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P2646

Onsemi

P2646 by Onsemi

Onsemi's P2646 is a Unijunction Transistor with key specs: Min. Stand-off Ratio 0.56, Max. Inter-Base Resistance 9.1 kohm, Min. Valley Point Current 4 mA. Ideal for applications requiring precise triggering and control in electronic circuits.

Median Price

$174.560

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 5 parts In-Stock

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Vyrian

USA . 1,458 parts In-Stock

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Digiode

USA . 753 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 13 parts In-Stock

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Corohmni

South Africa . 333 parts In-Stock

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$174.560

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Kulean Microsystems

USA . 5,923 parts In-Stock

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TANS Electronics

Latvia . 3,198 parts In-Stock

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UHIMA Technologies

Türkiye . 667 parts In-Stock

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Corphita

USA . 630 parts In-Stock

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SupplyDigital Components

Austria . 597 parts In-Stock

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Problanco Electronics

Mexico . 559 parts In-Stock

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Overview

Elevate your electronic designs with the P2646 Unijunction Transistor by Onsemi. Known for their superior quality and reliability, Onsemi has crafted a product that exceeds industry standards with a minimum intrinsic stand-off ratio of 0.56 and maximum static inter-base resistance of 9.1 kohm. Perfect for a wide range of applications, this transistor offers unparalleled performance and efficiency, making it a must-have for any tech-savvy consumer looking to take their projects to the next level. Experience the difference with Onsemi's P2646 - where innovation meets excellence.

Feature Benefit Bullets

Minimum Intrinsic Stand-off Ratio: 0.56

This ensures a stable operation and prevents premature firing, making the product reliable and efficient.

Maximum Static Inter-Base Resistance: 9.1 kohm

With a high inter-base resistance, the product offers improved isolation and reduced leakage currents, enhancing its performance in various applications.

Maximum Intrinsic Stand-off Ratio: 0.75

A higher intrinsic stand-off ratio allows for better control over triggering, leading to precise operation and better overall performance.

Minimum Static Inter-Base Resistance: 4.7 kohm

The low static inter-base resistance results in reduced power consumption and improved efficiency, making it an ideal choice for power-sensitive applications.

Minimum Valley Point Current: 4 mA

The minimum valley point current ensures a smooth transition during triggering, minimizing voltage spikes and improving the stability of the product.

Maximum Peak Point Current: 5 mA

With a maximum peak point current of 5 mA, the product can handle high current requirements without risking damage, making it a reliable choice for demanding applications.

Technical Specifications

Unijunction Transistors (UFT) P2646 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Maximum Intrinsic Stand-off Ratio:

.75

Minimum Intrinsic Stand-off Ratio:

.56

Maximum Peak Point Current:

5 mA

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Minimum Valley Point Current:

4 mA

Trade Compliance

P2646 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5130-21-905-9776, 5130219059776, 5365-00-353-2596, 5365003532596, 5925-01-073-3409, 5925010733409

NIIN

219059776, 003532596, 010733409

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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