Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The Onsemi 2N2419B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for functions like pulse generation or timing circuits.
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Metal package provides durability and protection for the transistor, ensuring long-lasting performance in various environmental conditions.
Single configuration simplifies circuit design and integration, making it easier to incorporate this transistor into a circuit.
High maximum emitter current allows for efficient operation and handling of larger current loads.
Round package shape is compact and space-saving, ideal for applications where size is a critical factor.
Wire terminal form provides secure connections and ease of soldering during installation.
High maximum inter-base voltage tolerance ensures reliability and protection against voltage spikes.
Three terminals provide versatility and flexibility in circuit connections, allowing for a wide range of applications.
Low power dissipation helps in reducing heat generation and energy consumption, leading to higher efficiency.
Cylindrical package style is easy to mount and provides mechanical stability in various mounting configurations.
High maximum operating temperature range allows for operation in harsh environments without compromising performance.
Silicon material for the transistor element offers high reliability, low leakage, and better performance characteristics.
Low minimum operating temperature allows for operation in extremely cold conditions without failure.
Tin/Lead terminal finish provides corrosion resistance and robust solder joints for reliable connections.
Higher minimum intrinsic stand-off ratio indicates better stability and reliability in circuit protection.
Higher maximum static inter-base resistance ensures efficient isolation between bases for optimal performance.
Bottom terminal position aids in easier mounting and soldering for convenient installation.
Higher maximum intrinsic stand-off ratio provides enhanced protection against voltage transients and surges.
Lower minimum static inter-base resistance contributes to reduced voltage drop and improved efficiency in circuit operation.
Higher minimum valley point current ensures stable operation and prevents false triggering in the transistor.
Lower maximum peak point current limits the stress on the transistor during peak load conditions, contributing to longer lifespan.
Unijunction Transistors (UFT) 2N2419B attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi
Configuration:
Maximum Emitter Current:
Maximum Inter-base Voltage:
Maximum Intrinsic Stand-off Ratio:
Minimum Intrinsic Stand-off Ratio:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Maximum Peak Point Current:
Maximum Power Dissipation (Abs):
Maximum Static Inter-Base Resistance:
Minimum Static Inter-Base Resistance:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Element Material:
Minimum Valley Point Current:
2N2419B Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-00-766-2947, 5961007662947, 5961-00-955-5290, 5961009555290
NIIN
007662947, 009555290
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N7002,215
NXP Semiconductors
2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.
ST3485EBDR
STMicroelectronics
ST3485EBDR by STMicroelectronics is a Line Driver & Receiver with 3.3V power supply, EIA-422/EIA-485 interface standard, and 30ns max transmit delay. It is ideal for industrial applications requiring differential output and operates in temperatures ranging from -40 to 85°C.
2N2222A
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
2N7002
Itt Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
RC0402FR-071KL
Yageo
The Yageo RC0402FR-071KL is a fixed resistor with a resistance of 1000 ohm and a tolerance of 1%. It is suitable for surface mount applications and has a max operating temperature of 155 °C.
1N4148
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
LM7805CT
Silicon Group
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;
LM358AN
Texas Instruments
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
FDC5614P
TAIZHOU ELECTRONICS CO LTD
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
BSS138
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
FDLL4148
National Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
New Jersey Semiconductor Products
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
CRG0805F10R
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
LM358N
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
NDT2955
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;
Onsemi
FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.
Kec
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Non Repetitive Peak Forward Current: 2 A; Config: SINGLE; Maximum Operating Temperature: 200 Cel;
Transys Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;
FDV304P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
2N2646
Asi Semiconductor
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JEDEC-95 Code: TO-18; No. of Elements: 1;
Digitron Semiconductors
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Style (Meter): CYLINDRICAL; Maximum Operating Temperature: 125 Cel;
2N494C
The Onsemi 2N494C is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. Ideal for low-power switching circuits due to its silicon element material and operating temperature range from -65 °C to 140°C.
2N4947
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Peak Point Current: 2 mA; Minimum Intrinsic Stand-off Ratio: .51;
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Elements: 1; Package Body Material: METAL;
2N2421A
The Onsemi 2N2421A is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for temperature range -65 to 140 °C, such as pulse generators and timing circuits.
