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TIS43

Texas Instruments

TIS43 by Texas Instruments

TIS43 by Texas Instruments is a Unijunction Transistor (UFT) with a max power dissipation of 0.36W, ideal for switching applications. It features a single configuration, silicon transistor element material, and 3 wire terminals in a cylindrical package shape. With a max static inter-base resistance of 9.1 kohm and min valley point current of 2 mA, it offers reliable performance for various electronic circuits.

Median Price

$7.350

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Forefront Electronics and Design

USA . 2 parts In-Stock

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$7.350

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Vyrian

USA . 5,841 parts In-Stock

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Digiode

USA . 3,715 parts In-Stock

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Pegasus Components GmbH

Germany . 866 parts In-Stock

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866

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Electronic Expediters

USA . 155 parts In-Stock

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LittleDiode

UK . 105 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 23 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 11 parts In-Stock

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Sinequanon

UK . 2 parts In-Stock

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MISTER SPROCKETS

USA . 1 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 802 parts In-Stock

1+ parts

$0.963

100+ parts

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$1.862

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802

$0.963

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$1.862

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DigiPath Technology Company

USA . 2,199 parts In-Stock

1+ parts

$1.060

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$0.976

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$1.060

$0.976

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IDEA Electronic Components Group

UK . 2,364 parts In-Stock

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$1.082

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$0.974

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2,364

$1.082

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ChromeModa Solutions

Germany . 1,161 parts In-Stock

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$1.082

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$0.887

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$1.082

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AZTECH Wire

Italy . 666 parts In-Stock

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$10.346

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666

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One Stop Electronics

USA . 630 parts In-Stock

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$44.050

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630

$44.050

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Corphita

USA . 2,598 parts In-Stock

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Assy Fe

Spain . 121 parts In-Stock

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Overview

Elevate your switching applications with the TIS43 by Texas Instruments. As a leading manufacturer of high-quality unijunction transistors, Texas Instruments delivers reliable performance and durability. The TIS43 offers customers unparalleled value with its efficient power dissipation and superior silicon construction. Whether you're looking to optimize your electronic circuits or enhance your industrial automation systems, the TIS43 is the ideal solution for all your switching needs. Upgrade to Texas Instruments and experience the difference in quality and performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and reliable protection for the semiconductor components inside, ensuring a longer lifespan for the product.

Configuration: SINGLE

Simplifies the design and usage of the transistor, making it easy to integrate into circuits and systems.

Transistor Application: SWITCHING

Suitable for high-speed switching operations, making it versatile for various electronic applications.

Package Shape: ROUND

Allows for easy mounting and installation in round or cylindrical spaces, increasing flexibility in design.

Terminal Form: WIRE

Facilitates easy connections and soldering, ensuring a reliable electrical connection in circuits.

No. of Terminals: 3

Provides the necessary connections for proper operation while keeping the transistor compact and efficient.

Maximum Power Dissipation (Abs): 0.36 W

Can handle relatively high power levels, ensuring stability and reliability in operation.

Package Style (Meter): CYLINDRICAL

Fits well in cylindrical packages, suitable for applications where space is a constraint.

Transistor Element Material: SILICON

Delivers efficient and consistent performance, common in modern semiconductor devices.

Maximum Static Inter-Base Resistance: 9.1 kohm

Low resistance for inter-base connections, ensuring efficient signal transfer and minimal losses.

Terminal Position: BOTTOM

Facilitates easy mounting and circuit integration, simplifying the installation process.

Maximum Intrinsic Stand-off Ratio: 0.82

Provides a high standoff ratio, ensuring reliable and stable operation in various conditions.

Minimum Valley Point Current: 2 mA

Suitable for low-current operations, making it ideal for applications requiring precise control and sensitivity.

Maximum Peak Point Current: 5 mA

Can handle peak currents effectively, suitable for switching applications that require temporary high current flow.

Technical Specifications

Unijunction Transistors (UFT) TIS43 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Configuration:

Maximum Intrinsic Stand-off Ratio:

.82

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

5 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

2 mA

Trade Compliance

TIS43 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-879-7446, 5961008797446, 5961-14-316-8752, 5961143168752

NIIN

008797446, 143168752

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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