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2N2646

Texas Instruments

2N2646 by Texas Instruments

2N2646 by Texas Instruments is a Unijunction Transistor (UFT) with a max emitter current of 50mA, ideal for switching applications. It has a max operating temperature of 125°C and min intrinsic stand-off ratio of 0.56, making it suitable for various electronic circuits. With a package style of cylindrical and terminal form as wire, it offers reliable performance in diverse environments.

Median Price

$4.740

Lifecycle Status

Suppliers In-Stock

58

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS Americas

USA . 64 parts In-Stock

1+ parts

$2.440

100+ parts

$1.950

1k+ parts

$1.590

10k+ parts

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64

$2.440

$1.950

$1.590

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Master Electronics

USA . 1 parts In-Stock

1+ parts

$7.040

100+ parts

$4.360

1k+ parts

$3.740

10k+ parts

$3.720

1

$7.040

$4.360

$3.740

$3.720

Verical

USA . 15 parts In-Stock

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TEDSS.com

USA . 440 parts In-Stock

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$1.850

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$1.120

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$1.850

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Digiode

USA . 5,089 parts In-Stock

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$2.318

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NAC Semi

USA . 3,290 parts In-Stock

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$2.500

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$1.990

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Freelance Electronics

USA . 328 parts In-Stock

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$5.472

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$6.566

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$5.417

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$5.472

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Nova Conductors

Japan . 200 parts In-Stock

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Electro Sonic

Canada . 1 parts In-Stock

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$7.630

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$5.290

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$4.710

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$4.640

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American Microsemiconductor Inc.

USA . 9,817 parts In-Stock

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$9.500

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DF Sales Co.

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Bristol Electronics

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DigiKey Marketplace

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Belgium . 1,893 parts In-Stock

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LIBRA Elektronik GmbH

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Legend Electronics Inc.

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Amar Radio Corporation

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LittleDiode

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Atlantic Semiconductor

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Mil-Aero Solutions, Inc.

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Standard Data Resources

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Elcom Components

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GES GmbH

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J & M Industries LLC

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ZD Integrated Circuits Inc.

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Mentor Electronics Marketing, LLC

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Zilex Electronics Inc.

Canada . 22 parts In-Stock

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4 Star Electronics, Inc.

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A2Z Electronics, Inc.

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Resion

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EPE Components Inc.

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Prism Electronics

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PC Components Company LLC

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MISTER SPROCKETS

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Connector Distribution Corp

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Right Parts Inc.

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France . 2 parts In-Stock

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Sensible Micro Corp

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Goldney Electronics S.L.

Spain . 1 parts In-Stock

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Sunrise Surplus Inc.

USA . 1 parts In-Stock

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EMSNET

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Distributors (Availability)

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Parana Technologies

USA . 1,497 parts In-Stock

1+ parts

$0.434

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1k+ parts

$1.602

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1,497

$0.434

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$1.602

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DigiPath Technology Company

USA . 711 parts In-Stock

1+ parts

$0.478

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$0.440

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711

$0.478

$0.440

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ChromeModa Solutions

Germany . 6,010 parts In-Stock

1+ parts

$0.488

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$0.400

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6,010

$0.488

$0.400

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IDEA Electronic Components Group

UK . 452 parts In-Stock

1+ parts

$0.488

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$0.439

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452

$0.488

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$0.439

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Component Stockers USA

USA . 20,081 parts In-Stock

1+ parts

$1.590

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$1.240

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$1.240

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$1.590

$1.240

$1.240

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Corphita

USA . 3,354 parts In-Stock

1+ parts

$2.196

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3,354

$2.196

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Allen Electronics Distributors

USA . 44 parts In-Stock

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$2.230

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$2.030

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44

$2.230

$2.030

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Continental Prestige Electronics

USA . 409 parts In-Stock

1+ parts

$6.540

100+ parts

$3.630

1k+ parts

$2.040

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409

$6.540

$3.630

$2.040

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Microchip USA

USA . 6,593 parts In-Stock

1+ parts

$8.385

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6,593

$8.385

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AZTECH Wire

Italy . 547 parts In-Stock

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$13.897

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547

$13.897

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Infinite Electronics LLP (Excess)

. 20,002 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,323 parts In-Stock

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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Argo Parts USA

USA . 4,188 parts In-Stock

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Glotronic Ltd.

