distributors (Availability)

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Benley Electronics

USA . 30 parts In-Stock

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$0.450

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Parana Technologies

USA . 1,881 parts In-Stock

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$0.850

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$1.805

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$0.850

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DigiPath Technology Company

USA . 1,003 parts In-Stock

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$0.936

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$0.861

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$0.936

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ChromeModa Solutions

Germany . 1,962 parts In-Stock

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$0.955

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$0.783

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IDEA Electronic Components Group

UK . 1,666 parts In-Stock

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$0.860

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AZTECH Wire

Italy . 882 parts In-Stock

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One Stop Electronics

USA . 941 parts In-Stock

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Corphita

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QUARKTWIN TECHNOLOGY LTD

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Netroflash

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RGB Technical Solutions

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RTC Component Inc.

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Overview

Elevate your electronic projects with the Texas Instruments 2N4852 Unijunction Transistor. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge technology that ensures optimal performance in switching applications. The 2N4852 boasts a robust design and efficient functionality, making it a valuable asset for any project requiring precise control and operation. Experience the benefits of this top-of-the-line transistor and unlock a world of possibilities in your creations.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity, allowing for efficient heat dissipation during operation.

Configuration: SINGLE

Single configuration simplifies circuit design and assembly, making the product easy to use.

Transistor Application: SWITCHING

Designed for switching applications, this UJT is suitable for use in electronic circuits that require rapid on/off switching.

Maximum Emitter Current: 50 mA

High maximum emitter current allows for use in applications that require higher current capabilities.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this UJT can withstand high temperature environments.

Minimum Operating Temperature: -65 °C

Wide temperature range of -65°C to 125°C ensures reliable operation in various temperature conditions.

Technical Specifications

Unijunction Transistors (UFT) 2N4852 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

BASE2

Configuration:

Maximum Emitter Current:

50 mA

Maximum Inter-base Voltage:

35 V

Maximum Intrinsic Stand-off Ratio:

.85

Minimum Intrinsic Stand-off Ratio:

.7

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

2 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

4 mA

Trade Compliance

2N4852 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-118-4775, 5961001184775, 5961-00-175-6999, 5961001756999, 5961-99-744-1615, 5961997441615

NIIN

001184775, 001756999, 997441615

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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