Loading...

2N494C

Onsemi

2N494C by Onsemi

The Onsemi 2N494C is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. Ideal for low-power switching circuits due to its silicon element material and operating temperature range from -65 °C to 140°C.

Median Price

$50.450

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 12 parts In-Stock

1+ parts

$50.450

100+ parts

-

1k+ parts

-

10k+ parts

-

12

$50.450

-

-

-

Digiode

USA . 1,104 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,104

-

-

-

-

Vyrian

USA . 643 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

643

-

-

-

-

PUI

USA . 56 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56

-

-

-

-

Holdelec - ElecDif-Pro

France . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8

-

-

-

-

Electronic Expediters

USA . 7 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7

-

-

-

-

MISTER SPROCKETS

USA . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 669 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

$0.084

669

$0.088

-

-

$0.084

Northwest PG Solutions

USA . 1,322 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

-

10k+ parts

$0.085

1,322

$0.097

-

-

$0.085

Corohmni

South Africa . 314 parts In-Stock

1+ parts

$50.450

100+ parts

-

1k+ parts

-

10k+ parts

-

314

$50.450

-

-

-

Kulean Microsystems

USA . 7,621 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,621

-

-

-

-

SupplyDigital Components

Austria . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Problanco Electronics

Mexico . 3,951 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,951

-

-

-

-

UHIMA Technologies

Türkiye . 420 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

420

-

-

-

-

Corphita

USA . 321 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

321

-

-

-

-

TANS Electronics

Latvia . 275 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

275

-

-

-

-

Overview

Discover the exceptional quality and reliability of the Onsemi 2N494C Unijunction Transistor. Manufactured by industry leader Onsemi, this Single configuration transistor is perfect for switching applications, offering a maximum emitter current of 70 mA and a maximum power dissipation of 0.45 W. With a package style of CYLINDRICAL and a terminal finish of Tin/Lead (Sn/Pb), this transistor guarantees superior performance and efficiency. Ideal for a wide range of electronic applications, the Onsemi 2N494C provides customers with value, benefits, and advantages that exceed expectations. Upgrade your projects with this top-of-the-line component today!

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and heat dissipation, making the transistor suitable for high temperature environments and ensuring long-lasting performance.

Configuration: SINGLE

Single configuration simplifies circuit design and increases reliability by eliminating the need for additional components.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and efficient operation.

Maximum Emitter Current: 70 mA

High maximum emitter current allows for higher power handling capability and flexibility in various circuit designs.

Package Shape: ROUND

Round package shape enables easy integration into circuit boards and provides a compact form factor for space-constrained applications.

Terminal Form: WIRE

Wire terminals ensure secure connections and easy soldering during assembly, enhancing the overall reliability of the transistor.

Maximum Inter-base Voltage: 65 V

High maximum inter-base voltage rating ensures reliable performance and protection against voltage spikes in various applications.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and allow for versatile usage in different electronic configurations.

Maximum Power Dissipation (Abs): 0.45 W

With a high maximum power dissipation rating, this transistor can handle continuous power loads without overheating, ensuring reliable operation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers easy mounting and ensures efficient heat dissipation, enhancing the overall performance of the transistor.

Maximum Operating Temperature: 140 °C

High maximum operating temperature enables the transistor to operate reliably in high-temperature environments without performance degradation.

Transistor Element Material: SILICON

Silicon transistor element material provides high performance, low ON resistance, and reliable operation for a wide range of applications.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows the transistor to function in cold environments without impacting its performance.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish ensures excellent solderability and reliable electrical connections for long-term usage.

Minimum Intrinsic Stand-off Ratio: 0.62

A higher minimum intrinsic stand-off ratio indicates better voltage-blocking capability, offering protection against voltage surges and enhancing the transistor's reliability.

Maximum Static Inter-Base Resistance: 9.1 kohm

Low static inter-base resistance ensures efficient signal transfer and minimal power losses in the transistor's operation.

Terminal Position: BOTTOM

Bottom terminal position simplifies the installation process and provides easy access for circuit connections, enhancing usability.

Maximum Intrinsic Stand-off Ratio: 0.75

High maximum intrinsic stand-off ratio offers superior voltage-blocking capabilities, ensuring reliable operation in varying voltage conditions.

Minimum Static Inter-Base Resistance: 6.2 kohm

Low minimum static inter-base resistance minimizes power losses and ensures efficient signal transfer within the transistor.

Minimum Valley Point Current: 8 mA

A higher minimum valley point current ensures stable operation in the valley region of the transistor's characteristics, improving performance under varying conditions.

Maximum Peak Point Current: 2 mA

Low maximum peak point current allows for safe operation and prevents excessive current flow, ensuring the transistor's longevity and reliability.

Technical Specifications

Unijunction Transistors (UFT) 2N494C attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.75

Minimum Intrinsic Stand-off Ratio:

.62

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

2 mA

Maximum Power Dissipation (Abs):

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

6.2 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N494C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-724-7463, 5961007247463, 5961-01-074-6574, 5961010746574, 5961-14-278-2260, 5961142782260

NIIN

007247463, 010746574, 142782260

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20