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2N2421B

Onsemi

2N2421B by Onsemi

The Onsemi 2N2421B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration UFT for temperature range -65 to 140 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 2,376 parts In-Stock

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Vyrian

USA . 691 parts In-Stock

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Corel Iberica Componentes, S.L.

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TANS Electronics

Latvia . 6,609 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

Austria . 3,846 parts In-Stock

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Kulean Microsystems

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Corphita

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Northwest PG Solutions

USA . 772 parts In-Stock

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UHIMA Technologies

Türkiye . 186 parts In-Stock

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Corohmni

South Africa . 139 parts In-Stock

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Native Components

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Assy Fe

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Overview

Get ready to experience top-notch quality and superior performance with the Onsemi 2N2421B Unijunction Transistor. Manufactured by the renowned Onsemi brand, this single configuration transistor offers unmatched reliability and precision. Perfect for a wide range of applications, this transistor provides exceptional value and benefits to customers looking for high-quality components. Whether you're a hobbyist or a professional, the Onsemi 2N2421B is sure to exceed your expectations and deliver outstanding results every time. Elevate your projects with this exceptional product today!

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and efficient heat dissipation, ensuring reliable performance of the transistor.

Maximum Emitter Current: 70 mA

High maximum emitter current allows for handling of higher currents, making this transistor suitable for a variety of applications.

Maximum Inter-base Voltage: 65 V

The high maximum inter-base voltage rating ensures the transistor can handle higher voltage levels without breakdown, increasing its versatility.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle power efficiently, making it reliable under various operating conditions.

Maximum Operating Temperature: 140 °C

A high maximum operating temperature of 140 °C allows the transistor to operate in harsh environments without performance degradation, enhancing its reliability.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65 °C enables the transistor to function effectively in cold conditions, increasing its usability in diverse applications.

Minimum Static Inter-Base Resistance: 4.7 kohm

Low minimum static inter-base resistance results in efficient signal transfer and reduces power losses, making the transistor energy-efficient.

Minimum Valley Point Current: 8 mA

The minimum valley point current of 8 mA ensures stable operation in the cutoff region, improving the overall performance of the transistor.

Technical Specifications

Unijunction Transistors (UFT) 2N2421B attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.75

Minimum Intrinsic Stand-off Ratio:

.62

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

6 mA

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

6.8 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N2421B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-964-4469, 5961009644469

NIIN

009644469

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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