2N4870
Crimson Semiconductor
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Inter-base Voltage: 35 V; Transistor Element Material: SILICON;
2SH14
Toshiba
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Peak Point Current: 2000000 mA; Minimum Valley Point Current: 50 mA; Maximum Emitter Current: 50 mA;
Harris Semiconductor
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Intrinsic Stand-off Ratio: .75; Maximum Emitter Current: 50 mA; Maximum Peak Point Current: 5 mA;
Central Semiconductor
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
North American Philips Discrete Products Div
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum Intrinsic Stand-off Ratio: .56; Maximum Inter-base Voltage: 35 V; Minimum Static Inter-Base Resistance: 4.7 kohm;
2N491
The Texas Instruments 2N491 is a Unijunction Transistor (UFT) with a max emitter current of 70mA and max power dissipation of 0.45W. It is commonly used for switching applications due to its single configuration and silicon transistor element material. Operating temperature ranges from -65°C to 140°C, making it suitable for various electronic devices.
2N4893
2N4893 by Texas Instruments is a Unijunction Transistor (UFT) with a max emitter current of 50mA and max power dissipation of 0.3W. It is commonly used for switching applications due to its single configuration and silicon element material, operating in temperatures ranging from -55°C to 150°C.
2N4946
Unijunction Transistors; Configuration: SINGLE; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Element Material: SILICON;
2N4894
The Texas Instruments 2N4894 is a Unijunction Transistor (UFT) with a max emitter current of 50mA and max power dissipation of 0.3W. It is commonly used for switching applications due to its single configuration, silicon element material, and operating temperature range from -55°C to 150°C.
2N4852
2N4852 by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 50mA, operating temperature range from -65 to 125°C, and max power dissipation of 0.3W. With a package style of cylindrical and terminal form wire, it offers reliable performance in various electronic circuits.
Comset Semiconductors
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Emitter Current: 50 mA; Maximum Peak Point Current: 5 mA; Maximum Inter-base Voltage: 35 V;
Boca Semiconductor
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Peak Point Current: 5 mA; Maximum Intrinsic Stand-off Ratio: .75; Maximum Inter-base Voltage: 35 V;
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Inter-base Voltage: 35 V; Maximum Static Inter-Base Resistance: 9.1 kohm; Minimum Static Inter-Base Resistance: 4.7 kohm;
W4893
The Onsemi W4893 is a Unijunction Transistor with key specs: Min. Intrinsic Stand-off Ratio 0.55, Max. Static Inter-Base Resistance 12 kohm, and Min. Valley Point Current 2 mA. It is used in applications requiring precise triggering and timing control in electronic circuits.
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2N2417A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Shape: ROUND; Minimum Operating Temperature: -65 Cel;
2N2417B
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: METAL; Transistor Element Material: SILICON;
2N2418A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Shape: ROUND; JEDEC-95 Code: TO-18;
2N2418B
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum Static Inter-Base Resistance: 6.2 kohm; Maximum Intrinsic Stand-off Ratio: .62;
2N2419A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Package Body Material: METAL;
2N2420A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Position: BOTTOM; Package Body Material: METAL;
2N2420B
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Intrinsic Stand-off Ratio: .68; Package Body Material: METAL;
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Maximum Peak Point Current: 12 mA;
2N2421B
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Maximum Intrinsic Stand-off Ratio: .75;
2N2422A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; Maximum Emitter Current: 70 mA;
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; JESD-30 Code: O-MBCY-W3; Package Body Material: METAL;
2N2417
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JEDEC-95 Code: TO-18; Minimum Operating Temperature: -65 Cel;
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; Terminal Position: BOTTOM;
2N2418
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Static Inter-Base Resistance: 9.1 kohm; Maximum Emitter Current: 70 mA;
2N2419
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Static Inter-Base Resistance: 6.8 kohm; Package Body Material: METAL;
2N2419-PBF
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; No. of Terminals: 3; Maximum Static Inter-Base Resistance: 6.8 kohm;
2N2417AHR
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Transistor Element Material: SILICON; Maximum Peak Point Current: 12 mA;
2N2418BHR
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Package Body Material: METAL; Terminal Position: BOTTOM;
2N2417B-PBF
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; JEDEC-95 Code: TO-18; Package Style (Meter): CYLINDRICAL;
2N2418HR
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Additional Features: HIGH RELIABILITY; Maximum Inter-base Voltage: 65 V;
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