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P2647

Onsemi

P2647 by Onsemi

P2647 by Onsemi is a Unijunction Transistor with key specs: Min. Intrinsic Stand-off Ratio 0.68, Max. Static Inter-Base Resistance 9.1 kohm, and Min. Valley Point Current 4 mA. It is used in applications requiring precise triggering and timing control in electronic circuits.

Median Price

$85.310

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 5 parts In-Stock

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$85.310

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Vyrian

USA . 1,354 parts In-Stock

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1,354

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Digiode

USA . 505 parts In-Stock

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505

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Microfarads

USA . 184 parts In-Stock

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184

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 306 parts In-Stock

1+ parts

$85.310

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306

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SupplyDigital Components

Austria . 7,109 parts In-Stock

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Kulean Microsystems

USA . 2,516 parts In-Stock

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Corphita

USA . 2,200 parts In-Stock

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Problanco Electronics

Mexico . 1,958 parts In-Stock

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TANS Electronics

Latvia . 975 parts In-Stock

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UHIMA Technologies

Türkiye . 592 parts In-Stock

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Overview

Experience superior performance and reliability with the P2647 Unijunction Transistor by Onsemi. Known for their high-quality components, Onsemi delivers cutting-edge technology in the field of Unijunction Transistors. Perfect for a wide range of applications, this product offers unmatched value and benefits to customers looking for efficiency and precision in their electronic devices. Trust Onsemi to provide you with the best solutions for all your electronic needs.

Feature Benefit Bullets

Minimum Intrinsic Stand-off Ratio: 0.68

A high minimum intrinsic stand-off ratio of 0.68 ensures reliable performance and stability in the circuit, making this UFT a dependable choice for various applications.

Maximum Static Inter-Base Resistance: 9.1 kohm

With a maximum static inter-base resistance of 9.1 kohm, this UFT offers efficient conduction and minimal signal loss, enhancing overall performance and signal integrity.

Maximum Intrinsic Stand-off Ratio: 0.82

The maximum intrinsic stand-off ratio of 0.82 indicates a well-designed and balanced UFT, providing consistent and accurate operation for the circuit.

Minimum Static Inter-Base Resistance: 4.7 kohm

The low minimum static inter-base resistance of 4.7 kohm enables smooth and efficient current flow within the circuit, ensuring optimal functionality and output.

Minimum Valley Point Current: 4 mA

The minimum valley point current of 4 mA indicates a stable operating point for the UFT, allowing for precise control and modulation of currents in the circuit.

Maximum Peak Point Current: 5 mA

With a maximum peak point current of 5 mA, this UFT can handle higher current spikes or surges, making it suitable for applications with varying current demands.

Technical Specifications

Unijunction Transistors (UFT) P2647 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Maximum Intrinsic Stand-off Ratio:

.82

Minimum Intrinsic Stand-off Ratio:

.68

Maximum Peak Point Current:

5 mA

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Minimum Valley Point Current:

4 mA

Trade Compliance

P2647 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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