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2N490B

Texas Instruments

2N490B by Texas Instruments

2N490B by Texas Instruments is a Unijunction Transistor (UFT) with max emitter current of 70mA and max power dissipation of 0.45W. It is used for switching applications, featuring a package shape of ROUND and terminal form WIRE. Operating temperature ranges from -65 to 140 °C.

Median Price

$42.000

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 240 parts In-Stock

1+ parts

$42.000

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240

$42.000

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DF Sales Co.

USA . 240 parts In-Stock

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$42.000

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240

$42.000

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Digiode

USA . 4,875 parts In-Stock

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4,875

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Vyrian

USA . 3,411 parts In-Stock

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3,411

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PUI

USA . 2 parts In-Stock

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2

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Sunrise Surplus Inc.

USA . 1 parts In-Stock

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1

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Distributors (Availability)

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Native Components

USA . 1,727 parts In-Stock

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$0.072

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-

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$0.069

1,727

$0.072

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$0.069

Parana Technologies

USA . 117 parts In-Stock

1+ parts

$0.943

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$1.850

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117

$0.943

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$1.850

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DigiPath Technology Company

USA . 1,529 parts In-Stock

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$1.038

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$0.955

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1,529

$1.038

$0.955

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ChromeModa Solutions

Germany . 1,530 parts In-Stock

1+ parts

$1.059

100+ parts

$0.868

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1,530

$1.059

$0.868

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IDEA Electronic Components Group

UK . 670 parts In-Stock

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$1.059

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$0.953

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670

$1.059

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$0.953

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AZTECH Wire

Italy . 749 parts In-Stock

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$7.549

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749

$7.549

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One Stop Electronics

USA . 558 parts In-Stock

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$26.050

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558

$26.050

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Corohmni

South Africa . 168 parts In-Stock

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$42.000

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168

$42.000

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SupplyDigital Components

Austria . 8,115 parts In-Stock

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Kulean Microsystems

USA . 7,385 parts In-Stock

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Corphita

USA . 3,782 parts In-Stock

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Northwest PG Solutions

USA . 1,515 parts In-Stock

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TANS Electronics

Latvia . 846 parts In-Stock

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Problanco Electronics

Mexico . 830 parts In-Stock

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830

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UHIMA Technologies

Türkiye . 146 parts In-Stock

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146

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Overview

Elevate your electronic projects with the 2N490B by Texas Instruments, a high-quality Unijunction Transistor designed for switching applications. Crafted with precision by the renowned manufacturer, this single configuration transistor offers reliable performance and durability. Whether you're working on industrial automation, consumer electronics, or automotive systems, the 2N490B delivers exceptional value and efficiency. Experience seamless operation and unmatched convenience with this versatile component. Unlock new possibilities and take your projects to the next level with the Texas Instruments 2N490B.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body ensures durability and heat dissipation, making the transistor suitable for high power applications.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures easy integration into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response and efficient operation in on/off scenarios.

Maximum Emitter Current: 70 mA

High maximum emitter current capability allows the transistor to handle larger loads without compromising performance.

Maximum Inter-base Voltage: 65 V

High maximum inter-base voltage rating provides protection against overvoltage situations, ensuring reliable operation in diverse conditions.

Maximum Power Dissipation (Abs): 0.45 W

Low power dissipation ensures energy-efficient performance and reduces the risk of overheating during operation.

Maximum Operating Temperature: 140 °C

Wide temperature range allows the transistor to operate effectively in both high and low temperature environments.

Minimum Operating Temperature: -65 °C

Wide temperature range allows the transistor to operate effectively in both high and low temperature environments.

Minimum Intrinsic Stand-off Ratio: 0.51

High minimum intrinsic stand-off ratio ensures reliable switching behavior and prevents unintentional triggering.

Maximum Static Inter-Base Resistance: 9.1 kohm

Low static inter-base resistance ensures efficient signal transmission and minimal signal loss in the circuit.

Maximum Intrinsic Stand-off Ratio: 0.62

High maximum intrinsic stand-off ratio improves the transistor's immunity to false triggering and enhances overall stability.

Minimum Static Inter-Base Resistance: 6.2 kohm

Low static inter-base resistance ensures efficient signal transmission and minimal signal loss in the circuit.

Minimum Valley Point Current: 8 mA

The minimum valley point current specification ensures precise control over the transistor's switching behavior, enhancing performance reliability.

Maximum Peak Point Current: 6 mA

The maximum peak point current specification determines the transistor's peak performance capability in switching applications, ensuring reliable operation under varying loads.

Technical Specifications

Unijunction Transistors (UFT) 2N490B attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.62

Minimum Intrinsic Stand-off Ratio:

.51

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

6 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

6.2 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N490B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-126-1794, 5961001261794

NIIN

001261794

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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