UK . 2,500 parts In-Stock

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UNI Independent Distributors

Spain . 2,460 parts In-Stock

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Robosynatics

Brazil . 300 parts In-Stock

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$0.172

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$0.172

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$0.172

$0.172

$0.172

Lucentia Tech

USA . 300 parts In-Stock

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$0.172

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$0.172

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$0.172

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Fulton Briggs Corp.

USA . 212 parts In-Stock

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New Zealand . 100 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$6.458

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$6.261

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$6.129

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$6.129

Perfect Parts

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Overview

Discover the power of the Texas Instruments 2N2646 Unijunction Transistor, a high-quality component that offers reliable switching capabilities in a sleek round package. With a maximum emitter current of 50 mA and impressive power dissipation, this transistor is perfect for a variety of applications. From industrial automation to consumer electronics, the 2N2646 delivers exceptional performance and durability. Trust in Texas Instruments' reputation for excellence and upgrade your designs with this versatile and efficient transistor today. Experience the value and benefits that only the 2N2646 can offer.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and heat dissipation, making it suitable for high-power applications.

Configuration: SINGLE

Single configuration simplifies design and reduces component count, making it easier to integrate into circuits.

Transistor Application: SWITCHING

Designed for switching applications, providing fast on/off capability for efficient performance.

Maximum Emitter Current: 50 mA

Capable of handling high emitter current, suitable for applications that require higher current ratings.

Package Shape: ROUND

Round package shape allows for easy mounting and compact PCB layout.

Terminal Form: WIRE

Wire terminal form enables easy connection and flexibility in circuit designs.

Maximum Inter-base Voltage: 35 V

High inter-base voltage rating allows for operation in higher voltage circuits.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and enable various configurations.

Maximum Power Dissipation (Abs): 0.3 W

Capable of dissipating power efficiently, suitable for high-power applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides compactness and easy mounting options in circuits.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for use in a wide range of environments.

Transistor Element Material: SILICON

Silicon material provides reliability and performance advantages in transistor operation.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for operation in harsh environmental conditions.

Minimum Intrinsic Stand-off Ratio: 0.56

Low intrinsic stand-off ratio enables precise control of switching characteristics.

Maximum Static Inter-Base Resistance: 9.1 kohm

High inter-base resistance allows for stable operation and prevents leakage currents.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and connection in circuits.

Case Connection: BASE2

Base2 case connection provides reliable grounding and thermal dissipation for the transistor.

Maximum Intrinsic Stand-off Ratio: 0.75

High intrinsic stand-off ratio enables precise control and stability in switching applications.

Minimum Static Inter-Base Resistance: 4.7 kohm

Low static inter-base resistance allows for efficient operation and minimal power losses.

Minimum Valley Point Current: 4 mA

Low valley point current ensures reliable switching performance and prevents false triggering.

Maximum Peak Point Current: 5 mA

High peak point current rating allows for handling transient currents without damaging the transistor.

Technical Specifications

Unijunction Transistors (UFT) 2N2646 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

BASE2

Configuration:

Maximum Emitter Current:

50 mA

Maximum Inter-base Voltage:

35 V

Maximum Intrinsic Stand-off Ratio:

.75

Minimum Intrinsic Stand-off Ratio:

.56

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

5 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

4 mA

Trade Compliance

2N2646 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-925-9121, 5961009259121, 5961-00-902-1177, 5961009021177, 5961-99-627-9078, 5961996279078, 5961-99-118-1068, 5961991181068, 5961-99-623-1016, 5961996231016, 5961-99-118-3755, 5961991183755, 5961-99-739-7377, 5961997397377, 5961-99-795-7700, 5961997957700

NIIN

009259121, 009021177, 996279078, 991181068, 996231016, 991183755, 997397377, 997957700

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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