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2N493

Texas Instruments

2N493 by Texas Instruments

The Texas Instruments 2N493 is a Unijunction Transistor (UFT) with a max emitter current of 70mA, ideal for switching applications. It has a max inter-base voltage of 65V and can operate in temperatures ranging from -65 to 140°C. The transistor element material is silicon, with a package style that is cylindrical in shape.

Median Price

$28.770

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 129 parts In-Stock

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$28.770

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Digiode

USA . 4,728 parts In-Stock

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Vyrian

USA . 4,241 parts In-Stock

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ECAB

Sweden . 5 parts In-Stock

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Parana Technologies

USA . 1,064 parts In-Stock

1+ parts

$0.380

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$1.577

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1,064

$0.380

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$1.577

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DigiPath Technology Company

USA . 392 parts In-Stock

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$0.418

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$0.385

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392

$0.418

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ChromeModa Solutions

Germany . 1,017 parts In-Stock

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$0.427

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$0.350

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1,017

$0.427

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IDEA Electronic Components Group

UK . 368 parts In-Stock

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$0.427

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$0.384

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368

$0.427

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$0.384

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AZTECH Wire

Italy . 431 parts In-Stock

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$11.709

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431

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Native Components

USA . 861 parts In-Stock

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$15.506

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861

$15.506

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Northwest PG Solutions

USA . 391 parts In-Stock

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$17.057

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$15.351

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One Stop Electronics

USA . 323 parts In-Stock

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$39.050

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Corphita

USA . 4,170 parts In-Stock

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Assy Fe

Spain . 25 parts In-Stock

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RTC Component Inc.

USA . 1 parts In-Stock

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Overview

Unlock the power of reliable switching with the Texas Instruments 2N493 Unijunction Transistor. Manufactured by a trusted industry leader, this high-quality component is designed for seamless performance in a variety of applications. Whether you're working on industrial controls or electronic ignition systems, the 2N493 offers unmatched value and efficiency. Trust Texas Instruments to deliver superior products that meet your needs with precision and reliability. Elevate your projects with the 2N493 today!

Feature Benefit Bullets

Package Body Material: METAL

Provides durability and heat dissipation, making this product suitable for high temperature applications.

Configuration: SINGLE

Simplified design and easy integration into circuits.

Transistor Application: SWITCHING

Ideal for controlling power flow in electronic devices.

Maximum Emitter Current: 70 mA

Capable of handling higher current loads for robust performance.

Package Shape: ROUND

Compact design for space-saving installation.

Terminal Form: WIRE

Easy connection and installation in circuits.

Maximum Inter-base Voltage: 65 V

Provides a high voltage tolerance for reliable operation.

No. of Terminals: 3

Simple connectivity and integration within circuits.

Maximum Power Dissipation (Abs): 0.45 W

Efficient power handling capability for reliable performance.

Package Style (Meter): CYLINDRICAL

Unique design for specific installation requirements.

Maximum Operating Temperature: 140 °C

Can operate effectively in high-temperature environments.

Transistor Element Material: SILICON

Provides high conductivity and durability for long-lasting operation.

Minimum Operating Temperature: -65 °C

Capable of functioning in low-temperature environments.

Minimum Intrinsic Stand-off Ratio: 0.62

Ensures proper biasing for stable operation.

Maximum Static Inter-Base Resistance: 6.8 kohm

Provides reliable inter-base connections for consistent performance.

Terminal Position: BOTTOM

Simplifies circuit layout and connections.

Case Connection: ISOLATED

Prevents interference and ensures proper functionality.

Maximum Intrinsic Stand-off Ratio: 0.75

Allows for proper biasing and stable operation.

Minimum Static Inter-Base Resistance: 4.7 kohm

Ensures reliable connections and performance.

Minimum Valley Point Current: 8 mA

Key parameter for switching behavior in circuits.

Maximum Peak Point Current: 12 mA

Important for peak performance and current handling capabilities.

Technical Specifications

Unijunction Transistors (UFT) 2N493 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.75

Minimum Intrinsic Stand-off Ratio:

.62

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

12 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

6.8 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N493 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-807-1417, 5961008071417, 5961-00-950-9886, 5961009509886

NIIN

008071417, 009509886

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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