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2N489B

Texas Instruments

2N489B by Texas Instruments

2N489B by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, operating temperature range of -65 to 140°C, and max power dissipation of 0.45W. With a package style of cylindrical and isolated case connection, it offers reliable performance in various electronic circuits.

Median Price

$84.905

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 2 parts In-Stock

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$70.000

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2

$70.000

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American Microsemiconductor Inc.

USA . 8 parts In-Stock

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$99.810

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$99.810

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Vyrian

USA . 7,991 parts In-Stock

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7,991

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Digiode

USA . 1,918 parts In-Stock

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Electronics Depot

USA . 1 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 1,177 parts In-Stock

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$0.211

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$0.203

1,177

$0.211

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$0.203

Northwest PG Solutions

USA . 2,137 parts In-Stock

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$0.232

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$0.205

2,137

$0.232

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$0.205

Parana Technologies

USA . 267 parts In-Stock

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$1.566

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$2.208

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267

$1.566

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$2.208

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DigiPath Technology Company

USA . 1,377 parts In-Stock

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$1.725

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$1.587

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$1.725

$1.587

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IDEA Electronic Components Group

UK . 2,245 parts In-Stock

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$1.760

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$1.584

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2,245

$1.760

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$1.584

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ChromeModa Solutions

Germany . 388 parts In-Stock

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$1.760

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$1.443

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388

$1.760

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One Stop Electronics

USA . 619 parts In-Stock

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$15.050

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619

$15.050

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AZTECH Wire

Italy . 273 parts In-Stock

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$19.483

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Corohmni

South Africa . 428 parts In-Stock

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$70.000

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428

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Corphita

USA . 5,445 parts In-Stock

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SupplyDigital Components

Austria . 5,144 parts In-Stock

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TANS Electronics

Latvia . 3,744 parts In-Stock

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Problanco Electronics

Mexico . 3,109 parts In-Stock

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Kulean Microsystems

USA . 2,433 parts In-Stock

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UHIMA Technologies

Türkiye . 64 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the 2N489B by Texas Instruments, a powerhouse in the world of Unijunction Transistors. This versatile component is perfect for switching applications, offering a maximum emitter current of 70 mA and a rugged metal package body. With Texas Instruments' reputation for excellence backing it up, you can trust that this transistor will deliver exceptional performance every time. Whether you're designing electronics for industrial, automotive, or consumer applications, the 2N489B provides the value, efficiency, and precision you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and heat dissipation, making the transistor suitable for high temperature environments.

Configuration: SINGLE

Single configuration simplifies circuit design and assembly, making the transistor easy to use.

Transistor Application: SWITCHING

Designed for switching applications, making it ideal for controlling electrical circuits.

Maximum Emitter Current: 70 mA

High maximum emitter current allows for handling of larger loads, increasing versatility of the transistor.

Package Shape: ROUND

Round shape allows for efficient placement and soldering onto circuit boards, saving space and making assembly easier.

Terminal Form: WIRE

Wire terminals enable easy connection and disconnection during circuit design and testing.

Maximum Inter-base Voltage: 65 V

High maximum inter-base voltage tolerance ensures the transistor can handle voltage spikes without damage.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections, allowing for diverse applications.

Maximum Power Dissipation (Abs): 0.45 W

Low power dissipation helps in reducing heat generation and energy consumption, improving overall efficiency.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is compact and easy to mount, suitable for space-constrained designs.

Maximum Operating Temperature: 140 °C

High maximum operating temperature allows the transistor to be used in a wide range of industrial and automotive applications.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in switching applications.

Minimum Operating Temperature: -65 °C

Wide range of operating temperatures ensures the transistor can function in both extreme hot and cold environments.

Minimum Intrinsic Stand-off Ratio: 0.51

Higher minimum intrinsic stand-off ratio indicates better performance in preventing false triggering or voltage spikes.

Maximum Static Inter-Base Resistance: 6.8 kohm

Higher maximum resistance helps in preventing leakage current and improving signal quality.

Terminal Position: BOTTOM

Terminal position at the bottom makes it easy to integrate the transistor into the circuit layout.

Case Connection: ISOLATED

Isolated case connection improves safety by preventing short circuits and enhancing electrical insulation.

Maximum Intrinsic Stand-off Ratio: 0.62

Higher maximum intrinsic stand-off ratio indicates better performance in controlling current flow and preventing electrical breakdown.

Minimum Static Inter-Base Resistance: 4.7 kohm

Lower minimum resistance helps in reducing power losses and improving signal integrity in the circuit.

Minimum Valley Point Current: 8 mA

Minimum valley point current ensures the transistor switches off properly in between cycles, reducing power consumption and heat generation.

Maximum Peak Point Current: 6 mA

Maximum peak point current indicates the maximum current rating for reliable switching performance.

Technical Specifications

Unijunction Transistors (UFT) 2N489B attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.62

Minimum Intrinsic Stand-off Ratio:

.51

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

6 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

6.8 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N489B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-777-6536, 5961007776536, 5961-14-314-7908, 5961143147908

NIIN

007776536, 143147908

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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