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2N494

Texas Instruments

2N494 by Texas Instruments

The Texas Instruments 2N494 is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. It is used in applications requiring a single configuration transistor for temperature range -65 to 140°C.

Median Price

$14.400

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 3 parts In-Stock

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$14.400

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$14.400

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Vyrian

USA . 4,440 parts In-Stock

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Digiode

USA . 2,767 parts In-Stock

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2,767

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Electronics Depot

USA . 9 parts In-Stock

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Sunrise Surplus Inc.

USA . 6 parts In-Stock

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6

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PUI

USA . 5 parts In-Stock

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Electronic Expediters

USA . 3 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 537 parts In-Stock

1+ parts

$0.240

100+ parts

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$0.230

537

$0.240

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$0.230

Northwest PG Solutions

USA . 375 parts In-Stock

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$0.264

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$0.233

375

$0.264

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$0.233

Parana Technologies

USA . 1,415 parts In-Stock

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$0.844

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$1.802

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1,415

$0.844

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$1.802

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DigiPath Technology Company

USA . 695 parts In-Stock

1+ parts

$0.929

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$0.855

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695

$0.929

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ChromeModa Solutions

Germany . 1,917 parts In-Stock

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$0.948

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$0.777

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IDEA Electronic Components Group

UK . 1,027 parts In-Stock

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$0.948

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$0.853

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1,027

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$0.853

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AZTECH Wire

Italy . 882 parts In-Stock

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$12.065

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$12.065

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One Stop Electronics

USA . 1,050 parts In-Stock

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$25.050

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$25.050

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Corphita

USA . 4,485 parts In-Stock

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Overview

Looking for a reliable and high-quality Unijunction Transistor? Look no further than the 2N494 by Texas Instruments! With a trusted manufacturer like Texas Instruments, you can expect nothing short of excellence. This versatile component is perfect for a wide range of applications, offering customers exceptional value and performance. Trust in the 2N494 to deliver top-notch results every time, making it the ideal choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide excellent heat dissipation, ensuring optimal performance and reliability.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to work with.

Maximum Emitter Current: 70 mA

High maximum emitter current allows for versatile applications and robust performance.

Package Shape: ROUND

Round package shape is compact and space-saving, ideal for applications with limited board space.

Terminal Form: WIRE

Wire terminals offer easy connectivity and flexibility in mounting options.

Maximum Inter-base Voltage: 65 V

High maximum inter-base voltage provides safety margin and protection against voltage spikes.

No. of Terminals: 3

Three terminals offer versatile connection options and compatibility with various circuit configurations.

Maximum Power Dissipation (Abs): 0.45 W

Low maximum power dissipation ensures efficient operation and minimizes heat generation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is sturdy and durable, suitable for demanding environments.

Maximum Operating Temperature: 140 °C

High maximum operating temperature allows for reliable performance in a wide range of conditions.

Transistor Element Material: SILICON

Silicon transistor element material offers high reliability and performance for long-term use.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures functionality in extreme cold environments.

Minimum Intrinsic Stand-off Ratio: 0.62

High intrinsic stand-off ratio provides stability and prevents false triggering in the circuit.

Maximum Static Inter-Base Resistance: 9.1 kohm

Low static inter-base resistance ensures efficient signal transfer and minimal power loss.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy installation and connection in circuit boards.

Maximum Intrinsic Stand-off Ratio: 0.75

High intrinsic stand-off ratio provides reliable operation and protection against interference.

Minimum Static Inter-Base Resistance: 6.2 kohm

Low static inter-base resistance ensures accurate signal transmission and minimal signal distortion.

Minimum Valley Point Current: 12 mA

Higher minimum valley point current ensures stability and reliable operation in the circuit.

Maximum Peak Point Current: 2 mA

Low maximum peak point current ensures safe operation and protects the device from overloads.

Technical Specifications

Unijunction Transistors (UFT) 2N494 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.75

Minimum Intrinsic Stand-off Ratio:

.62

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

2 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

6.2 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Minimum Valley Point Current:

12 mA

Trade Compliance

2N494 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-439-3542, 5961004393542, 5961-00-807-7885, 5961008077885

NIIN

004393542, 008077885

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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