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2N2419B

Onsemi

2N2419B by Onsemi

The Onsemi 2N2419B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for functions like pulse generation or timing circuits.

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

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Digiode

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PUI

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SupplyDigital Components

Austria . 6,151 parts In-Stock

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TANS Electronics

Latvia . 3,543 parts In-Stock

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Problanco Electronics

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Corphita

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Kulean Microsystems

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Northwest PG Solutions

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UHIMA Technologies

Türkiye . 299 parts In-Stock

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Corohmni

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Native Components

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Overview

Unlock the power of innovation with the 2N2419B Unijunction Transistor from Onsemi. Renowned for their quality and reliability, Onsemi delivers cutting-edge technology that exceeds expectations. Ideal for a wide range of applications, this single configuration transistor offers customers unmatched value and performance. Take your projects to the next level with the 2N2419B and experience the advantages of superior design and functionality. Trust Onsemi to provide the solutions you need for success.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and protection for the transistor, ensuring long-lasting performance in various environmental conditions.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to incorporate this transistor into a circuit.

Maximum Emitter Current: 70 mA

High maximum emitter current allows for efficient operation and handling of larger current loads.

Package Shape: ROUND

Round package shape is compact and space-saving, ideal for applications where size is a critical factor.

Terminal Form: WIRE

Wire terminal form provides secure connections and ease of soldering during installation.

Maximum Inter-base Voltage: 65 V

High maximum inter-base voltage tolerance ensures reliability and protection against voltage spikes.

No. of Terminals: 3

Three terminals provide versatility and flexibility in circuit connections, allowing for a wide range of applications.

Maximum Power Dissipation (Abs): 0.3 W

Low power dissipation helps in reducing heat generation and energy consumption, leading to higher efficiency.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is easy to mount and provides mechanical stability in various mounting configurations.

Maximum Operating Temperature: 140 °C

High maximum operating temperature range allows for operation in harsh environments without compromising performance.

Transistor Element Material: SILICON

Silicon material for the transistor element offers high reliability, low leakage, and better performance characteristics.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for operation in extremely cold conditions without failure.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides corrosion resistance and robust solder joints for reliable connections.

Minimum Intrinsic Stand-off Ratio: 0.56

Higher minimum intrinsic stand-off ratio indicates better stability and reliability in circuit protection.

Maximum Static Inter-Base Resistance: 6.8 kohm

Higher maximum static inter-base resistance ensures efficient isolation between bases for optimal performance.

Terminal Position: BOTTOM

Bottom terminal position aids in easier mounting and soldering for convenient installation.

Maximum Intrinsic Stand-off Ratio: 0.68

Higher maximum intrinsic stand-off ratio provides enhanced protection against voltage transients and surges.

Minimum Static Inter-Base Resistance: 4.7 kohm

Lower minimum static inter-base resistance contributes to reduced voltage drop and improved efficiency in circuit operation.

Minimum Valley Point Current: 8 mA

Higher minimum valley point current ensures stable operation and prevents false triggering in the transistor.

Maximum Peak Point Current: 6 mA

Lower maximum peak point current limits the stress on the transistor during peak load conditions, contributing to longer lifespan.

Technical Specifications

Unijunction Transistors (UFT) 2N2419B attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.68

Minimum Intrinsic Stand-off Ratio:

.56

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

6 mA

Maximum Power Dissipation (Abs):

Maximum Static Inter-Base Resistance:

6.8 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N2419B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-766-2947, 5961007662947, 5961-00-955-5290, 5961009555290

NIIN

007662947, 009555290

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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