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2N494A

Texas Instruments

2N494A by Texas Instruments

2N494A by Texas Instruments is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. It is used in applications requiring a single configuration transistor for temperature ranges b/w -65 to 140°C.

Median Price

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Lifecycle Status

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5

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1k+

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Vyrian

USA . 5,925 parts In-Stock

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Digiode

USA . 2,758 parts In-Stock

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PUI

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Mil-Aero Solutions, Inc.

USA . 1 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 1 parts In-Stock

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Native Components

USA . 761 parts In-Stock

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$0.055

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$0.052

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Parana Technologies

USA . 2,021 parts In-Stock

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$1.048

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$1.910

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DigiPath Technology Company

USA . 674 parts In-Stock

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$1.153

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$1.061

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ChromeModa Solutions

Germany . 4,132 parts In-Stock

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$1.177

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$0.965

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IDEA Electronic Components Group

UK . 312 parts In-Stock

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$1.177

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$1.059

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One Stop Electronics

USA . 348 parts In-Stock

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$8.050

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AZTECH Wire

Italy . 782 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 5,377 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 2,287 parts In-Stock

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Northwest PG Solutions

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UHIMA Technologies

Türkiye . 542 parts In-Stock

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TANS Electronics

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Corohmni

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Overview

Enhance your electronic projects with the reliable 2N494A by Texas Instruments, a top-quality Unijunction Transistor renowned for its precision and durability. Crafted with cutting-edge technology and expertise, this single configuration transistor offers exceptional performance in various applications, ensuring optimal efficiency and functionality. Experience the value and benefits of this product firsthand, as it delivers superior results while maximizing power dissipation and operating temperature ranges. Trust Texas Instruments to provide you with the tools you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide better heat dissipation, making the transistor more reliable and durable in high-temperature environments.

Maximum Emitter Current: 70 mA

High maximum emitter current allows for greater flexibility in circuit design and can handle higher loads.

Package Shape: ROUND

Round package shape is compact and easy to mount, making it suitable for space-constrained applications.

Maximum Inter-base Voltage: 65 V

Higher inter-base voltage tolerance provides better protection against voltage spikes and fluctuations in the circuit.

Maximum Power Dissipation (Abs): 0.45 W

High power dissipation capability allows the transistor to handle higher power levels without overheating.

Maximum Operating Temperature: 140 °C

Wide operating temperature range makes this transistor suitable for applications where temperature variations are common.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them ideal for demanding applications.

Technical Specifications

Unijunction Transistors (UFT) 2N494A attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.75

Minimum Intrinsic Stand-off Ratio:

.62

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

15 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

6.2 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N494A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-835-6448, 5961008356448, 5961-99-651-8802, 5961996518802

NIIN

008356448, 996518802

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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